MOSFET SMD Type P-Channel MOSFET AO3415A (KO3415A) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features ● RDS(ON) ＜ 43mΩ (VGS =-4.5V) 1 ● RDS(ON) ＜ 55mΩ (VGS =-2.5V) 0.55 ● ID =-5 A (VGS =-4.5V) +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● VDS (V) =-20V 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.05 0.1 -0.01 +0.1 0.97 -0.1 ● RDS(ON) ＜ 75mΩ (VGS =-1.8V) 0-0.1 D +0.1 0.38 -0.1 ● RDS(ON) ＜ 100mΩ (VGS =-1.5V) 1. Gate 2. Source 3. Drain G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±8 Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead ID IDM TA=25°C TA=70°C t ≤ 10s Steady-State PD RthJA Unit V -5 -4 A -30 1.5 1 W 80 100 RthJL 52 Junction Temperature TJ 150 Junction Storage Temperature Range Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type P-Channel MOSFET AO3415A (KO3415A) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body leakage current IGSS Gate Threshold Voltage Static Drain-Source On-Resistance VGS(th) RDS(On) Test Conditions Min Typ -20 ID=-250μA, VGS=0V VDS=-20V, VGS=0V -1 VDS=-20V, VGS=0V, TJ=55℃ -5 VDS=0V, VGS=±8V -0.3 VDS=VGS ID=-250μA Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate resistance Rg Total Gate Charge Qg Gate Source Charge Qgs Gate Drain Charge Qgd Turn-On DelayTime td(on) Turn-On Rise Time tr Turn-Off DelayTime td(off) Turn-Off Fall Time tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS Diode Forward Voltage VSD Marking 2 XF** www.kexin.com.cn -0.9 V 43 VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-4A 55 VGS=-1.8V, ID=-2A 75 VDS=-5V, ID=-4 A VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-4.5V, VDS=-10V, ID=-4A mΩ 100 -30 A 20 S 600 905 80 150 48 115 6 20 7.4 11 0.8 1.2 1.3 pF Ω nC 3.1 13 9 VGS=-4.5V, VDS=-10V, RL=2.5Ω, RGEN=3Ω ns 19 29 IF=-4A, dI/dt=100A/μs 20 32 40 62 nC -2 A -1 V IS=-1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking uA 59 TJ=125℃ uA ±10 VGS=-4.5V, ID=-4A VGS=-4.5V, VDS=-5V Unit V VGS=-1.5V, ID=-1A On state drain current Max MOSFET SMD Type P-Channel MOSFET AO3415A (KO3415A) ■ Typical Characterisitics 40 -8V 35 15 -4.5V 30 12 -2.5V 25 9 -ID(A) -ID (A) VDS=-5V -3.0V 20 -2.0V 15 10 3 5 125°C 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 0 5 100 0.5 1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) Normalized On-Resistance 1.60 VGS=-1.5V 80 60 VGS=-1.8V 40 VGS=-2.5V VGS=-4.5V 2 ID=-4A, VGS=-4.5V 1.40 ID=-4A, VGS=-2.5V 1.20 ID=-2A, VGS=-1.8V 1.00 0.80 20 0 2 4 6 8 0 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 120 ID=-4A 1.0E+00 100 1.0E-01 80 -IS (A) RDS(ON) (mΩ Ω) 25°C VGS=-1.5V 0 RDS(ON) (mΩ Ω) 6 60 125°C 40 125°C 25°C 1.0E-02 1.0E-03 1.0E-04 25°C 20 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.kexin.com.cn 3 MOSFET SMD Type P-Channel MOSFET AO3415A (KO3415A) ■ Typical Characterisitics 1400 5 VDS=-10V ID=-4A 1200 Capacitance (pF) 4 -VGS (Volts) 3 2 1000 600 400 1 Crss 0 0 2 4 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 0 12 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 1ms 1.0 10ms DC 0.1 Power (W) 10µs 10.0 100ms 0.01 10 1 0.1 100 10 10s TJ(Max)=150°C TA=25°C 1 0.0 1 10 -VDS (Volts) . Figure 9: Maximum Forward Biased Safe Operating Area (Note F) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=100°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4 20 1000 100.0 -ID (Amps) Coss 200 0 Zθ JA Normalized Transient Thermal Resistance Ciss 800 www.kexin.com.cn 100 1000