Vishay DG2003 Low-voltage dual spst analog switch Datasheet

DG2003/2004/2005
New Product
Vishay Siliconix
Low-Voltage Dual SPST Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Low Voltage Operation (1.8 V to 5.5 V)
Low On-Resistance - rDS(on): 1.2 W
Fast Switching - 14 ns
Low Charge Injection - QINJ: 1 pC
Low Power Consumption
TTL/CMOS Compatible
MSOP-8 Package
Reduced Power Consumption
Simple Logic Interface
High Accuracy
Reduce Board Space
Cellular Phones
Communication Systems
Portable Test Equipment
Battery Operated Systems
Sample and Hold Circuits
DESCRIPTION
The DG2003/2004/2005 are built on Vishay Siliconix’s low
voltage JI2 process. An epitaxial layer prevents latchup.
The DG2003/2004/2005 are dual single-pole/single-throw
monolithic CMOS analog switch designed for high
performance switching of analog signals. Combining low
power, fast switching, low on-resistance (rDS(on): 1.2 W) and
small physical size (MSOP-8), the DG2003/2004/2005 are
ideal for portable and battery powered applications requiring
high performance and efficient use of board space.
Each switch conducts equally well in both directions when on,
and blocks up to the power supply level when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2003
DG2004
DG2005
NO1
1
8
V+
NC1
1
8
V+
NO1
1
8
V+
COM1
2
7
IN1
COM1
2
7
IN1
COM1
2
7
IN1
IN2
3
6
COM2
IN2
3
6
COM2
IN2
3
6
COM2
GND
4
5
NO2
GND
4
5
NC2
GND
4
5
NC2
Top View
Top View
TRUTH TABLE - DG2003
Top View
TRUTH TABLE - DG2004
TRUTH TABLE - DG2005
Logic
NO
Logic
NC
Logic
NO1
NC2
0
Off
0
On
0
Off
On
1
On
1
Off
1
On
Off
ORDERING INFORMATION
Temp Range
Package
-40 to 85°C
MSOP-8
Part Number
DG2003DQ
DG2004DQ
DG2005DQ
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
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1
DG2003/2004/2005
New Product
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NOa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)b
MSOP-8c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by
internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6.5 mW/_C above 25_C
SPECIFICATIONS (V+ = 2.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 2.0 V, "10%, VIN = 0.4 or 1.6 Ve
Limits
–40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatnessd
Switch Off Leakage
Currentf
VNO, VNC,
VCOM
rON
V+ = 2.0 V, VCOM = 1.0 V, INO, INC = 1 mA
Room
Fulld
7.0
12.5
rON
Flatness
V+ = 2.0 V, VCOM = 0 to V+, INO, INC = 1 mA
Room
5
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current f
ICOM(on)
10.0
16.0
W
V+ = 2.2 V
VNO, VNC = 0.5 V/1.5 V, VCOM = 1.5 V/0.5 V
V+ = 2.2 V, VNO, VNC = VCOM = 0.5 V/1.5 V
Room
Fulld
–500
–4.0
500
4.0
pA
nA
Room
Fulld
–500
–4.0
500
4.0
pA
nA
Room
Fulld
–500
–4.0
500
4.0
pA
nA
1.6
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitanced
Input Current
Full
Cin
IINL or IINH
0.4
VIN = 0 or V+
Full
5
–1
V
pF
1
mA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitanced
CNO(off),
CNC(off)
VNO or VNC = 1.5 V, RL = 300 W, CL = 35 pF
Figures 1 and 2
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W
W, CL = 5 pF, f = 1 MHz
Room
Fulld
30
47
48
Room
Fulld
22
37
48
Room
2
Room
–61
Room
–67
Room
53
Room
110
pC
dB
VIN = 0 or V+, f = 1 MHz
CON
ns
pF
Power Supply
Power Supply Range
V+
Power Supply Currentd
I+
Power Consumption
PC
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2
