Intersil HA2-5002/883 Monolithic, wideband, high slew rate, high output current buffer Datasheet

HA-5002/883
®
Data Sheet
January 5, 2006
Monolithic, Wideband, High Slew Rate,
High Output Current Buffer
The HA-5002/883 is a monolithic, wideband, high slew rate,
high output current, buffer amplifier.
Utilizing the advantages of the Intersil Dielectric Isolation
technologies, the HA-5002/883 current buffer offers
1300V/µs slew rate typically and 1000V/µs minimum with
110MHz of bandwidth. The ±100mA minimum output current
capability is enhanced by a 3Ω output impedance.
The monolithic HA-5002/883 will replace the hybrid LH0002
with corresponding performance increases. These
characteristics range from the 3MΩ (typ) input impedance to
the increased output voltage swing. Monolithic design
technologies have allowed a more precise buffer to be
developed with more than an order of magnitude smaller
gain error. The voltage gain is 0.98 guaranteed minimum
with a 1kΩ load and 0.96 minimum with a 100Ω load.
The HA-5002/883 will provide many present hybrid users
with a higher degree of reliability and at the same time
increase overall circuit performance.
• This Circuit is Processed in Accordance to MIL-STD-883
and is Fully Conformant Under the Provisions of
Paragraph 1.2.1.
• Voltage Gain (RL = 1kΩ) . . . . . . . . . . . . . . . . . . 0.98 (Min)
0.995 (Typ)
(RL = 100Ω) . . . . . . . . . . . . . . . . . 0.96 (Min)
0.971 (Typ)
• High Input Impedance . . . . . . . . . . . . . . . . . . 1.5MΩ (Min)
3MΩ (Typ)
• Low Output Impedance . . . . . . . . . . . . . . . . . . . 5Ω (Max)
3Ω (Typ)
• Very High Slew Rate . . . . . . . . . . . . . . . . .1000V/µs (Min)
1300V/µs (Typ)
• Wide Small Signal Bandwidth . . . . . . . . . . . 110MHz (Typ)
• High Output Current . . . . . . . . . . . . . . . . . . . .100mA (Min)
• High Pulsed Output Current . . . . . . . . . . . . . 400mA (Max)
• Monolithic Dielectric Isolation Construction
Applications
TEMP
RANGE
(°C)
PART
MARKING
Features
• Replaces Hybrid LH0002
Ordering Information
PART
NUMBER
FN3705.4
PACKAGE
• Line Driver
HA2-5002/883 HA2-5002/883 -55 to +125 8 Pin Can
• Data Acquisition
HA4-5002/883 HA4-5002/883 -55 to +125 20 Ld Ceramic LCC
• 110MHz Buffer
• High Power Current Booster
• High Power Current Source
• Sample and Holds
• Radar Cable Driver
• Video Products
Pinouts
IN
1 20 19
NC
4
18 NC
V2 -
5
17 V2 +
NC
6
16 NC
NC
7
15 NC
NC
8
14 NC
1
NC
V1 -
NC
IN
9 10 11 12 13
NC
HA-5002/883
(METAL CAN)
TOP VIEW
NC
2
NC
V1 +
3
OUT
NC
HA-5002/883 (CLCC)
TOP VIEW
8
V1+ 1
7
V2 + 2
NC
V1-
6
5
3
V2 -
NC
4
OUT
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2002, 2004-2006. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
HA-5002/883
Absolute Maximum Ratings
Thermal Information
Voltage Between V+ and V- Terminals. . . . . . . . . . . . . . . . . . . . .44V
Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Equal to Supplies
Peak Output Current (50ms On, 1s Off) . . . . . . . . . . . . . . . . . .±400mA
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .<4000V
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300°C
Thermal Resistance
θJA (°C/W)
θJC (°C/W)
Metal Can Package . . . . . . . . . . . . . . .
160
70
Ceramic LCC Package. . . . . . . . . . . . .
80
30
Package Power Dissipation Limit at +75°C for TJ ≤ +175°C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .625mW
Ceramic LCC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.25W
Package Power Dissipation Derating Factor Above +75°C
Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . .6.3mW/°C
Ceramic LCC Package. . . . . . . . . . . . . . . . . . . . . . . . .12.5mW/°C
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . .-55°C to +125°C
Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . ±12V to ±15V
RL ≥ 100Ω
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. θJA is measured with the component mounted on a low effective thermal conductivity test board in free air. See Tech Brief TB379
for details.
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50Ω, CLOAD ≤ 10pF, VIN = 0V, Unless Otherwise Specified.
