Vishay BZX84C8V2-V Small signal zener diode Datasheet

BZX84-V-Series
www.vishay.com
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES
• These diodes are also available in other case
styles and other configurations including: the
SOD-123 case with type designation BZT52
series, the zener diode common anode
configuration in the SOT-23 case with type
designation AZ23 series and the zener diode
common cathode configuration in the SOT-23 case with
type designation DZ23 series
3
2
1
20421
• The Zener voltages are graded according to the
international E 24 standard. Standard zener voltage
tolerance is ± 5 %. Replace “C” with “B” for 2 % tolerance.
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
UNIT
VZ range nom.
2.4 to 75
V
Test current IZT
2; 5
mA
VZ specification
Pulse current
Int. construction
Single
• Silicon planar power Zener diodes
• AEC-Q101 qualified
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TAPED UNITS PER REEL
MINIMUM ORDER QUANTITY
BZX84-V-series
BZX84-V-series-GS18
10 000 (8 mm tape on 13" reel)
10 000
BZX84-V-series
BZX84-V-series-GS08
3000 (8 mm tape on 7" reel)
15 000
PACKAGE
PACKAGE NAME
SOT-23
MOLDING COMPOUND MOISTURE SENSITIVITY
FLAMMABILITY RATING
LEVEL
WEIGHT
8.8 mg
UL 94 V-0
MSL level 1
(according J-STD-020)
SOLDERING
CONDITIONS
260 °C/10 s at terminals
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Power dissipation
Tamb = 25 °C,
device on fiberglass substrate,
acc. layout on page 7
Ptot
300
mW
Thermal resistance junction to ambient air
Tamb = 25 °C,
device on fiberglass substrate,
acc. layout on page 7
RthJA
420
K/W
Tj
150
°C
Tstg
- 65 to + 150
°C
Junction temperature
Storage temperature range
Rev. 1.9, 08-Dec-11
Document Number: 85763
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-V-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART
NUMBER
MARKING
CODE
VZ at IZT1
TEST CURRENT
IZT1
V
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
f = 1 kHz
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1 ZZK at IZT2
DVZ at IZT1
:
10-4/°C
IZT2
mA
µA
V
MIN.
NOM.
MAX.
MAX.
MAX.
MIN.
MAX.
BZX84C2V4-V
Z11
2.2
2.4
2.6
5
1
50
1
100
275
-9
-4
BZX84C2V7-V
Z12
2.5
2.7
2.9
5
1
20
1
100
600
-9
-4
BZX84C3V0-V
Z13
2.8
3.0
3.2
5
1
10
1
95
600
-9
-3
BZX84C3V3-V
Z14
3.1
3.3
3.5
5
1
5
1
95
600
-8
-3
BZX84C3V6-V
Z15
3.4
3.6
3.8
5
1
5
1
90
600
-8
-3
BZX84C3V9-V
Z16
3.7
3.9
4.1
5
1
3
1
90
600
-7
-3
BZX84C4V3-V
Z17
4.0
4.3
4.6
5
1
3
1
90
600
-6
-1
BZX84C4V7-V
Z1
4.4
4.7
5.0
5
1
3
2
80
500
-5
2
BZX84C5V1-V
Z2
4.8
5.1
5.4
5
1
2
2
60
480
-3
4
BZX84C5V6-V
Z3
5.2
5.6
6.0
5
1
1
2
40
400
-2
6
BZX84C6V2-V
Z4
5.8
6.2
6.6
5
1
3
4
10
150
-1
7