1.8
0.02
VIN = 0 or V+
2.2
V
1.0
mA
2.2
mW
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
DG2003/2004/2005
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 3.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 3 V, "10%, VIN = 0.4 or 2.0 Ve
Limits
–40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatnessd
Switch Off Leakage Current f
VNO, VNC,
VCOM
rON
V+ = 2.7 V, VCOM = 1.5 V, INO, INC = 10 mA
Room
Full
2.2
2.4
rON
Flatness
V+ = 2.7 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
0.5
INO(off),
INC(off)
ICOM(off)
Channel-On Leakage Current f
ICOM(on)
3.5
3.7
W
V+ = 3.3 V
VNO, VNC = 1 V/3 V, VCOM = 3 V/1 V
V+ = 3.3 V, VNO, VNC = VCOM = 1 V/3 V
Room
Full
–500
–6.0
500
6.0
pA
nA
Room
Full
–500
–6.0
500
6.0
pA
nA
Room
Full
–500
–6.0
500
6.0
pA
nA
2
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Cin
Full
Input Capacitanced
Input Current
IINL or IINH
VIN = 0 or V+
Full
0.4
5
–1
V
pF
1
mA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
NO, NC Off Capacitanced
Channel-On Capacitanced
CNO(off),
CNC(off)
VNO or VNC = 2.0 V, RL = 300 W, CL = 35 pF
Figure 1 and 2
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W
W, CL = 5 pF, f = 1 MHz
Room
Full
19
35
36
Room
Full
17
31
34
Room
1
Room
–61
Room
–67
Room
53
Room
110
pC
dB
VIN = 0 or V+, f = 1 MHz
CON
ns
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
2.7
0.02
VIN = 0 or V+
3.3
V
1.0
mA
3.3
mW
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DG2003/2004/2005
New Product
Vishay Siliconix
SPECIFICATIONS (V+ = 5.0 V)
Test Conditions
Otherwise Unless Specified
Parameter
Symbol
V+ = 5 V, "10%, VIN = 0.8 or 2.4 Ve
Limits
–40 to 85_C
Tempa
Minb
Full
0
Typc
Maxb
Unit
V+
V
Analog Switch
Analog Signal Ranged
On-Resistance
rON Flatnessd
VNO, VNC,
VCOM
rON
V+ = 4.5 V, VCOM = 3 V, INO, INC = 10 mA
Room
Full
1.2
1.6
rON
Flatness
V+ = 4.5 V, VCOM = 0 to V+, INO, INC = 10 mA
Room
0.2
INO(off),
INC(off)
Switch Off Leakage Current
ICOM(off)
Channel-On Leakage Current
ICOM(on)
2.5
2.7
W
V+ = 5.5 V
VNO, VNC = 1 V/4.5 V, VCOM = 4.5 V/1 V
V+ = 5.5 V, V+ = 5.5 V
VNO, VNC = VCOM = 1 V/4.5 V
Room
Full
–1.0
–8.0
1.0
8.0
Room
Full
–1.0
–8.0
1.0
8.0
Room
Full
–1.0
–8.0
1.0
8.0
2.4
nA
Digital Control
Input High Voltage
VINH
Full
Input Low Voltage
VINL
Full
Input Capacitance
Cin
Full
Input Current
IINL or IINH
VIN = 0 or V+
Full
0.8
5
–1
V
pF
1
mA
Dynamic Characteristics
Turn-On Timed
tON
Turn-Off Timed
tOFF
Charge Injectiond
QINJ
Off-Isolationd
OIRR
Crosstalkd
XTALK
Source-Off Capacitanced
Channel-On Capacitanced
CNO(off),
CNC(off)
VNO or VNC = 3 V, RL = 300 W, CL = 35 pF
Figure 1 and 2
CL = 1 nF, VGEN = 0 V, RGEN = 0 W, Figure 3
RL = 50 W
W, CL = 5 pF, f = 1 MHz
Room
Full
13
28
31
Room
Full
19
22
31
Room
1
Room
–61
Room
–67
Room
51
Room
110
pC
dB
VIN = 0 or V+, f = 1 MHz
CON
ns
pF
Power Supply
Power Supply Range
V+
Power Supply Current
I+
Power Consumption
PC
4.5
0.02
VIN = 0 or V+
5.5
V
1.0
mA
5.5
mW
Notes:
a.
b.
c.
d.
e.
f.
Room = 25°C, Full = as determined by the operating suffix.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Typical values are for design aid only, not guaranteed nor subject to production testing.
Guarantee by design, nor subjected to production test.
VIN = input voltage to perform proper function.
Guaranteed by 5-V leakage testing, not production tested.