PARAMETERS
Input Offset
Voltage
SYMBOL
CONDITIONS
VSUP = ±15V
VIO1
VSUP = ±12V
VIO2
Input Bias Current
VSUP = ±15V, RS = 1kΩ
IB1
VSUP = ±12V, RS = 1kΩ
IB2
Voltage Gain 1
VSUP = ±12V, RL = 1kΩ,
VIN = 10V
+AV1
VSUP = ±12V, RL = 1kΩ,
VIN = -10V
-AV1
Voltage Gain 2
Voltage Gain 3
Voltage Gain 4
GROUP A
SUBGROUPS
TEMPERATURE (°C)
MIN
MAX
UNITS
1
+25
-20
20
mV
2, 3
+125, -55
-30
30
mV
1
+25
-20
20
mV
2, 3
+125, -55
-30
30
mV
1
+25
-7
7
µA
2, 3
+125, -55
-10
10
µA
1
+25
-7
7
µA
2, 3
+125, -55
-10
10
µA
1
+25
0.98
-
V/V
2, 3
+125, -55
0.98
-
V/V
1
+25
0.98
-
V/V
2, 3
+125, -55
0.98
-
V/V
+AV2
VSUP = ±12V, RL = 100Ω,
VIN = 10V
1
+25
0.96
-
V/V
-AV2
VSUP = ±12V, RL = 100Ω,
VIN = -10V
1
+25
0.96
-
V/V
+AV3
VSUP = ±15V, RL = 100Ω,
VIN = 10V
1
+25
0.96
-
V/V
-AV3
VSUP = ±15V, RL = 100Ω,
VIN = -10V
1
+25
0.96
-
V/V
+AV4
VSUP = ±15V,
RL = 1kΩ,
VIN = +10V
1
+25
0.99
-
V/V
2, 3
+125, -55
0.99
-
V/V
1
+25
0.99
-
V/V
2, 3
+125, -55
0.99
-
V/V
VSUP = ±15V,
RL = 1kΩ,
VIN = -10V
-AV4
2
FN3705.4
January 5, 2006
HA-5002/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)
Device Tested at: VSUPPLY = ±12V and ±15V, RSOURCE = 50Ω, CLOAD ≤ 10pF, VIN = 0V, Unless Otherwise Specified.
PARAMETERS
Output Voltage
Swing
SYMBOL
CONDITIONS
VSUP = ±15V,
RL = 100Ω,
VIN = +15V
+VOUT1
VSUP = ±15V,
RL = 100Ω,
VIN = -15V
-VOUT1
VSUP = ±15V,
RL = 1kΩ,
VIN = +15V
+VOUT2
VSUP = ±15V,
RL = 1kΩ,
VIN = -15V
-VOUT2
VSUP = ±12V,
RL = 1kΩ,
VIN = +12V
+VOUT3
VSUP = ±12V,
RL = 1kΩ,
VIN = -12V
-VOUT3
Output Current
VSUP = ±15V,
VOUT = +10V
+IOUT1
VSUP = ±15V,
VOUT = -10V
-IOUT1
VSUP = ±12V,
VOUT = +10V
+IOUT2
VSUP = ±12V,
VOUT = -10V
-IOUT2
Power Supply
Rejection Ratio
∆VSUP = ±5V,
V+ = +20V, V- = -15V,
V+ = +10V, V- = -15V
+PSRR1
∆VSUP = ±5V,
V+ = +15V, V- = -20V,
V+ = +15V, V- = -10V
-PSRR1
∆VSUP = ±5V,
V+ = +17V, V- = -12V,
V+ = +7V, V- = -12V
+PSRR2
∆VSUP = ±5V,
V+ = +12V, V- = -17V,
V+ = +12V, V- = -7V
-PSRR2
Power Supply
Current
VSUP = ±15V,
VOUT = 0V
+ICC1
VSUP = ±15V,
VOUT = 0V
-ICC1
VSUP = ±12V,
VOUT = 0V
+ICC2
VSUP = ±12V,
VOUT = 0V
-ICC2
3
GROUP A
SUBGROUPS
TEMPERATURE (°C)
MIN
MAX
UNITS
1
+25
10
-
V
2, 3
+125, -55
10
-
V
1
+25
-
-10
V
2, 3
+125, -55
-
-10
V
1
+25
10
-
V
2, 3
+125, -55
10
-
V
1
+25
-
-10
V
2, 3
+125, -55
-
-10
V
1
+25
10
-
V
2, 3
+125, -55
10
-
V
1
+25
-
-10
V
2, 3
+125, -55
-
-10
V
1
+25
100
-
mA
2, 3
+125, -55
100
-
mA
1
+25
-
-100
mA
2, 3
+125, -55
-
-100
mA
1
+25
100
-
mA
2, 3
+125, -55
100
-
mA
1
+25
-
-100
mA
2, 3
+125, -55
-
-100
mA
1
+25
54
-
dB
2, 3
+125, -55
54
-
dB
1
+25
54
-
dB
2, 3
+125, -55
54
-
dB
1
+25
54
-
dB
2, 3
+125, -55
54
-
dB
1
+25
54
-
dB
2, 3
+125, -55
54
-
dB
1
+25
-
10
mA
2, 3
+125, -55
-
10
mA
1
+25
-10
-
mA
2, 3
+125, -55
-10
-
mA
1
+25
-
10
mA
2, 3
+125, -55
-
10
mA
1
+25
-10
-
mA
2, 3
+125, -55
-10
-
mA
FN3705.4
January 5, 2006
HA-5002/883
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank. See AC Specifications in Table 3
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Device Characterized at: VSUPPLY = ±15V or ±12V, RLOAD = 1kΩ, CLOAD ≤ 10pF, Unless Otherwise Specified.
