Mitsubishi MGFC40V5258 5.2 - 5.8ghz band 10w internally matched gaas fet Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC40V5258
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
DESCRIPTION
OUTLINE DRAWING
Unit: millimeters
24+/-0.3
R1.25
(1)
0.6+/-0.15
2MIN
The MGFC40V5258 is an internally impedance-matched
GaAs power FET especially designed for use in 5.2 - 5.8
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 10W (TYP.) @ f=5.2 - 5.8 GHz
High power gain
GLP = 10 dB (TYP.) @ f=5.2 - 5.8GHz
High power added efficiency
P.A.E. = 32 % (TYP.) @ f=5.2 - 5.8GHz
15.8
8.0+/-0.2
(2)
2MIN
17.4+/-0.3
R1.2
(3)
20.4+/-0.2
item 01 : 5.2 - 5.8 GHz band power amplifier
13.4
4.0+/-0.4
0.1
item 51 : 5.2 - 5.8 GHz band digital radio communication
QUALITY GRADE
1.4
IG
2.4+/-0.2
APPLICATION
RECOMMENDED BIAS CONDITIONS
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
GF-18
VDS = 10 (V)
ID = 2.4 (A)
RG=50 (ohm)
ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
Ratings
Unit
VGDO
making semiconductor products better and more reliable,
Gate to drain voltage
-15
V
VGSO
but there is always the possibility that trouble may occur
Gate to source voltage
-15
V
with them. Trouble with semiconductors may lead to personal
Drain current
7.5
A
injury, fire or property damage. Remember to give due
IGR
Reverse gate current
-20
mA
consideration to safety when making your circuit designs,
IGF
Forward gate current
42
mA
with appropriate measures such as (1)placement of
PT
Total power dissipation
42.8
W
Tch
Channel temperature
175
deg.C
Tstg
Storage temperature
-65 / +175
deg.C
ID
*1
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
*1 : Tc=25deg.C
ELECTRICAL CHARACTERISTICS
Symbol
IDSS
gm
VGS(off)
P1dB
GLP
ID
P.A.E.
Rth(ch-c)
Parameter
(Ta=25deg.C)
Test conditions
Limits
Typ.
4.5
Max.
6
Unit
A
Saturated drain current
VDS = 3V , VGS = 0V
Min.
-
Transconductance
VDS = 3V , ID = 2.2A
-
2
-
S
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
VDS = 3V , ID = 40mA
-2
-3
-4
V
39.5
40.5
-
dBm
dB
8
10
-
Drain current
-
2.4
-
A
Power added efficiency
-
32
-
%
-
-
3.5
deg.C/W
Thermal resistance
*1
VDS=10V, ID(RF off)=2.4A, f=5.2 - 5.8GHz
delta Vf method
*1 : Channel-case
MITSUBISHI
ELECTRIC
June/2004
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC40V5258
5.2 - 5.8GHz BAND 10W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
June/2004
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