Comchip CEFB201 Smd efficient fast recovery rectifier Datasheet

SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
CEFB201 Thru CEFB205
Reverse Voltage: 50 - 600 Volts
Forward Current: 2.0 Amp
Features
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
flammability classification 94V-0
Super fast recovery time for high efficient
Built-in strain relief
Low forward voltage drop
SMB/DO-214AA
0.083(2.11)
0.075(1.91)
0.155(3.94)
0.130(3.30)
0.185(4.70)
0.160(4.06)
0.012(0.31)
0.006(0.15)
Mechanical Data
0.096(2.44)
0.083(2.13)
Case: JEDEC DO-214AA molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Mounting position: Any
Approx. Weight:0.093 gram
0.050(1.27)
0.030(0.76)
0.008(0.20)
0.203(0.10)
0.220(5.59)
0.200(5.08)
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characterics
Parameter
Symbol
CEFB
201
CEFB
202
CEFB
203
CEFB
204
CEFB
205
Unit
Max. Repetitive Peak Reverse Voltage
V RRM
50
100
200
400
600
V
Max. DC Blocking Voltage
V DC
50
100
200
400
600
V
V RMS
35
70
140
280
420
V
Max. RMS Voltage
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
( JEDEC method )
I FSM
Max. Average Forward Current
Io
Max. Instantaneous Forward Current
at 2.0 A
VF
Reverse recovery time
Trr
Max. DC Reverse Current at Rated DC
Blocking Voltage
Ta=25 C
Ta=100 C
IR
2.0
0.875
25
A
1.1
1.25
35
50
V
nS
5.0
250
uA
15
C/W
C
Max. Thermal Resistance (Note 1)
R
Operating Junction Temperature
Tj
-55 to +150
Storage Temperature
T STG
-55 to +150
JL
A
35
40
C
Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
MDS0210023A
Page 1
SMD Efficient Fast Recovery Rectifier
COMCHIP
www.comchip.com.tw
Rating and Characteristic Curves (CEFB201 Thru CEFB205)
Fig.2 - Forward Characteristics
Fig. 1 - Reverse Characteristics
100
10
10
Forward current ( A )
Reverse Current ( uA )
CEFB201-203
Tj=125 C
1.0
Tj=75 C
1.0
CEFB204
CEFB205
0.1
0.01
0.1
Tj=25 C
Pulse width 300uS
4% duty cycle
Tj=25 C
0. 01
0
0.001
20
40
60
80
100
120
140
0 0.2
0.4
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 3 - Junction Capacitance
Fig. 4 - Non Repetitive Forward
Surge Current
50
Peak Surge Forward Current ( A )
200
100
Junction Capacitance (pF)
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Tj=25 C
10
8.3mS Single Half Sine
Wave JEDEC methode
40
30
Tj=25 C
20
10
0
2
0.1
1.0
10
100
1
Reverse Voltage (V)
5
10
50
1 00
Number of Cycles at 60Hz
Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
2.8
trr
10W
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
( )
(+)
25Vdc
(approx.)
D.U.T.
PULSE
GENERATOR
(NOTE 2)
( )
1W
NONINDUCTIVE
Average Forward Current ( A )
50W
NONINDUCTIVE
0
-0.25A
(+)
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
-1.0A
2.4
2.0
1.6
1.2
0.8
Single Phase
Half Wave 60Hz
0.4
00
25
50
75
100
125
150
175
1cm
SET TIME BASE FOR
Ambient Temperature ( C)
50 / 10ns / cm
MDS0210023A
Page 2
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