BZX84C6V8-V
Z5
6.4
6.8
7.2
5
1
2
4
15
80
2
7
BZX84C7V5-V
Z6
7.0
7.5
7.9
5
1
1
5
15
80
3
7
BZX84C8V2-V
Z7
7.7
8.2
8.7
5
1
0.7
5
15
80
4
7
BZX84C9V1-V
Z8
8.5
9.1
9.6
5
1
0.5
6
15
100
5
8
BZX84C10-V
Z9
9.4
10
10.6
5
1
0.2
7
20
150
5
8
BZX84C11-V
Y1
10.4
11
11.6
5
1
0.1
8
20
150
5
9
BZX84C12-V
Y2
11.4
12
12.7
5
1
0.1
8
25
150
6
9
BZX84C13-V
Y3
12.4
13
14.1
5
1
0.1
8
30
170
7
9
BZX84C15-V
Y4
13.8
15
15.6
5
1
0.05
10.5
30
200
7
9
BZX84C16-V
Y5
15.3
16
17.1
5
1
0.05
11.2
40
200
8
9.5
BZX84C18-V
Y6
16.8
18
19.1
5
1
0.05
12.6
45
225
8
9.5
BZX84C20-V
Y7
18.8
20
21.2
5
1
0.05
14.0
55
225
8
10
BZX84C22-V
Y8
20.8
22
23.3
5
1
0.05
15.4
55
250
8
10
BZX84C24-V
Y9
22.8
24
25.6
5
1
0.05
16.8
70
250
8
10
BZX84C27-V
Y10
25.1
27
28.9
2
0.5
0.05
18.9
80
300
8
10
BZX84C30-V
Y11
28
30
32
2
0.5
0.05
21.0
80
300
8
10
BZX84C33-V
Y12
31
33
35
2
0.5
0.05
23.1
80
325
8
10
BZX84C36-V
Y13
34
36
38
2
0.5
0.05
25.2
90
350
8
10
BZX84C39-V
Y14
37
39
41
2
0.5
0.05
27.3
130
350
10
12
BZX84C43-V
Y15
40
43
46
2
0.5
0.05
30.1
150
375
10
12
BZX84C47-V
Y16
44
47
50
2
0.5
0.05
32.9
170
375
10
12
BZX84C51-V
Y17
48
51
54
2
0.5
0.05
35.7
180
400
10
12
BZX84C56-V
Y18
52
56
60
2
0.5
0.05
39.2
200
425
9
11
BZX84C62-V
Y19
58
62
66
2
0.5
0.05
43.4
215
450
9
12
BZX84C68-V
Y20
64
68
72
2
0.5
0.05
47.6
240
475
10
12
BZX84C75-V
Y21
70
75
79
2
0.5
0.05
52.5
255
500
10
12
Rev. 1.9, 08-Dec-11
Document Number: 85763
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-V-Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
ZENER VOLTAGE
RANGE
PART
NUMBER
MARKING
CODE
VZ at IZT1
TEST CURRENT
IZT1
V
REVERSE
LEAKAGE
CURRENT
DYNAMIC
RESISTANCE
f = 1 kHz
TEMPERATURE
COEFFICIENT
IR at VR
ZZ at IZT1 ZZK at IZT2
DVZ at IZT1
:
10-4/°C
IZT2
mA
µA
V
MIN.
NOM.
MAX.
MAX.
MAX.
MIN.
MAX.
BZX84B2V4-V
Z50
2.35
2.4
2.45
5
1
50
1
100
275
-9
-4
BZX84B2V7-V
Z51
2.65
2.7
2.75
5
1
20
1
100
600
-9
-4
BZX84B3V0-V
Z52
2.94
3.0
3.06
5
1
10
1
95
600
-9
-3
BZX84B3V3-V
Z53
3.23
3.3
3.37
5
1
5
1
95
600
-8
-3
BZX84B3V6-V
Z54
3.53
3.6
3.67
5
1
5
1
90
600
-8
-3
BZX84B3V9-V
Z55
3.82
3.9
3.98
5
1
3
1
90
600
-7
-3
BZX84B4V3-V
Z56
4.21
4.3
4.39
5
1
3
1
90
600
-6
-1
BZX84B4V7-V
Z57
4.61
4.7
4.79
5
1
3
2
80
500
-5
2
BZX84B5V1-V
Z58
5.0
5.1
5.2
5
1
2
2
60
480
-3
4
BZX84B5V6-V
Z59
5.49
5.6
5.71
5
1
1
2
40
400
-2
6
BZX84B6V2-V
Z60
6.08
6.2
6.32
5
1
3
4
10
150
-1
7
BZX84B6V8-V
Z61
6.66
6.8
6.94
5
1
2
4
15
80
2
7
BZX84B7V5-V
Z62
7.35
7.5
7.65
5
1
1
5
15
80
3
7
BZX84B8V2-V
Z63
8.04
8.2
8.36
5
1
0.7
5
15
80
4
7
BZX84B9V1-V
Z64
8.92
9.1
9.28
5
1
0.5
6
15
100
5
8
BZX84B10-V
Z65
9.8
10
10.2
5
1
0.2
7
20
150
5
8
BZX84B11-V
Z66
10.8
11
11.2
5
1
0.1
8
20
150
5
9
BZX84B12-V
Z67
11.8
12
