HP AMMC-3040 18-36 ghz double-balanced mixer with integrated lo amplifier/multiplier Datasheet

Agilent AMMC-3040
18-36 GHz Double-Balanced Mixer
with Integrated LO Amplifier/
Multiplier
Data Sheet
Features
• High IIP3 : +23 dBm
• Wide Bandwidth
• RF: 18-36 GHz
• LO: 18-36 GHz
• IF: DC-3 GHz
• Fundamental or Sub-Harmonic
Mixing
Chip Size:
2520 x 760 µm (99.2 x 29.9 mils)
Chip Size Tolerance:
± 10 µm (± 0.4 mils)
• Up or Down Converter
Chip Thickness:
100 ± 10 µm (4 ± 0.4 mils)
• Conversion Loss: 9.5dB
Pad Dimensions:
75 x 75 µm (3 ± 0.4 mils)
• P1dB : +17 dBm
• Low LO Drive Power: + 2 dBm
Description
• Usable to 42 GHz
The AMMC- 3040 is a broadband
Double- Balanced Mixer (DBM)
with an integrated high- gain LO
amplifier. This MMIC can be
used as either an up converter
or down converter in microwave
or millimeter wave applications.
If desired, the LO amplifier can
be biased to function as a
frequency multiplier to enable
second harmonic mixing of the
LO input. The mixer section
ofthe AMMC- 3040 is fabricated
using a suspended metal system
to create a unique, broadsidecoupled balun structure (patent
pending) to achieve exceptional
bandwidth. The MMIC provides
repeatable conversion loss
without tuning, making it highly
suitable for automated assembly
processes.
Applications
• Point-to-Point Radio
• LMDS
• SATCOM
AMMC-3040 Absolute Maximum Ratings[1]
Symbol
Parameters/Conditions
Units
Min.
Max.
VD1, 2, 3, 4 Positive Drain Voltage
V
VG1, 2, 3, 4 Gate Voltage
V
Idd
Total Drain Current
mA
550
Tch
Operating Channel Temp.
°C
+160
Tb
Operating Backside Temp.
°C
-55
Tstg
Storage Case Temp.
°C
-65
Tmax
Maximum Assembly Temp (60 sec max) °C
5
-3.0
0.5
+165
+300
Note:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
Note: These devices are ESD sensitive. The following precautions are strongly recommended:
Ensure that an ESD approved carrier is used when dice are transported from one destination to another.
Personal grounding is to be worn at all times when handling these devices.
AMMC-3040 DC Specifications/Physical Properties[1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
VD1, 2, 3, 4
Drain Supply Operating Voltage
V
2
3.5
5
Id1
First Stage Drain Supply Current
Vdd = 3.5 V, Vg1 = −0.5 V
mA
50
ID2, 3, 4
Total Drain Supply Current for Stages 2, 3 and 4
(Vdd = 3.5 V, Vgg = −0.5 V)
mA
225
VG1, 2, 3, 4
Gate Supply Operating Voltages (Idd = 250 mA)
V
-0.5
Vp
Pinch-off Voltage (Vdd = 3.5 V, Idd < 10 mA
V
-1.5
θch-b
Thermal Resistance[2] (Backside Temp. Tb= 25°C)
°C/W
49
Notes:
1. Measured in wafer form with Tchuck = 25°C. (Except θch-bs.)
2. Channel-to-backside Thermal Resistance (θch-b)=58°C/Ω at Tchannel (Tc)=150 °C as measured using the liquid crystal method. Thermal Resistance
at backside temperature (Tb)=25 °C calculated from measured data.
AMMC-3040 RF Specifications
Zo=50 Ω, Tb = 25°C, IF Output = 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
Symbol
Parameters and Test Conditions
Units
V dd =3.5 V,
I dd =250 mA
V dd =4.5 V,
I dd =150 mA
Typ.
Max.
Typ.
12
10
Lc
Conversion Loss, Down Conversion [1]
dB
9.5
Lc
Conversion Loss, Up Conversion [2]
dB
10
10.5
ISOL L-R
LO - RF Isolation at RF Frequency = 22 GHz [3]
dB
31
32
P−1 dB
Input Power at 1 dB Conversion Loss
Compression, Down Conversion
dBm
17
17
IIP3
Input 3rd Order Intercept Point,
Down Conversion at RF Frequency = 22 GHz [4]
dBm
23
22
Notes:
1. 100% on-wafer RF testing is done at RF frequency = 18, 22, and 32 GHz.
2. IF Input = 2 GHz, IF Input Power = -20 dBm, RF freq = LO + IF
3. Does not include LO amplifier gain of ~20 dB.
4. ∆f = 2 MHz, RF Input Power = -5 dBm.
2
AMMC-3040 Typical Performance
Zo=50 Ω, Tb = 25°C, IF = 2 GHz, LO Input Power = +2 dBm, RF Input Power = -20 dBm, except as noted.
14
10
8
6
LO = - 4 dBm
LO = 0 dBm
LO = 4 dBm
4
12
11
10
12
11
10
9
9
0
20 22 24 26 28 30 32 34 36 38 40 42
8
20 22 24 26 28 30 32 34 36 38 40 42
8
18
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
11
10
10
9
8
22
24
26
28
30
32
Figure 4. Conversion Loss, Down Conversion.
Vd = 4.5 V, Id = 150 mA, LO freq = RF + IF.
