STMicroelectronics BUL57 High voltage fast-switching npn power transistor Datasheet

BUL57
BUL57FP

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■
■
■
■
■
■
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
NPN TRANSISTORS
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125oC
LARGE RBSOA
TO-220FP FULLY ISOLATED PACKAGE
(U.L. COMPLIANT)
1
2
3
3
1
TO-220
2
TO-220FP
APPLICATIONS:
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
■
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds.
The devices are designed for use in lighting
applications and low cost switch-mode power
supplies.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
BUL57
V CES
V CEO
V EBO
IC
I CM
IB
I BM
P t ot
T stg
Tj
Collector-Emitter Voltage (V BE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
o
Total Dissipation at Tc = 25 C
St orage Temperature
Max. Operating Junction Temperature
January 1999
Uni t
BUL57FP
700
400
9
8
16
4
7
85
35
-65 to 150
150
V
V
V
A
A
A
A
W
o
C
o
C
1/7
BUL57 / BUL57FP
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
TO-220
TO-220F P
1.47
62.5
3.5
62.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
I CES
I CEO
V CEO(sus)
V EBO
V CE(sat )∗
V BE(s at)∗
Parameter
Test Cond ition s
Collector Cut-off
Current (V BE = 0)
V CE = 700 V
V CE = 700 V
Collector Cut-off
Current (I B = 0)
V EC = 400 V
Collector-Emitter
Sustaining Voltage
I C = 100 mA
Emitter-Base Voltage
(I C = 0)
I E = 10 mA
Collector-Emitter
Saturation Voltage
IC
IC
IC
IC
IC
2
3
4
5
8
A
A
A
A
A
o
L = 25 mH
IB
IB
IB
IB
IB
=
=
=
=
=
DC Current Gain
IC = 2 A
IC = 4 A
I C = 10 mA
VCE = 5 V
VCE = 5 V
VCE = 5 V
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
IC = 3 A
I B1 = 0.6 A
L = 200 µH
V CL = 250 V
I B2 = -1.2 A
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
IC = 3 A
I B1 = 0.6 A
L = 200 µH
V CL = 250 V
I B2 = -1.2 A
o
Tj = 125 C
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
IC = 3 A
V BE(of f) = -5 V
V CL = 250 V
ts
tf
INDUCTIVE LO AD
Storage Time
Fall Time
IC = 3 A
V BE(of f) = -5V
V CL = 250 V
o
T j = 125 C
IB1 = 0.6 A
R BB = 0 Ω
L = 200 µH
ts
tf
RESISTIVE LO AD
Storage Time
Fall Time
V CC = 300 V
I B1 = 0.4 A
Tp = 30 µs
IC = 2 A
IB2 = -0.4 A
Max.
Un it
100
500
µA
µA
250
µA
400
V
9
V
0.4 A
0.6 A
0.8 A
1 A
2 A
IC = 2 A
IC = 5 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Typ .
Tj = 125 C
Base-Emitt er
Saturation Voltage
h F E∗
2/7
=
=
=
=
=
Min.
0.65
0.75
1.2
2
V
V
V
V
V
1.2
1.6
V
V
2
IB = 0.4 A
IB = 1 A
15
6
8
40
1.8
60
2.6
110
µs
ns
2.6
110
IB1 = 0.6 A
R BB = 0 Ω
L = 200 µH
1
54
1.6
100
µs
ns
µs
ns
1.5
90
3
µs
ns
4.2
350
ms
ns
BUL57 / BUL57FP
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BUL57 / BUL57FP
Inductive Fall Time
Inductive Storage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
RBSOA and Inductive Load Switching Test
Circuit
1) Fast electronic switc h
2) Non-inductive Resistor
3) Fast recovery Rect ifier
4/7
BUL57 / BUL57FP
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/7
BUL57 / BUL57FP
TO-220FP MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.45
0.7
0.017
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
¯
1 2 3
L2
6/7
L4
BUL57 / BUL57FP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
http://www.st.com
.
7/7
Similar pages