12.2
5
1
0.1
8
25
150
6
9
BZX84B13-V
Z68
12.7
13
13.3
5
1
0.1
8
30
170
7
9
BZX84B15-V
Z69
14.7
15
15.3
5
1
0.05
10.5
30
200
7
9
BZX84B16-V
Z70
15.7
16
16.3
5
1
0.05
11.2
40
200
8
9.5
BZX84B18-V
Z71
17.6
18
18.4
5
1
0.05
12.6
45
225
8
9.5
BZX84B20-V
Z72
19.6
20
20.4
5
1
0.05
14
55
225
8
10
BZX84B22-V
Z73
21.6
22
22.4
5
1
0.05
15.4
55
250
8
10
BZX84B24-V
Z74
23.5
24
24.5
5
1
0.05
16.8
70
250
8
10
BZX84B27-V
Z75
26.5
27
27.5
2
0.5
0.05
18.9
80
300
8
10
BZX84B30-V
Z76
29.4
30
30.6
2
0.5
0.05
21
80
300
8
10
BZX84B33-V
Z77
32.3
33
33.7
2
0.5
0.05
23.1
80
325
8
10
BZX84B36-V
Z78
35.3
36
36.7
2
0.5
0.05
25.2
90
350
8
10
BZX84B39-V
Z79
38.2
39
39.8
2
0.5
0.05
27.3
130
350
10
12
BZX84B43-V
Z80
42.1
43
43.9
2
0.5
0.05
30.1
150
375
10
12
BZX84B47-V
Z81
46.1
47
47.9
2
0.5
0.05
32.9
170
375
10
12
BZX84B51-V
Z82
50
51
52
2
0.5
0.05
35.7
180
400
10
12
BZX84B56-V
Z83
54.9
56
57.1
2
0.5
0.05
39.2
200
425
9
11
BZX84B62-V
Z84
60.8
62
63.2
2
0.5
0.05
43.4
215
450
9
12
BZX84B68-V
Z85
66.6
68
69.4
2
0.5
0.05
47.6
240
475
10
12
BZX84B75-V
Z86
73.5
75
76.5
2
0.5
0.05
52.5
255
500
10
12
Rev. 1.9, 08-Dec-11
Document Number: 85763
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-V-Series
www.vishay.com
Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
mA
103
Ω
100
TJ = 25 °C
102
IF
5
4
10
3
rzj
TJ = 100 °C
1
10-1
33
2
27
22
10
TJ = 25 °C
10-2
18
15
5
4
10-3
12
3
10
2
10-4
10-5
0
6.8/8.2
6.2
1
0.2
0.4
0.6
0.8
1V
VF
18114
0.1
2
1
5
2
5
18119
Fig. 1 - Forward Characteristics
10
IZ
2
5
100 mA
Fig. 4 - Dynamic Resistance vs. Zener Current
mW
500
Ω 103
Tj = 25 °C
7
5
4
400
Rzj
47 + 51
43
39
36
3
Ptot
2
300
102
7
200
5
4
3
100
2
10
0.1
0
0
100
200 °C
Tamb
18115
Fig. 2 - Admissible Power Dissipation vs. Ambient Temperature
3
4 5
1
2
3 4 5
IZ
10
mA
Fig. 5 - Dynamic Resistance vs. Zener Current
K/W
103
1000
rzj
2
18120
TJ = 25 °C
5
4
3
2
Rzth
Rzth = RthA x VZ x
5
4
3
2
∆ VZ
∆Tj
102
100
5
4
3
5
4
3
2
2
10
2.7
3.6
4.7
5.1
5
4
3
2
5.6
1
0.1
2
18117
5
1
2
5
10
2
5
100 mA
IZ
Fig. 3 - Dynamic Resistance vs. Zener Current
Rev. 1.9, 08-Dec-11
10
5
4
3
negative
2
positive
1
1
18121
2
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 6 - Thermal Differential Resistance vs. Zener Voltage
Document Number: 85763
4
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-V-Series
www.vishay.com
Vishay Semiconductors
Ω
100
mV/°C
100
IZ = 5 mA
7
5
4
Rzj
∆ VZ
∆Tj
3
2
80
60
10
7
40
5
4
3
20
2
Tj = 25 °C
IZ = 5 mA
1
1
2
3
10
4 5
2
18122
3 4 5
0
0
100 V
VZ
20
60
40
Fig. 7 - Dynamic Resistance vs. Zener Voltage
80
100 V
VZ
18125
Fig. 10 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
mV/°C
25
V
9
20
7
8
∆ VZ
∆Tj
