ETC2 JANTX2N6798 100 v, 200 v, 400 v & 500 v, n-channel, enhancement mode mosfet power transistor Datasheet

2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
JANTX, JANTXV POWER MOSFET IN TO-205 AF PACKAGE,
QUALIFIED TO MIL-PRF-19500/557
100 V, 200 V, 400 V & 500 V, N-Channel,
Enhancement Mode MOSFET Power Transistor
FEATURES
• Low RDS(on)
• Ease of Paralleling
• Qualified to MIL-PRF-19500/557
DESCRIPTION
This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for
Military requirements where small size, high performance and high reliability are required, and in applications such as
switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits.
PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25°C
PART NUMBER
2N6796
2N6798
2N6800
2N6802
S C H E M ATIC
V DS, Volts
100
200
400
500
R DS(on)
.18
.40
1.00
1.50
ID, A m p s
8.0
5.5
3.0
2.5
MECHANICAL OUTLINE
Pin Connection
Pin 1: Source
Pin 2: Gate
Pin 3: Drain
(Case)
7 03 R0
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted
Parameter
ID @ VGS = 10V, TC = 25°C
JANTXV, JANTX, 2N6796
Units
Continuous Drain Current
8.0
A
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
5.0
A
1
ID M
Pulsed Drain Current
32
A
P D @ TC = 25°C
Maximum Power Dissipation
25
W
Linear Derating Factor
0.2
W/°C
± 20
V
VG S
Gate-Source Voltage
EA S
TJ
TS T G
Single Pulse Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
2
4.3
4
mJ
-55 to 150
300(.06 from case for 10 sec)
°C
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
BVDSS Drain-Source
Breakdown Voltage
R DS(on) Static Drain-to-Source
On-State Resistance
VGS(th) Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain
Current
IG S S
Gate -to-Source Leakage Forward
IG S S
Gate -to-Source Leakage Reverse
Q G(on) On-state Gate Charge
QGS
Gate-to-Source Charge
Q Gd
Gate-to-Drain (“Miller”) Charge
tD(on)
Turn-On Delay Time
tr
Rise Time
tD(off)
Turn-Off Delay Time
tr
Fall Time
Typ.
Max.
100
----2.0
-----------------------
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
--VS D
ttrr
Reverse Recovery Time
---
Units
V
Test Conditions
VG S = 0V, ID =1.0 mA,
VG S = 10 V, ID = 5.0 A 3
VG S = 10 V, ID = 8.0 A 3
VDS = VG S,ID = 250 µA
VD S = 80 V, VG S = 0V
VD S = 80 V, VG S = 0V, TJ = 125°C
VG S = 20 V
VG S = -20 V
VG S = 10 V, ID = 8A
VD S = 50 V
See note 4
VD D = 30 V, ID = 5.0 A, RG =7.5
See note 4
-----------------------------
.18
.195
4.0
25
250
100
-100
28.5
6.3
16.6
30
75
40
45
nA
nA
nC
nC
nC
ns
ns
ns
ns
Typ.
-----
Max.
1.5
300
Units
V
ns
Typ.
--0.21
---
Max.
5.0
--175
Units
Test Conditions
°C/W
Mounting surface flat,
smooth, and greased
V
µA
Test Conditions
TJ = 25°C, IS = 8.0A 3,VG S = 0 V 3
TJ = 25°C, IF= 8.0 A,di/dt < 100 A/µs
3
Thermal Resistance
Parameter
Junction-to-Case
R thJC
R thCS Case-to-sink
R thJA
Junction-to-Ambient
1.
2.
3.
4.
Min.
-------
Typical socket mount
Repetitive Rating: Pulse width limited by maximum junction temperature.
