TSC FRAF1006G Isolated 10 amps. glass passivated fast recovery rectifier Datasheet

FRAF1001G - FRAF1007G
Isolated 10 AMPS. Glass Passivated
Fast Recovery Rectifiers
ITO-220AC
.185(4.7)
.173(4.4)
.406(10.3)
.390(9.90)
.124(3.16)
.118(3.00)
.134(3.4)DIA
.113(3.0)DIA
.272(6.9)
.248(6.3)
Features
.606(15.5)
.583(14.8)
Glass passivated chip junction.
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss
.063(1.6)
MAX
.161(4.1)
.146(3.7)
Mechanical Data
.112(2.85)
.100(2.55)
Cases: ITO-220AC molded plastic
Epoxy: UL 94V-0 rate flame retardant
Terminals: Pure tin plated, Lead free. Leads
solderable per MIL-STD-202, Method 208
guaranteed
Polarity: As marked
High temperature soldering guaranteed:
o
260 C /10 seconds 0.25”,(6.35mm) from
case.
Mounting position: Any
Weight: 2.24 grams
Mounting torque: 5 in – 1bs. max.
.110(2.8)
.098(2.5)
.055(1.4)
.043(1.1)
.030(0.76)
.020(0.50)
.035(0.9)
.020(0.5)
.071(1.8)
MAX
.543(13.8)
.512(13.2)
2
.100(2.55)
.100(2.55)
PIN 1
PIN 2
CASE
Case Positive
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TC = 55 oC
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
Symbol FRAF FRAF FRAF FRAF FRAF FRAF FRAF Units
1001G 1002G 1003G 1004G 1005G 1006G 1007G
V RRM
V RMS
V DC
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
V
V
V
I(AV)
10
A
IFSM
150
A
VF
1.3
5.0
100
V
uA
uA
nS
pF
o
C/W
o
C
(JEDEC method )
Maximum Instantaneous Forward Voltage @ 10A
Maximum DC Reverse Current @ TC=25 oC
at Rated DC Blocking Voltage @ TC=125 oC
IR
Maximum Reverse Recovery Time ( Note 2 )
Trr
Typical Junction Capacitance ( Note 1 ) TJ=25 oC
Cj
Typical Thermal Resistance (Note 3)
250
60
5.0
-65 to +150
T J ,T STG
1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
3. Thermal Resistance from Junction to Case, with Heatsink size 2” x 3” x 0.25” Al-Plate.
Operating and Storage Temperature Range
Notes:
R θJC
150
500
Version: A06
RATINGS AND CHARACTERISTIC CURVES (FRAF1001G THRU FRAF1007G)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
100
8
6
4
2
0
0
50
100
150
o
CASE TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
10
Tj=75 0C
4
2
1
PEAK FORWARD SURGE CURRENT. (A)
Tj=25 0C
0.4
150
0.2
TJ=125 0C
125
0.1
8.3ms Single Half Sine Wave
JEDEC Method
100
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
75
50
400
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
25
200
100
0
2
5
10
20
50
100
INSTANTANEOUS FORWARD CURRENT. (A)
1
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
300
0
Tj=25 C
f=1.0MHz
Vsig=50mVp-p
250
CAPACITANCE.(pF)
Tj=125 0C
40
INSTANTANEOUS REVERSE CURRENT. ( A)
AVERAGE FORWARD CURRENT. (A)
10
200
150
100
40
20
10
4
2
1
0.4
50
0
0.1
Tj=25oC
Pulse Width=300 s
1% Duty Cycle
0.2
0.5
1
5
10
50
100
0.1
0.6
500 1000
REVERSE VOLTAGE. (V)
0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
0
-0.25A
(+)
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Version: A06
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