PARAMETERS
SYMBOL
Input Resistance
Slew Rate
MAX
UNITS
+25
1.5
-
MΩ
RIN2
VSUP = ±12V
1
+25
1.5
-
MΩ
+SR1
VSUP = ±15V,
VOUT = -5V to +5V
1
+25
1000
-
V/µs
+125, -55
1000
-
V/µs
VSUP = ±15V,
VOUT = +5V to -5V
1
VSUP = ±12V,
VOUT = -5V to +5V
1
VSUP = ±12V,
VOUT = +5V to -5V
1
+25
1000
-
V/µs
+125, -55
1000
-
V/µs
+25
1000
-
V/µs
+125, -55
1000
-
V/µs
+25
1000
-
V/µs
+125, -55
1000
-
V/µs
VSUP = ±15V or ±12V,
VOUT = 0 to +500mV
1, 2
+25
-
10
ns
1, 2
+125, -55
-
10
ns
VSUP = ±15V or ±12V,
VOUT = 0 to -500mV
1, 2
+25
-
10
ns
1, 2
+125, -55
-
10
ns
VSUP = ±12V or ±15V,
VOUT = 0 to +500mV
1
+25
-
30
%
+125, -55
-
30
%
-OS
VSUP = ±12V or ±15V,
VOUT = 0 to -500mV
1
+25
-
30
%
+125, -55
-
30
%
PC1
VSUP = ±15V,
VIN = 0V,
IOUT = 0mA
1, 3
+25
-
300
mW
+125, -55
-
300
mW
VSUP = ±12V,
VIN = 0V,
IOUT = 0mA
1, 3
+25
-
240
mW
+125, -55
-
240
mW
ROUT1
VSUP = ±12V
1
+25
-
5
Ω
ROUT2
VSUP = ±12V
1
+25
-
5
Ω
TR
TF
+OS
PC2
Output Resistance
MIN
1
-SR2
Quiescent Power
Consumption
TEMPERATURE
(°C)
VSUP = ±15V
+SR2
Overshoot
NOTES
RIN1
-SR1
Rise and Fall Time
CONDITIONS
NOTES:
1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters
are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon
data from multiple production runs which reflect lot to lot and within lot variation.
2. Measured between 10% and 90% points.
3. Quiescent Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)
TABLE 4. ELECTRICAL TEST REQUIREMENTS
MIL-STD-883 TEST REQUIREMENTS
Interim Electrical Parameters (Pre Burn-In)
Final Electrical Test Parameters
SUBGROUPS (SEE TABLE 1)
1
1 (Note 1), 2, 3
Group A Test Requirements
1, 2, 3
Groups C and D Endpoints
1
NOTE:
1. PDA applies to Subgroup 1 only.
4
FN3705.4
January 5, 2006
HA-5002/883
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP): V1TRANSISTOR COUNT: 27
PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5002/883
IN
V1-
V1- (ALT)
V1+ (ALT)
V2+
V2-
V1+
OUT
5
FN3705.4
January 5, 2006
HA-5002/883
Ceramic Leadless Chip Carrier Packages (CLCC)
J20.A
MIL-STD-1835 CQCC1-N20 (C-2)
20 PAD CERAMIC LEADLESS CHIP CARRIER PACKAGE
0.010 S E H S
D
INCHES
D3
SYMBOL
j x 45o
E3
B
E
h x 45o
0.010 S E F S
A
PLANE 2
PLANE 1
-E-
e
-H-
L3
NOTES
0.060
0.100
1.52
2.54
6, 7
0.088
1.27
2.23
-
B
-
-
-
-
-
B1
0.022
0.028
0.56
0.71
2, 4
B2
0.072 REF
1.83 REF
-
B3
0.006
0.022
0.15
0.56
-
D
0.342
0.358
8.69
9.09
-
D1
0.200 BSC
5.08 BSC
D2
0.100 BSC
2.54 BSC
D3
-
0.358
-
E
0.342
0.358
8.69
0.200 BSC
E2
0.100 BSC
E3
-
e
j
L
MAX
0.050
h
B1
MIN
A
e1
0.007 M E F S H S
MILLIMETERS
MAX
A1
E1
A1
MIN
0.358
0.050 BSC
0.015
-
0.040 REF
0.020 REF
-
9.09
2
9.09
-
5.08 BSC
-
2.54 BSC
-
-
9.09
2
1.27 BSC
0.38
-
2
1.02 REF
5
0.51 REF
5
L
0.045
0.055
1.14
1.40
-
L1
0.045
0.055
1.14
1.40
-
L2
0.075
0.095
1.91
2.41
-
L3
0.003
0.015
0.08
0.38
-
ND
5
5
NE
5
5
3
3
N
20
20
3
Rev. 0 5/18/94
-F-
NOTES:
B3
E1
E2
L2
B2
L1
D2
e1
D1
1. Metallized castellations shall be connected to plane 1 terminals
and extend toward plane 2 across at least two layers of ceramic
or completely across all of the ceramic layers to make electrical
connection with the optional plane 2 terminals.
2. Unless otherwise specified, a minimum clearance of 0.015 inch
(0.38mm) shall be maintained between all metallized features
(e.g., lid, castellations, terminals, thermal pads, etc.)
3. Symbol “N” is the maximum number of terminals. Symbols “ND”
and “NE” are the number of terminals along the sides of length
“D” and “E”, respectively.
4. The required plane 1 terminals and optional plane 2 terminals (if
used) shall be electrically connected.
5. The corner shape (square, notch, radius, etc.) may vary at the
manufacturer’s option, from that shown on the drawing.
6. Chip carriers shall be constructed of a minimum of two ceramic
layers.
7. Dimension “A” controls the overall package thickness. The maximum “A” dimension is package height before being solder dipped.
8. Dimensioning and tolerancing per ANSI Y14.5M-1982.
9. Controlling dimension: INCH.
6
FN3705.4
January 5, 2006
HA-5002/883
Metal Can Packages (Can)
T8.C MIL-STD-1835 MACY1-X8 (A1)
REFERENCE PLANE
A
8 LEAD METAL CAN PACKAGE
e1
L
L2
L1
INCHES
SYMBOL
ØD2
0.185
4.19
4.70
-
0.019
0.41
0.48
1
Øb1
0.016
0.021
0.41
0.53
1
N
Øb2
0.016
0.024
0.41
0.61
-
ØD
0.335
0.375
8.51
9.40
-
α
ØD1
0.305
0.335
7.75
8.51
-
ØD2
0.110
0.160
2.79
4.06
-
1
β
Øb
k
C
L
e
BASE AND
SEATING PLANE
Q
BASE METAL
Øb1
NOTES
0.165
k1
Øb1
MAX
0.016
Øe
F
MIN
A
A
2
MILLIMETERS
MAX
Øb
A
ØD ØD1
MIN
LEAD FINISH
Øb2
SECTION A-A
NOTES:
1. (All leads) Øb applies between L1 and L2. Øb1 applies between
L2 and 0.500 from the reference plane. Diameter is uncontrolled
in L1 and beyond 0.500 from the reference plane.
e1
0.200 BSC
5.08 BSC
0.100 BSC
-
2.54 BSC
-
F
-
0.040
-
1.02
-
k
0.027
0.034
0.69
0.86
-
k1
0.027
0.045
0.69
1.14
2
12.70
19.05
1
1.27
1
L
0.500
0.750
L1
-
0.050
L2
0.250
-
6.35
-
1
Q
0.010
0.045
0.25
1.14
-
α
-
β
45o BSC
45o BSC
45o BSC
45o BSC
N
8
8
2. Measured from maximum diameter of the product.
3. α is the basic spacing from the centerline of the tab to terminal 1
and β is the basic spacing of each lead or lead position (N -1
places) from α, looking at the bottom of the package.
3
3
4
Rev. 0 5/18/94
4. N is the maximum number of terminal positions.
5. Dimensioning and tolerancing per ANSI Y14.5M - 1982.
6. Controlling dimension: INCH.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
7
FN3705.4
January 5, 2006
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