ADPOW APTM100H45ST Full bridge series & parallel diodes mosfet power module Datasheet

APTM100H45ST
Full bridge
Series & parallel diodes
MOSFET Power Module
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
CR1B
Q1
CR3B
Q3
G3
G1
O UT1 OUT2
S1
CR2A
Q2
S3
CR4A
CR2B
CR4B
Q4
G4
G2
S4
S2
0/VBUS
NTC1
NTC2
G3
G4
S3
S4
VBUS
0/VBUS
OUT2
OUT1
S1
S2
NTC2
G1
G2
NTC1
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1000
18
14
72
±30
450
357
18
50
2500
Unit
V
A
V
mΩ
W
A
June, 2004
CR3A
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM100H45ST – Rev 2
VBUS
CR1A
VDSS = 1000V
RDSon = 450mΩ max @ Tj = 25°C
ID = 18A @ Tc = 25°C
APTM100H45ST
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVDSS Drain - Source Breakdown Voltage
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 250µA
Min
1000
VGS = 0V,VDS= 1000V
Tj = 25°C
VGS = 0V,VDS= 800V
Tj = 125°C
VGS = 10V, ID = 9A
VGS = VDS, ID = 2.5mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
3
Min
VGS = 10V
VBus = 500V
ID = 18A
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Typ
4350
715
120
154
Max
Unit
V
100
500
450
5
±100
mΩ
V
nA
Max
Unit
µA
pF
26
nC
97
10
Inductive switching @ 125°C
VGS = 15V
VBus = 667V
ID = 18A
R G = 5Ω
Rise Time
Typ
12
ns
121
35
Inductive switching @ 25°C
VGS = 15V, VBus = 667V
ID = 18A, R G = 5Ω
639
Inductive switching @ 125°C
VGS = 15V, VBus = 667V
ID = 18A, R G = 5Ω
1046
µJ
380
µJ
451
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 133V
di/dt = 200A/µs
IF = 30A
VR = 133V
di/dt = 200A/µs
Min
Tj = 125°C
Typ
30
1.1
1.4
0.9
Tj = 25°C
24
Tj = 125°C
48
Tj = 25°C
33
Tj = 125°C
150
Tc = 85°C
APT website – http://www.advancedpower.com
Max
Unit
A
1.15
V
June, 2004
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
ns
nC
2–6
APTM100H45ST – Rev 2
Series diode ratings and characteristics
APTM100H45ST
Parallel diode ratings and characteristics
Symbol Characteristic
IF(A V)
Maximum Average Forward Current
VF
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
50% duty cycle
IF = 30A
IF = 60A
IF = 30A
IF = 30A
VR = 667V
di/dt = 200A/µs
IF = 30A
VR = 667V
di/dt = 200A/µs
Min
Tj = 125°C
Typ
30
1.9
2.2
1.7
Tj = 25°C
290
Tj = 125°C
390
Tj = 25°C
670
Tj = 125°C
2350
Tc = 65°C
Thermal and package characteristics
Symbol Characteristic
RthJC
Junction to Case
VISOL
TJ
TSTG
TC
Torque
Wt
Min
Typ
Transistor
Diode
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To Heatsink
Symbol Characteristic
R25
Resistance @ 25°C
B 25/85 T25 = 298.16 K
Min
R 25

 1
1 
exp  B25 / 85 
− 
 T25 T 

Unit
A
2.3
V
ns
nC
Max
0.35
1.2
Unit
°C/W
V
150
125
100
4.7
160
M5
Temperature sensor NTC
RT =
2500
-40
-40
-40
Max
Typ
68
4080
Max
°C
N.m
g
Unit
kΩ
K
T: Thermistor temperature
RT : Thermistor value at T
APT website – http://www.advancedpower.com
3–6
APTM100H45ST – Rev 2
June, 2004
Package outline
APTM100H45ST
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.4
0.35
0.9
0.3
0.7
0.25
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
7V
VGS =15&8V
40
6.5V
30
6V
20
5.5V
10
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
70
60
50
40
30
TJ =25°C
20
10
5V
0
5
10
15
20
25
30
0
Normalized to
VGS=10V @ 9A
VGS=10V
1.2
1.1
VGS=20V
1
0.9
0.8
0
10
20
30
ID, Drain Current (A)
2
3
4
5
6
7
8
9 10
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.3
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS , Drain to Source Voltage (V)
1.4
TJ=-55°C
40
50
20
18
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
June, 2004
0
TJ=125°C
0
4–6
APTM100H45ST – Rev 2
50
ID, Drain Current (A)
I D, Drain Current (A)
60
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=9A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
100
1.2
1.0
0.9
0.8
0.7
100µs
limited by
RDSon
1ms
10
Single pulse
TJ=150°C
10ms
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
10000
Ciss
1000
Coss
Crss
100
10
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=18A
TJ=25°C
12
10
VDS=200V
V DS =500V
VDS=800V
8
6
4
2
0
0
40
80
120
160
200
Gate Charge (nC)
June, 2004
0
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM100H45ST – Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100H45ST
APTM100H45ST
Delay Times vs Current
Rise and Fall times vs Current
60
160
t d(off)
V DS =667V
RG =5Ω
T J=125°C
L=100µH
50
120
100
tr and tf (ns)
td(on) and td(off) (ns)
140
VDS=667V
RG=5Ω
TJ=125°C
L=100µH
80
60
40
30
tr
20
40
td(on)
20
10
0
0
5
10
15
20
25
30
35
40
5
10
I D, Drain Current (A)
35
40
2.5
V DS =667V
RG =5Ω
T J=125°C
L=100µH
1.5
Eon
1
Eoff
0.5
V DS =667V
ID=18A
T J=125°C
L=100µH
2
Switching Energy (mJ)
Switching Energy (mJ)
15
20 25
30
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
2
1.5
Eoff
Eon
1
0.5
0
0
5
10
15
20
25
30
35
40
0
5
I D, Drain Current (A)
10
15
20
25
30
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
I DR, Reverse Drain Current (A)
250
VDS=667V
D=50%
RG=5Ω
T J=125°C
200
Frequency (kHz)
tf
150
100
50
0
8
10
12
14
16
ID, Drain Current (A)
18
TJ =150°C
TJ =25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM100H45ST – Rev 2
June, 2004
6
100
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