Microsemi ARF460AG Rf power mosfet n-channel enhancement mode Datasheet

ARF460A/G
ARF460B/G
125V, 150W, 65MHz
RF POWER MOSFET
N-CHANNEL ENHANCEMENT MODE
TO
-2
47
Common
Source
The ARF460A and ARF460B comprise a symmetric pair of common source RF power
transistors designed for push-pull scientific, commercial, medical and industrial RF power
amplifier applications up to 65MHz. They have been optimized for both linear and high
efficiency classes of operation.
• Specified 125 Volt, 40.68MHz Characteristics:
• Low Cost Common Source RF Package.
Output Power = 150 Watts.
• Low Vth thermal coefficient.
Gain = 13dB (Class AB)
• Low Thermal Resistance.
Efficiency = 75% (Class C)
• Optimized SOA for Superior Ruggedness
• RoHS Compliant
Maximum Ratings
Symbol
All Ratings: TC =25°C unless otherwise specified
Parameter
ARF460AG/BG
VDSS
Drain-Source Voltage
500
VDGO
Drain-Gate Voltage
500
Continuous Drain Current @ TC = 25°C
14
ID
Unit
V
A
VGS
Gate-Source Voltage
±30
V
PD
Total Power Dissipation @ TC = 25°C
250
W
Junction to Case
0.50
°C/W
RθJC
TJ, TSTG
TL
Operating and Storage Junction Temperature Range
-55 to 150
Lead Temperature: 0.063” from Case for 10 Sec.
°C
300
Static Electrical Characteristics
Parameter
Min
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA)
VDS(ON)
On State Drain Voltage
1
Typ
Max
500
(ID(ON) = 7A, VGS = 10V)
4
Unit
V
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C)
250
IGSS
Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)
±100
nA
gfs
Forward Transconductance (VDS = 25V, ID = 7A)
3.3
8
mhos
VGS(TH)
Gate Threshold Voltage (VDS = VGS, ID = 50mA)
3
5
Volts
IDSS
5.5
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
μA
050-5966 Rev E 10-2007
Symbol
Dynamic Characteristics
Symbol
ARF460AG/BG
Parameter
Test Conditions
CISS
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Min
Typ
Max
VGS = 0V
1200
1400
VDS = 150V
150
180
f = 1MHz
60
75
VGS = 15V
7
Unit
pF
VDD = 0.5VDSS
6
ID =ID[Cont.] @ 25°C
20
RG = 1.6Ω
4.0
7
Min
Typ
Max
f = 40.68MHz
13
15
dB
Idq = 50mA VDD = 125V
70
75
%
ns
Functional Characteristics
Symbol
Characteristic
GPS
Test Conditions
Common Source Amplifier Power Gain
η
Drain Efficiency
Ψ
Electrical Ruggedness VSWR 10:1
POUT = 150W
Unit
No Degradation in Output Power
1. Pulse Test: Pulse width < 380 μS, Duty Cycle < 2%.
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
5000
Ciss
CAPACITANCE (pf)
1000
Coss
500
Crss
100
50
10
.1
.5 1
5 10
50
150
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 2, Typical Capacitance vs. Drain-to-Source Voltage
050-5966 Rev E 10-2007
12
TJ = -55°C
VDS> ID (ON) x RDS (ON)MAX.
250μSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
8
4
TJ = +125°C
56
→
→ ← TJ = -55°C
TJ = +25°C →
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 3, Typical Transfer Characteristics
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
16
OPERATION HERE
LIMITED BY R
(ON)
DS
10
← 100uS
← 1mS
5
← 10mS
1
← 100mS
← DC
.5
.1
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
5 10
50 100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 4, Typical Maximum Safe Operating Area
ARF460AG/BG
25
1.2
VGS=15 & 10V
ID, DRAIN CURRENT (AMPERES)
VGS(th), THRESHOLD VOLTAGE
(NORMALIZED)
→
1.1
1.0
0.9
0.8
20
8V
15
7V
10
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
Figure 5, Typical Threshold Voltage vs Temperature
6.5V
6V
5
0
0.7
-50 -25
9V
5.5V
5V
4.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 6, Typical Output Characteristics
0.50
0.9
0.40
0.30
0.20
0.10
0
10-5
0.7
0.5
0.3
0.1
0.05
SINGLE PULSE
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 9, Typical Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
RC MODEL
Junction
temp. ( ”C)
Power
(Watts)
0.0284
0.00155F
0.165
0.00934F
0.307
0.128F
Case temperature
Figure 9a, TRANSIENT THERMAL IMPEDANCE MODEL
Table 1 - Typical Class AB Large Signal Input - Output Impedance
Freq. (MHz)
Zin (Ω)
ZOL (Ω)
2.0
20.9 - j 9.2
38 - j 2.6
13.5
2.4 - j 6.8
31 - j 14
27
.57 - j 2.6
19.6 - j 17.6
40
.31 - j 0.5
12.5 - j 15.8
65
.44 - j 1.9
6.0 - j 10.5
ZIN - Gate shunted with 25Ω
Idq = 100mA
ZOL - Conjugate of optimum load for 150 Watts output at Vdd=125V
050-5966 Rev E 10-2007
Z JC, THERMAL IMPEDANCE (°C/W)
q
0.60
ARF460AG/BG
L4
Bias
0 - 12V
+
-
L3
C6
RF
Input C2
C3
+
125V
-
C8
C7
R1
C9
L1
L2
R2
C1
C5
C4
DUT
40.68 MHz Test Circuit
C1 -- 2000 pF 100V NPO chip
mounted at gate lead
C2-C5 -- Arco 463 Mica trimmer
C6-C8 -- .1 μF 500V ceramic chip
C9 -- 2200 pF 500V chip
RF
L1 -- 4t #20 AWG .25"ID .3 "L ~80nH
Output L2 -- 6t #16 AWG .312" ID .4"L ~185nH
L3 -- 15t #24 AWG .25"ID ~.85uH
L4 -- VK200-4B ferrite choke 3uH
R1-R2 -- 51 Ohm 0.5W Carbon
DUT = ARF460A/B
TO-247 Package Outline
4.69 .185
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Source
20.80 (.819)
21.46 (.845)
NOTE: These two parts comprise a symmetric pair of RF
power transistors and meet the same electrical specifications.
The device pin-outs are the mirror image of each other to
allow ease of use as a push-pull pair.
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
Device
ARF- A
ARF- B
Gate ------- Drain
Source ---- Source
Drain ------- Gate
050-5966 Rev E 10-2007
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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