@VD D= 25 V, Starting TJ = 25°C, L = 100 µH + 10%, RG = 25 , Peak IL = 8.0 A
Pulse width < 300 µs; Duty Cycle < 2 %
See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted
Parameter
ID @ VGS = 10V, TC = 25°C
JANTXV, JANTX, 2N6798
Units
Continuous Drain Current
5.5
A
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
3.5
A
ID M
Pulsed Drain Current
22
A
P D @ TC = 25°C
Maximum Power Dissipation
25
W
Linear Derating Factor
0.2
W/°C
1
VG S
Gate-Source Voltage
EA S
TJ
TS T G
Single Pulse Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
± 20
2
2.0
V
4
mJ
-55 to 150
300(.06 from case for 10 sec)
°C
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
BVDSS Drain-Source
Breakdown Voltage
R DS(on) Static Drain-to-Source
On-State Resistance
VGS(th) Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain
Current
IG S S
Gate -to-Source Leakage Forward
IG S S
Gate -to-Source Leakage Reverse
Q G(on) On-state Gate Charge
QGS
Gate-to-Source Charge
Q Gd
Gate-to-Drain (“Miller”) Charge
tD(on)
Turn-On Delay Time
tr
Rise Time
tD(off)
Turn-Off Delay Time
tr
Fall Time
Typ.
Max.
200
----2.0
-----------------------
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
--VS D
ttrr
Reverse Recovery Time
---
Units
V
Test Conditions
VG S = 0V, ID =1.0 mA,
VG S = 10 V, ID = 3.5 A 3
VG S = 10 V, ID = 5.5 A 3
VDS = VG S,ID = 250 µA
VD S = 160 V, VG S = 0V
VD S = 160 V, VG S = 0V, TJ = 125°C
VG S = 20 V
VG S = -20 V
VG S = 10 V, ID = 5.5 A
VD S = 100 V
See note 4
VD D = 77 V, ID = 3.5 A, RG =7.5
See note 4
-----------------------------
.40
.42
4.0
25
250
100
-100
42.1
5.3
28.1
30
50
50
40
nA
nA
nC
nC
nC
ns
ns
ns
ns
Typ.
-----
Max.
1.4
500
Units
V
ns
Typ.
--0.21
---
Max.
5.0
--175
Units
Test Conditions
°C/W
Mounting surface flat,
smooth, and greased
V
µA
Test Conditions
TJ = 25°C, IS = 5.5 A 3,VG S = 0 V 3
TJ = 25°C, IF= 5.5 A,di/dt < 100 A/µs
3
Thermal Resistance
Parameter
R thJC
Junction-to-Case
R thCS Case-to-sink
R thJA
Junction-to-Ambient
1.
2.
3.
4.
Min.
-------
Typical socket mount
Repetitive Rating: Pulse width limited by maximum junction temperature.
@VD D= 50 V, Starting TJ = 25°C, L = 100 µH + 10%, RG = 25 , Peak IL = 5.5 A
Pulse width < 300 µs; Duty Cycle < 2 %
See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted
Parameter
ID @ VGS = 10V, TC = 25°C
JANTXV, JANTX, 2N6800
Units
Continuous Drain Current
3.0
A
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
2.0
A
ID M
Pulsed Drain Current
14
A
P D @ TC = 25°C
Maximum Power Dissipation
25
W
Linear Derating Factor
0.2
W/°C
1
VG S
Gate-Source Voltage
EA S
TJ
TS T G
Single Pulse Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
± 20
2
0.51
V
4
-55 to 150
300(.06 from case for 10 sec)
mJ
°C
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
BVDSS Drain-Source
Breakdown Voltage
R DS(on) Static Drain-to-Source
On-State Resistance
VGS(th) Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain
Current
IG S S
Gate -to-Source Leakage Forward
IG S S
Gate -to-Source Leakage Reverse
Q G(on) On-state Gate Charge
QGS
Gate-to-Source Charge
Q Gd
Gate-to-Drain (“Miller”) Charge
tD(on)
Turn-On Delay Time
tr
Rise Time
tD(off)
Turn-Off Delay Time
tr
Fall Time
Typ.
Max.
400
V
Test Conditions
VG S = 0V, ID =1.0 mA,
VG S = 10 V, ID = 2.0 A 3
VG S = 10 V, ID = 3.0 A 3
VDS = VG S,ID = 250 µA
VD S = 320 V, VG S = 0V
VD S = 320 V, VG S = 0V, TJ = 125°C
VG S = 20 V
VG S = -20 V
VG S = 10 V, ID = 3.0A
VD S = 200 V
See note 4
VD D = 176 V, ID = 2 A, RG =7.5
See note 4
-----------------------------
1.0
1.10
4.0
25
250
100
-100
33
5.8
16.6
30
35
55
35
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
--VS D
ttrr
Reverse Recovery Time
---
Typ.