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Document Number: 71754
S-05298—Rev. B, 17-Dec-01
DG2003/2004/2005
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rON vs. VCOM Supply Voltage
rON vs. Analog Voltage and Temperature
8
4.0
3.5
V+ = 2 V/IS = 1 mA
r ON – On-Resistance ( W )
r ON – On-Resistance ( W )
7
6
5
4
3
V+ = 3 V/IS = 100 mA
2
1
3.0
2.5
V+ = 3 V
–40_C
2.0
0_C
25_C
1.5
1.0
85_C
0.5
V+ = 5 V/IS = 100 mA
0
0.0
0
1
2
3
4
5
0
1
2
VCOM – Analog Voltage (V)
4
5
VCOM – Analog Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Switching Frequency
10 m
10
V+ = 5 V
VIN = 0 V
1m
I+ – Supply Current (A)
I+ – Supply Current (nA)
3
1
0.1
100 m
10 m
1m
100 n
10 n
0.01
–60
1n
–40
–20
0
20
40
60
80
10
100
Leakage Current vs. Temperature
10 K
100 K
1M
10 M
Leakage vs. Analog Voltage
V+ = 5 V
V+ = 5 V
T = 25_C
150
1000
100
Leakage Current (pA)
Leakage Current (pA)
1K
200
10000
ICOM(on)
100
INO(off)/INC(off)
10
50
ICOM(on)
0
ICOM(off)
–50
INO(off)/INC(off)
–100
–150
ICOM(off)
1
–60
100
Input Switching Frequency (Hz)
Temperature (_C)
–200
–40
–20
0
20
40
Temperature (_C)
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
60
80
100
0
1
2
3
4
5
VCOM, VNO, VNC – Analog Voltage
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DG2003/2004/2005
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Temperature and Supply Voltage
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
35
10
LOSS
0
30
25
Loss, OIRR, XTALK (dB)
t OFF – Switching Time (ns)
tON V+ = 2 V
tOFF V+ = 2 V
20
tON V+ = 3 V
15
tON V+ = 5 V
tOFF V+ = 3 V
tOFF V+ = 5 V
t ON,
10
–10
–20
–30
–40
–50
OIRR
–60
V+ = 3 V
RL = 50 W
–70
XTALK
5
–80
0
–60
–40
–20
0
20
40
60
80
–90
100 K
100
1M
Switching Threshold vs. Supply Voltage
1G
20
1.8
V+ = 5 V
15
1.6
Q – Charge Injection (pC)
V T – Switching Threshold (V)
100 M
Charge Injection vs. Analog Voltage
2.0
1.4
1.2
1.0
0.8
0.6
V+ = 3 V
10
V+ = 2 V
5
0
–5
–10
0.4
–15
0.2
0.0
–20
0
1
2
3
4
V+ – Supply Voltage (V)
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6
10 M
Frequency (Hz)
Temperature (_C)
5
6
0
1
2
3
4
5
6
VCOM – Analog Voltage (v)
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
DG2003/2004/2005
New Product
Vishay Siliconix
TEST CIRCUITS
V+
VINH
Logic
Input
50%
VINL
V+
Switch Output
COM
NO or NC
Switch
Input
tr t 5 ns
tf t 5 ns
VOUT
0.9 x VOUT
Switch
Output
IN
Logic
Input
RL
300 W
GND
CL
35 pF
0V
tOFF
tON
Logic “1” = Switch On
Logic input waveforms inverted for switches that have
the opposite logic sense.
CL (includes fixture and stray capacitance)
V OUT + V COM
ǒ
RL
R L ) R ON
Ǔ
FIGURE 1. Switching Time
V+
DVOUT
V+
Rgen
COM
VOUT
NC or NO
VOUT
+
IN
Vgen
IN
CL = 1 nF
On
Off
On
GND
Q = DVOUT x CL
VIN = 0 – V+
IN depends on switch configuration: input polarity
determined by sense of switch.
FIGURE 2. Charge Injection
V+
V+
10 nF
10 nF
V+
V+
NC or NO
COM
IN
0V, 2.4 V
Meter
IN
0 V, 2.4 V
COM
NC or NO
RL
GND
GND
HP4192A
Impedance
Analyzer
or Equivalent
f = 1 MHz
V COM
Analyzer
Off Isolation + 20 log V
NOńNC
FIGURE 3. Off-Isolation
Document Number: 71754
S-05298—Rev. B, 17-Dec-01
FIGURE 4. Channel Off/On Capacitance
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