Fairchild BC859 Pnp epitaxial silicon transistor Datasheet

BC856- BC860
tm
PNP Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
3
• Low Noise: BC859, BC860
• Complement to BC846 ... BC850
2
1
SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings*
Symbol
VCBO
VCEO
Ta = 25°C unless otherwise noted
Parameter
Value
Units
: BC856
: BC857/860
: BC858/859
-80
-50
-30
V
V
V
: BC856
: BC857/860
: BC858/859
-65
-45
-30
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current (DC)
-100
mA
PC
Collector Power Dissipation
310
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Typ.
ICBO
Collector Cut-off Current
VCB= -30V, IE=0
hFE
DC Current Gain
VCE= -5V, IC= -2mA
VCE (sat)
Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-90
-250
VBE (sat)
Base-Emitter Saturation Voltage
IC= -10mA, IB= -0.5mA
IC= -100mA, IB= -5mA
-700
-900
VBE (on)
Base-Emitter On Voltage
VCE= -5V, IC= -2mA
VCE= -5V, IC= -10mA
fT
Current Gain Bandwidth Product
VCE= -5V, IC= -10mA
f=100MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
NF
Noise Figure
: BC856/857/858
: BC859/860
VCE= -5V, IC= -200µA
RG=2KΩ, f=1KHz
: BC859
: BC860
VCE= -5V, IC= -200µA
RG=2KΩ, f=30~15000Hz
110
-600
Max.
Units
-15
nA
800
-660
-300
-650
mV
mV
mV
mV
-750
-800
150
mV
mV
MHz
6
pF
2
1
10
4
dB
dB
1.2
1.2
4
2
dB
dB
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
BC856- BC860 Rev. B
1
www.fairchildsemi.com
BC856- BC860 PNP Epitaxial Silicon Transistor
August 2006
Classification
A
B
C
hFE
110 ~ 220
200 ~ 450
420 ~ 800
Ordering Information
Device(note1)
Device Marking
Package
Packing Method
Qty(pcs)
Pin Difinitions
BC856AMTF
9AA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC856BMTF
9AB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC856CMTF
9AC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC857AMTF
9BA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC857BMTF
9BB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC857CMTF
9BC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC858AMTF
9CA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC858BMTF
9CB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC858CMTF
9CC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC859AMTF
9DA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC859BMTF
9DB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC859CMTF
9DC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC860AMTF
9EA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC860BMTF
9EB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC860CMTF
9EC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
Note1 :
Affix “-A,-B,-C” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
2
BC856- BC860 Rev. B
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BC856- BC860 PNP Epitaxial Silicon Transistor
hFE Classification
-50
1000
IB = - 400µA
IB = - 350µA
-40
VCE = - 5V
IB = - 300µA
-35
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-45
IB = - 250µA
-30
IB = - 200µA
-25
IB = - 150µA
-20
IB = - 100µA
-15
-10
IB = - 50µA
-5
-0
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
100
10
-0.1
-20
VCE[V], COLLECTOR-EMITTER VOLTAGE
-100
Figure 2. DC current Gain
-10
-100
-1
IC[mA], COLLECTOR CURRENT
IC = 10 IB
VBE(sat)
-0.1
VCE(sat)
-0.01
-0.1
VCE = - 5V
-10
-1
-0.1
-1
-10
-100
-0.2
-0.4
IC[mA], COLLECTOR CURRENT
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
f=1MHz IE=0
1
-10
-100
-1.0
-1.2
1000
f=1MHz IE=0
100
10
-1
-10
IC[mA], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Current Gain Bandwidth Product
3
BC856- BC860 Rev. B
-0.8
Figure 4. Base-Emitter On Voltage
10
-1
-0.6
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Cob[pF], CAPACITANCE
-10
IC[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
-1
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BC856- BC860 PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
BC856- BC860 PNP Epitaxial Silicon Transistor
Mechanical Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
4
BC856- BC860 Rev. B
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
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Full Production
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any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20
5
BC856- BC860 Rev. B
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BC856- BC860 PNP Epitaxial Silicon Transistor
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