-----
Max.
1.4
700
Units
V
ns
Thermal Resistance
Parameter
Junction-to-Case
R thJC
R thCS Case-to-sink
R thJA
Junction-to-Ambient
Typ.
--0.21
---
Max.
5.0
--175
Units
Test Conditions
°C/W
Mounting surface flat,
smooth, and greased
1.
2.
3.
4.
----2.0
-----------------------
Units
Min.
-------
V
µA
Test Conditions
TJ = 25°C, IS = 3 A 3,VG S = 0 V
TJ = 25°C, IF= 3.0 A,di/dt<100A/µs
Typical socket mount
Repetitive Rating: Pulse width limited by maximum junction temperature.
@VD D= 50 V, Starting TJ = 25°C, L = 100 µH + 10%, RG = 25 , Peak IL = 3.0 A
Pulse width < 300 µs; Duty Cycle < 2 %
See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
3
2N6796, JANTX2N6796 JANTXV2N6796
2N6798, JANTX2N6798 JANTXV2N6798
2N6800, JANTX2N6800, JANTXV2N6800
2N6802, JANTX2N6802, JANTXV2N6802
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted
Parameter
ID @ VGS = 10V, TC = 25°C
JANTXV, JANTX, 2N6802
Units
Continuous Drain Current
2.5
A
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
1.5
A
11
A
1
ID M
Pulsed Drain Current
P D @ TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VG S
Gate-Source Voltage
EA S
TJ
TSTG
Single Pulse Avalanche Energy
Operating Junction
Storage Temperature Range
Lead Temperature
2
25
W
0.20
W/°C
± 20
V
.35
4
mJ
-55 to 150
300 (.06 from case for 10 sec)
°C
°C
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
BVDSS Drain-Source
Breakdown Voltage
R DS(on) Static Drain-to-Source
On-State Resistance
VGS(th) Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain
Current
IG S S
Gate -to-Source Leakage Forward
IG S S
Gate -to-Source Leakage Reverse
Q G(on) On-state Gate Charge
QGS
Gate-to-Source Charge
Q Gd
Gate-to-Drain (“Miller”) Charge
tD(on)
Turn-On Delay Time
tr
Rise Time
tD(off)
Turn-Off Delay Time
tr
Fall Time
Typ.
Max.
500
V
Test Conditions
VG S = 0V, ID =1.0 mA,
VG S = 10 V, ID = 1.5 A 3
VG S = 10 V, ID = 2.5 A 3
VDS = VG S,ID = 250 µA
VD S = 400 V, VG S = 0V
VD S = 400 V, VG S = 0V, TJ = 125°C
VG S = 20 V
VG S = -20 V
VG S = 10 V, ID = 2.5 A
VD S = 250 V
See note 4
VD D = 225 V, ID = 1.5 A, RG = 7.5
See note 4
-----------------------------
1.5
1.6
4.0
25
250
100
-100
29.5
4.5
28.1
30
30
55
30
nA
nA
nC
nC
nC
ns
ns
ns
ns
Source-Drain Diode Ratings and Characteristics
Parameter
Min.
Diode Forward Voltage
--VS D
ttrr
Reverse Recovery Time
---
Typ.
-----
Max.
1.4
900
Units
V
ns
Thermal Resistance
Parameter
Junction-to-Case
R thJC
R thCS Case-to-sink
R thJA
Junction-to-Ambient
Typ.
--0.21
---
Max.
5.0
--175
Units
Test Conditions
°C/W
Mounting surface flat,
smooth, and greased
1.
2.
3.
4.
----2.0
-----------------------
Units
Min.
-------
V
µA
Test Conditions
TJ = 25°C, IS = 2.5 A 3,VG S = 0 V
TJ = 25°C, IF= 2.5 A,di/dt<100A/µs 3
Typical socket mount
Repetitive Rating: Pulse width limited by maximum junction temperature.
@VD D= 50 V, Starting TJ = 25°C, L = 100 uH + 10%, RG = 25 , Peak IL = 2.5 A
Pulse width < 300 µs; Duty Cycle < 2 %
See MIL-S-19500/557
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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