Infineon IPP80N04S3-04 Optimos-t power-transistor Datasheet

IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
OptiMOS®-T Power-Transistor
Product Summary
V DS
40
V
R DS(on),max (SMD version)
3.8
mΩ
ID
80
A
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Type
Package
Marking
IPB80N04S3-04
PG-TO263-3-2
3N0404
IPI80N04S3-04
PG-TO262-3-1
3N0404
IPP80N04S3-04
PG-TO220-3-1
3N0404
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current1)
ID
Conditions
T C=25°C, V GS=10V
T C=100 °C,
V GS=10 V2)
Value
80
Unit
A
80
Pulsed drain current2)
I D,pulse
T C=25 °C
320
Avalanche energy, single pulse
E AS
I D=80 A
290
mJ
Gate source voltage
V GS
±20
V
Power dissipation
P tot
136
W
Operating and storage temperature
T j, T stg
-55 ... +175
°C
T C=25 °C
IEC climatic category; DIN IEC 68-1
Rev. 1.0
55/175/56
page 1
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Thermal characteristics2)
Thermal resistance, junction - case
R thJC
-
-
1.1
Thermal resistance, junction ambient, leaded
R thJA
-
-
62
SMD version, device on PCB
R thJA
minimal footprint
-
-
62
6 cm2 cooling area3)
-
-
40
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
40
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=90 µA
2.1
3.0
4.0
Zero gate voltage drain current
I DSS
V DS=40 V, V GS=0 V,
T j=25 °C
-
-
1
-
-
100
V DS=40 V, V GS=0 V,
T j=125 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
RDS(on)
V GS=10 V, I D=80 A
-
3.5
4.1
mΩ
V GS=10 V, I D=80 A,
SMD version
-
3.2
3.8
Rev. 1.0
page 2
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
4000
5200
-
1100
1400
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
170
250
Turn-on delay time
t d(on)
-
20
-
Rise time
tr
-
12
-
Turn-off delay time
t d(off)
-
30
-
Fall time
tf
-
10
-
Gate to source charge
Q gs
-
22
30
Gate to drain charge
Q gd
-
15
26
Gate charge total
Qg
-
60
80
Gate plateau voltage
V plateau
-
5.6
-
V
-
-
80
A
-
-
320
V GS=0 V, V DS=25 V,
f =1 MHz
V DD=20 V, V GS=10 V,
I D=80 A, R G=3.5 Ω
pF
ns
Gate Charge Characteristics2)
V DD=32 V, I D=80 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
Diode pulse current2)
I S,pulse
Diode forward voltage
V SD
V GS=0 V, I F=80 A,
T j=25 °C
-
0.95
1.3
V
Reverse recovery time2)
t rr
V R=20 V, I F=I S,
di F/dt =100 A/µs
-
35
-
ns
Reverse recovery charge2)
Q rr
-
35
-
nC
T C=25 °C
1)
Current is limited by bondwire; with an R thJC = 1.1K/W the chip is able to carry 141A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
1 Power dissipation
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
160
100
140
80
120
60
I D [A]
P tot [W]
100
80
40
60
40
20
20
0
0
0
50
100
150
200
0
50
100
T C [°C]
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; SMD
Z thJC = f(t p)
parameter: t p
parameter: D =t p/T
1000
101
1 µs
10 µs
100
100 µs
100
0.5
I D [A]
Z thJC [K/W]
1 ms
0.1
-1
10
0.05
0.01
10
10-2
single pulse
10-3
1
0.1
1
10
100
10-5
10-4
10-3
10-2
10-1
100
t p [s]
V DS [V]
Rev. 1.0
10-6
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2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; SMD
R DS(on) = f(I D); T j = 25 °C; SMD
parameter: V GS
parameter: V GS
360
20
18
320
280
16
7V
14
R DS(on) [mΩ]
240
I D [A]
6V
5.5 V
10 V
200
6.5 V
160
6V
120
80
10
8
6
5.5 V
40
12
6.5 V
4
5V
7V
10 V
2
0
0
2
4
6
0
8
20
40
60
80
100
120
140
180
I D [A]
V DS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V
R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD
parameter: T j
360
6
-55 °C
25 °C
320
280
5
R DS(on) [mΩ]
I D [A]
240
175 °C
200
160
4
120
3
80
40
0
2
3
4
5
6
7
8
V GS [V]
Rev. 1.0
2
-60
-20
20
60
100
T j [°C]
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2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS
C = f(V DS); V GS = 0 V; f = 1 MHz
parameter: I D
104
4
3.5
Ciss
V GS(th) [V]
C [pF]
900 µA
3
90 µA
Coss
103
2.5
2
1.5
Crss
102
1
-60
-20
20
60
100
140
0
180
5
10
15
20
25
30
V DS [V]
T j [°C]
11 Typical forward diode characteristicis
12 Typ. avalanche characteristics
IF = f(VSD)
I A S= f(t AV)
parameter: T j
parameter: T j(start)
100
103
25 °C
150 °C
100 °C
I F [A]
I AV [A]
102
175 °C
10
25 °C
1
10
100
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V SD [V]
Rev. 1.0
1
10
100
1000
t AV [µs]
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2007-05-03
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IPI80N04S3-04, IPP80N04S3-04
13 Typical avalanche energy
14 Typ. drain-source breakdown voltage
E AS = f(T j)
V BR(DSS) = f(T j); I D = 1 mA
parameter: I D
55
1400
1200
50
20 A
V BR(DSS) [V]
E AS [mJ]
1000
800
600
45
40
40 A
400
35
80 A
200
30
0
25
75
125
-60
175
-20
T j [°C]
20
60
100
140
180
T j [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 80 A pulsed
parameter: V DD
12
V GS
8V
10
Qg
32 V
V GS [V]
8
6
V g s(th)
4
2
Q g (th)
Q sw
Q gs
0
0
25
50
Q gate
Q gd
75
Q gate [nC]
Rev. 1.0
page 7
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2007
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non‑infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2007-05-03
IPB80N04S3-04
IPI80N04S3-04, IPP80N04S3-04
Revision History
Version
Rev. 1.0
Date
Changes
page 9
2007-05-03
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