5 mA
IZ = 1 mA
20 mA
15
∆ VZ
51
6
5
43
4
10
36
3
5
2
1
0
0
-5
1
2
3
4 5
10
2
100 V
3 4 5
0
VZ
18123
25
0.7
VZ at IZ = 5 mA
0.6
8
0.4
7
0.3
0.2
6.2
5.9
0.1
5.6
0
1
0.8
0.6
0.4
0.2
0
5.1
-1
3.6
20
40
60
80
4.7
100 120 140 C
Tj
Fig. 9 - Change of Zener Voltage vs. Junction Temperature
Rev. 1.9, 08-Dec-11
140 °C
1.2
∆ VZ
0
80 100 120
Tj
∆VZ = Rzth x IZ
1.4
0.5
18124
60
V
1.6
15
10
- 0.2
40
Fig. 11 - Change of Zener Voltage vs. Junction Temperature
V
0.8
20
18126
Fig. 8 - Temperature Dependence of Zener Voltage vs.
Zener Voltage
∆ VZ
IZ = 2 mA
-1
- 0.2
- 0.4
18127
1
2
3
4 5
10
2
3 4 5
100 V
VZ at IZ = 5 mA
Fig. 12 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Document Number: 85763
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BZX84-V-Series
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Vishay Semiconductors
mA
30
V
5
10
12
∆VZ = Rzth x IZ
Tj = 25 °C
4
lZ
∆ VZ
3
22
27
Test
10 current
IZ 5 mA
1
33 36
IZ = 2 mA
0
0
0
20
40
60
80
0
100 V
40
lZ
8.2
8
lZ
30
6
20
4
Test
current
IZ 5 mA
40 V
Tj = 25 °C
6.8
3.3 4.7
30
VZ
mA
10
3.9 5.6
2.7
20
Fig. 15 - Breakdown Characteristics
Fig. 13 - Change of Zener Voltage from Turn-on up to the Point of
Thermal Equilibrium vs. Zener Voltage
Tj = 25 °C
10
18112
VZ
18128
10
18
IZ = 5 mA
2
mA
50
15
20
Test
current
IZ 5 mA
39
51
43
47
2
0
0
0
1
18111
2
3
4
5
6
7
8
9 10 V
VZ
Fig. 14 - Breakdown Characteristics
Rev. 1.9, 08-Dec-11
0
18113
10 20 30 40 50 60 70 80 90 100 V
VZ
Fig. 16 - Breakdown Characteristics
Document Number: 85763
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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BZX84-V-Series
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Vishay Semiconductors
LAYOUT FOR RT; JA TEST
Thickness: fiberglass 0.059" (1.5 mm)
Copper leads 0.012" (0.3 mm)
7.5 (0.3)
3 (0.12)
1 (0.4)
2 (0.8)
1 (0.4)
12 (0.47)
15 (0.59)
2 (0.8)
0.8 (0.03)
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
1.15 (0.045)
0° t
o8
°
0.2 (0.008)
0.098 (0.004)
0.175 (0.007)
0.1 (0.004) max.
0.550 ref. (0.022 ref.)
0.9 (0.035)
3.1 (0.122)
2.8 (0.110)
0.5 (0.020)
0.45 (0.018)
0.45 (0.018)
0.35 (0.014)
0.35 (0.014)
0.3 (0.012)
2.6 (0.102)
2.35 (0.093)
Foot print recommendation:
1 (0.039)
0.9 (0.035)
0.9 (0.035)
0.7 (0.028)
2 (0.079)
1.20 (0.047)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
1 (0.039)
0.9 (0.035)
0.95 (0.037)
0.95 (0.037)
Document no.: 6.541-5014.01-4
Rev. 8 - Date: 23.Sept.2009
17418
Rev. 1.9, 08-Dec-11
Document Number: 85763
7
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Revision: 12-Mar-12
1
Document Number: 91000
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