Fairchild FDME820NZT N-channel powertrenchâ® mosfet 20 v, 9 a, 18 mî© Datasheet

FDME820NZT
N-Channel PowerTrench® MOSFET
20 V, 9 A, 18 mΩ
Features
General Description
„ Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A
This Single N-Channel MOSFET has been designed using
Fairchild Semiconductor’s advanced Power Trench process to
optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
leadframe.
„ Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A
„ Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A
„ Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Applications
„ Free from halogenated compounds and antimony oxides
„ Li-lon Battery Pack
„ HBM ESD protection level >2.5 kV (Note3)
„ Baseband Switch
„ RoHS Compliant
„ Load Switch
„ DC-DC Conversion
G
D
Pin 1
D
D
D
D
D
G
S
S
D
D
BOTTOM
TOP
MicroFET 1.6x1.6 Thin
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
TA = 25 °C
(Note 1a)
-Pulsed
PD
TJ, TSTG
Ratings
20
Units
V
±12
V
9
40
Power Dissipation for Single Operation
TA = 25 °C
(Note 1a)
2.1
Power Dissipation for Single Operation
TA = 25 °C
(Note 1b)
0.7
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
70
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
190
°C/W
Package Marking and Ordering Information
Device Marking
8T
Device
FDME820NZT
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C
Package
MicroFET 1.6x1.6 Thin
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
FDME820NZT N-Channel PowerTrench® MOSFET
April 2012
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 16 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±12 V, VDS = 0 V
±10
μA
1.0
V
20
V
20
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-3
rDS(on)
Drain to Source On Resistance
0.5
0.8
mV/°C
VGS = 4.5 V, ID = 9 A
14
VGS = 2.5 V, ID = 7.5 A
17
24
VGS = 1.8 V, ID = 7 A
26
32
VGS = 4.5 V, ID = 9 A ,
TJ = 125 °C
19
24
VDS = 10 V, VGS = 0 V,
f = 1 MHz
865
pF
203
pF
190
pF
1.0
Ω
18
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Switching Characteristics
td(on)
Turn-On Delay Time
9
ns
tr
Rise Time
5
ns
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 10 V, ID = 4 A
VGS = 4.5 V, RGEN = 2 Ω
19
ns
5
ns
VDD = 4.2 V, ID = 3 A, VGS = 4.3 V
8.0
nC
VDD = 4.2 V, ID = 3 A, VGS = 4.5 V
8.5
nC
1.4
nC
3.2
nC
VDD = 10 V, ID = 9 A
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.6 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 9 A
(Note 2)
0.8
1.2
IF = 9 A, di/dt = 100 A/us
V
V
18
ns
4
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 70 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
b. 190 °C/W when mounted on a
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C
2
www.fairchildsemi.com
FDME820NZT N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
40
5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
VGS = 2.5 V
30
VGS = 1.8 V
20
VGS = 2 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
VGS = 1.5 V
0
0
0.5
1.0
1.5
2.0
4
VGS = 1.8 V
VGS = 2 V
3
2
VGS = 3 V
0
2.5
Figure 1. On Region Characteristics
VGS = 4.5 V
0
10
20
ID, DRAIN CURRENT (A)
40
80
ID = 9 A
VGS = 4.5 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
ID = 9 A
40
TJ = 125 oC
20
TJ = 25 oC
-50
-25
0
25
50
75
0
0.9
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
1.8
2.7
3.6
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
Figure 4. On-Resistance vs Gate to
Source Voltage
1000
40
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID, DRAIN CURRENT (A)
VGS = 2.5 V
1
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.6
-75
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 1.5 V
VDS = 5 V
30
20
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
0
0.0
0.5
1.0
1.5
2.0
2.5
100
TJ = 150 oC
10
TJ = 25 oC
1
0.1
TJ = -55 oC
0.01
0.001
0
3.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDME820NZT N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2000
ID = 9 A
3.6
1000
VDD = 8 V
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
2.7
VDD = 10 V
1.8
VDD = 12 V
Ciss
Coss
0.9
0.0
f = 1 MHz
VGS = 0 V
0
3
6
9
100
0.1
12
1
Figure 7. Gate Charge Characteristics
20
Figure 8. Capacitance vs Drain
to Source Voltage
-1
20
10
Ig, GATE LEAKAGE CURRENT (A)
IAS, AVALANCHE CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
TJ = 25 oC
TJ = 100 oC
TJ = 125 oC
-2
VGS = 0 V
10
-3
10
-4
10
TJ = 125 oC
-5
10
-6
10
-7
10
TJ = 25 oC
-8
10
-9
10
-10
1
0.001
0.01
0.1
1
10
10
100
0
3
tAV, TIME IN AVALANCHE (ms)
P(PK), PEAK TRANSIENT POWER (W)
100 us
1 ms
THIS AREA IS
LIMITED BY rDS(on)
10 ms
SINGLE PULSE
TJ = MAX RATED
100 ms
1s
10 s
DC
RθJA = 190 oC/W
0.01
0.01
12
15
18
1000
10
0.1
9
Figure 10. Gate Leakage Current vs Gate
to Source Voltage
100
1
6
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
ID, DRAIN CURRENT (A)
Crss
TA = 25 oC
0.1
1
10
100
TA = 25 oC
10
1
0.1
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (s)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C
SINGLE PULSE
RθJA = 190 oC/W
100
Figure 12. Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDME820NZT N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 190 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C
5
www.fairchildsemi.com
FDME820NZT N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
0.65
0.10 C
1.60
2X
6
1.60
4
No vias or traces
allowed in
this area
0. 55
1.90
0.40
0.10 C
1
2X
P IN #1 IDENT
0.15
0.35
0. 30
3
0. 50
TOP VIEW
RECOMM ENDED LAND PATTERN OPT 1
0.65
0.15
0. 35
0.20
0. 30
0.55 MAX
0.10 C
0. 08 C
(0.15)
6
C
0.05
0.00
4
No vias or traces
allowed in
t his area
0.62
1.90
SIDE VIEW
0.55
(0.40)
1
3
0. 50
RECOMM ENDED LAND PATTERN OPT 2
(0. 125)
(0.40)
(0.20)
0.72
0.62
1
3
0. 670
0. 570
(0.55)
6
NOTES:
A. DOES NOT FULLY CON FORM TO JEDEC
REGISTRATION
B. DIMEN SIONS ARE IN MILLIMETERS.
C. D IMENSIONS AND TOL ERANCES PER
ASME Y1 4.5M, 1 994.
D. LAND PATTERN RECOMMEN DATION IS
BASED ON FSC D ESIGN ONLY
E. DRAWING FI LENAME: MKT-UMLP06Frev4
0.30 2X
0.20
4
1.150
1.050
0.30 2X
0.20
0.50
1.00
0.10
0.05
C A B
C
BOTTOM VIEW
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C
6
www.fairchildsemi.com
FDME820NZT N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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As used here in:
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDME820NZT Rev.C
7
www.fairchildsemi.com
FDME820NZT N-Channel PowerTrench® MOSFET
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