Fairchild FJP9100 High voltage power darlington transistor Datasheet

FJP9100
FJP9100
High Voltage Power Darlington Transistor
• Built-in Resistor at Base-Emitter : R1(Typ.)=2000Ω
• Built-in Resistor at Base : RB(Typ.)=700 ± 100Ω
TO-220
1
1.Base
2.Collector
3.Emitter
NPN Silicon Darlington Transistor
Equivalent Circuit
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
600
Units
V
VCEO
Collector-Emitter Voltage
275
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current (DC)
4
A
ICP
*Collector Current (Pulse)
6
A
IB
Base Current (DC)
0.5
A
PC
Collector Dissipation (TC=25°C)
40
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
C
B
RB
R1
R 1 ≅ 2000Ω
R B ≅ 700Ω
E
* Pulse Test: PW=300µs, duty Cycle=2% Pulsed
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC = 500µA, IE = 0
Min.
600
Typ.
Max.
Units
V
BVCER
Collector-Emitter Breakdown Voltage
IC = 1mA, RBE = 330Ω
600
V
BVCEO(sus)
Collector-Emitter Sustaining Voltage
IC = 1.5A, IB = 50mA, L=25mH
275
V
10
BVEBO
Emitter-Base Breakdown Voltage
IE = 500µA, IC = 0
ICBO
Collector Cut-off Current
VCB = 600V, IE = 0
IEBO
Emitter Cut-off Current
VEB = 10V, IC = 0
hFE
DC Current Gain
VCE = 5V, IC = 0.5A
VCE = 5V, IC = 3A
V
1000
1000
0.1
mA
0.1
mA
5000
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 2A, IB = 5mA
1.5
VBE(sat)
Base-Emitter Saturation Voltage
IC = 2A, IB = 5mA
6.0
Cob
Output Capacitance
VCB = 10V, IE = 0, f=1MHz
©2003 Fairchild Semiconductor Corporation
110
V
V
pF
Rev. A, May 2003
FJP9100
Typical Characteristics
5
10k
o
Ta = 75 C
o
4
Ta = 125 C
DC CURRENT GAIN
IC [A], COLLECTOR CURRENT
IB = 1.4mA
3
IB = 0.6mA
IB = 0.4mA
2
1k
o
Ta = 25 C
o
Ta = - 25 C
100
1
V CE = 5V
IB = 0
0
0
1
2
3
4
5
6
10
0.1
7
1
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characterstic
Figure 2. DC current Gain
100
100
IC = 400 IB
IC = 400 IB
VBE(sat), SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
10
IC [A], COLLECTOR CURRENT
o
Ta = 125 C
10
o
Ta = 75 C
o
1
Ta = 25 C
o
Ta = - 25 C
0.1
0.1
1
10
o
Ta = 125 C
o
Ta = 75 C
o
1
Ta = 25 C
o
Ta = - 25 C
0.1
0.1
10
IC [A], COLLECTOR CURRENT
1
10
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
10k
1000
Cob [pF], OUPUT CAPACITANCE
RB & R1 [Ω], RESISTANCE
f = 1MHz, IE = 0
R1
1k
RB
100
-50
-25
0
25
50
75
100
125
150
o
TA [ C], ABBIENT TEMPERATURE
Figure 5. RB & R1 vs. Ambient Temperature
©2003 Fairchild Semiconductor Corporation
100
10
1
10
100
VCB [V], COLLECTOR-BASE VOLTAGE
Figure 6. Output Capacitance
Rev. A, May 2003
FJP9100
Typical Characteristics (Continued)
PC [W], COLLECTOR POWER DISSIPATION
50
45
40
35
30
25
20
15
10
5
0
0
25
50
75
100
125
150
175
o
TC [ C], CASE TEMPERATURE
Figure 7. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJP9100
Package Dimensions
TO-220
4.50 ±0.20
2.80 ±0.10
(3.00)
+0.10
1.30 –0.05
18.95MAX.
(3.70)
ø3.60 ±0.10
15.90 ±0.20
1.30 ±0.10
(8.70)
(1.46)
9.20 ±0.20
(1.70)
9.90 ±0.20
1.52 ±0.10
0.80 ±0.10
2.54TYP
[2.54 ±0.20]
10.08 ±0.30
(1.00)
13.08 ±0.20
)
(45°
1.27 ±0.10
+0.10
0.50 –0.05
2.40 ±0.20
2.54TYP
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
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design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
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The datasheet is printed for reference information only.
©2003 Fairchild Semiconductor Corporation
Rev. I2
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