Vishay B80C800DM Glass passivated ultrafast bridge rectifier Datasheet

B40C800DM thru B380C800DM
www.vishay.com
Vishay Semiconductors
Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• Ideal for automated placement
• High surge current capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
~
~
TYPICAL APPLICATIONS
~
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
~
Case Style DFM
MECHANICAL DATA
Case: DFM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
PRIMARY CHARACTERISTICS
IF(AV)
0.9 A
VRRM
65 V to 600 V
IFSM
45 A
IR
10 μA
VF
1.0 V
TJ max.
125 °C
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class 1A
whisker test
Polarity: As marked on body
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
Maximum repetitive peak reverse voltage
VRRM
65
125
200
400
600
V
Maximum RMS input voltage R- and C-load
VRMS
40
80
125
250
380
V
Maximum average forward
output current for free air
operation at TA = 45 °C
IF(AV)
R- and L-load
C-load
0.9
0.8
A
Maximum DC blocking voltage
VDC
65
125
200
400
600
V
Maximum peak working voltage
VRWM
90
180
300
600
900
V
Maximum non-repetitive peak voltage
VRSM
100
200
350
650
1000
V
Maximum repetitive peak forward surge current
IFRM
10
A
Peak forward surge current single sine-wave on
rated load
IFSM
45
A
Rating for fusing at TJ = 125 °C (t < 100 ms)
I 2t
10
A2s
Minimum series resistor C-load at VRMS = ± 10 %
RT
1.0
2.0
4.0
8.0
12.0

CL
5000
2500
1000
500
200
μF
Maximum load capacitance
+ 50 %
- 10 %
Operating junction temperature range
Storage temperature range
Revision: 19-Aug-11
TJ
- 40 to + 125
°C
TSTG
- 40 to + 150
°C
Document Number: 88533
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C800DM thru B380C800DM
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward
voltage drop per diode
0.9 A
Maximum reverse current at rated
repetitive peak voltage per diode
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
B250
C800DM
B380
C800DM
UNIT
VF
1.0
V
IR
10
μA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
B40
C800DM
B80
C800DM
B125
C800DM
RJA
RJL
Typical thermal resistance (1)
B250
C800DM
B380
C800DM
40
15
UNIT
°C/W
Note
(1) Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRD PCKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.416
45
50
Tube
B380C800DM-E3/45
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0
50 to 60 Hz
Resistive or Inductive Load
0.8
Capacitive Load
0.6
0 - 10 µF
10 - 100 µF
> 100 µF
0.4
Mounted on P.C.B. with 0.06"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
0.2
Average Forward Output Current (A)
Average Forward Output Current (A)
1.0
50 to 60 Hz
Resistive or Inductive Load
0.8
Capacitive Load
0 - 10 µF
10 - 100 µF
> 100 µF
0.6
0.4
Mounted on P.C.B. with 0.06"
(1.5 mm) Lead Length
Copper Pads
0.51 x 0.51" (13 x 13 mm)
0.2
0
0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Ambient Temperature (°C)
Ambient Temperature (°C)
Fig. 1 - Derating Curves Output Rectified Current for
B40C800D...B125C800DM
Fig. 2 - Derating Curves Output Rectified Current for
B250C800D...B360C800DM
Revision: 19-Aug-11
Document Number: 88533
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
B40C800DM thru B380C800DM
www.vishay.com
Vishay Semiconductors
10
TJ = 125 °C
10 ms Single Sine-Wave
Instantaneous Reverse Current (µA)
Peak Forward Surge Current (A)
50
40
30
20
10
1.0 Cycle
0
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
100
10
0
20
40
60
80
100
Number of Cycles at 50 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 5 - Typical Reverse Leakage Characteristics Per Diode
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Junction Capacitance (pF)
Instantaneous Forward Surge Current (A)
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
10
1
0.01
0.4
1
0.6
0.8
1.0
1.2
1.4
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 6 - Typical Junction Capacitance Per Diode
Fig. 4 - Typical Forward Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2) 0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.080 (2.03)
0.050 (1.27)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.185 (4.69)
0.150 (3.81)
0.023 (0.58)
0.018 (0.46)
0.205 (5.2)
0.195 (5.0)
Revision: 19-Aug-11
0.075 (1.90)
0.055 (1.39)
0.013 (0.33)
0.0086 (0.22)
0.350 (8.9)
0.300 (7.6)
Document Number: 88533
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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