23 GHz
35 GHz
8
-1
0
1
2
3
4
5
-4 -3 -2
6
20
P1dB (dBm)
20
P1dB (dBm)
18
- 2 dBm
0 dBm
2 dBm
4 dBm
15
10
2
3
4
5
6
10
5
10
18 20 22 24 26 28 30 32 34 36 38 40
0
18 20 22 24 26 28 30 32 34 36 38 40
0
18
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 7. Input Power at 1 dB Conversion Loss
Compression, Down Conversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF + IF.
1
15
5
12
0
Figure 5. Conversion Loss Vs. LO Input Power, Up Figure 6. Conversion Loss Vs. LO Input Power,
Conversion. Vd = 3.5 V, Id = 250 mA, LO freq = RF Down Conversion. Vd = 3.5 V, Id = 250 mA, LO
- IF.
freq = RF - IF.
25
LO =
LO =
LO =
LO =
-1
LO INPUT POWER (dBm)
25
14
34
9
20
16
32
10
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
30
6
-4 -3 -2
34
28
7
6
20
26
11
7
9
8
18
23 GHz
35 GHz
CONVERSION LOSS (dB)
12
24
12
11
CONVERSION LOSS (dB)
13
22
Figure 3. Conversion Loss, Up Conversion.
Vd = 4.5 V, Id = 150 mA, LO freq = RF + IF.
12
LO = 0 dBm
LO = 2 dBm
LO = 4 dBm
20
RF FREQUENCY (GHz)
Figure 2. Conversion Loss, Down Conversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF - IF.
14
LO = 0 dBm
LO = 2 dBm
LO = 4 dBm
13
2
Figure 1. Conversion Loss, UpConversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF - IF.
CONVERSION LOSS (dB)
LO = - 4 dBm
LO = 0 dBm
LO = 4 dBm
CONVERSION LOSS (dB)
13
CONVERSION LOSS (dB)
CONVERSION LOSS (dB)
12
P1dB (dBm)
14
14
Figure 8. Input Power at 1 dB Conversion Loss
Compression, Up Conversion.
Vd = 3.5 V, Id = 250 mA, LO freq = RF + IF.
LO = 0 dBm
LO = 2 dBm
LO = 4 dBm
20
22
24
26
28
30
32
34
RF FREQUENCY (GHz)
Figure 9. Input Power at 1 dB Conversion Loss
Compression, Down Conversion.
Vd = 4.5 V, Id = 150 mA, LO freq = RF + IF.
3
25
25
20
20
20
15
10
LO = 0 dBm
LO = 2 dBm
LO = 4 dBm
5
0
18
20
22
24
26
28
30
32
34
IIP3 (dBm)
25
IIP3 (dBm)
P1dB (dBm)
AMMC-3040 Typical Performance(cont.)
15
10
5
0
20 22 24 26 28 30 32 34 36 38 40 42
0
18
40
40
35
35
30
30
25
20
15
22
24
26
28
30
32
34
RF FREQUENCY (GHz)
Figure 11. Input 3rd Order Intercept Point,, Down Figure 12. Input 3rd Order Intercept Point, Down
Conversion. Vd = 3.5 V, Id = 250 mA, LO freq = RF Conversion. Vd = 4.5 V, Id = 150 mA, LO freq =
- IF.
RF - IF.
ISOLATION (dB)
ISOLATION (dB)
20
RF FREQUENCY (GHz)
Figure 10. Input Power at 1 dB Conversion Loss
Compression, Up Conversion.
Vd = 4.5 V, Id = 150 mA, LO freq = RF + IF.
25
20
15
10
10
5
5
0
20 22 24 26 28 30 32 34 36 38 40 42
0
18 20
22
24
26
28
30
32
34
36
RF FREQUENCY (GHz)
RF FREQUENCY (GHz)
Figure 13. LO-RF Isolation, Down Conversion.
Vd = 3.5 V, Id = 250 mA. Note: Does not include
LO Buffer amplifier gain of ~20 dB, LO freq = RF
- IF.
420
700
Vd1
760
10
5
RF FREQUENCY (GHz)
0 82
15
Figure 14. LO-RF Isolation, Down Conversion.
Vd = 4.5 V, Id = 150 mA. Note: Does not include
LO Buffer amplifier gain of ~18 dB, LO freq = RF
- IF.
914
Vg2
1141
Vd2
1475
Vd3
Vd4
2018
2520
IF
760
480
LO
RF
96
0
Vg1
0 98
Vg2
568
Vg3
894
Figure 15. AMMC-3040 Bond Pad Locations, dimensions in microns.
4
Vg4
1320
IF
2018
1720
300
To VDD DC Drain
Supply Feed
Gold Plated Shim
(optional)
100 pF
To VDD DC Drain
Supply Feed
IF
Cb
0.6 pF
~500 µm long
wire
Gold Plated Shim
(optional)
LO
100 pF
IF
Cb
0.6 pF
~500 µm long
wire
LO
RF
100 pF
Cb
To VGG DC Gate
Supply Feed
RF
100 pF
To VGG DC Gate
Supply Feed
(a) Fundamental LO. Single drain and single gate supply assembly for using
the LO amplifier in fundamental frequency mixer applications.
Cb
100 pF
Cb
To VGG DC Gate
Supply Feed
(b) Sub-harmonic LO. Separate first-stage gate bias supply to use the LO
amplifier as a multiplier for application as a sub-harmonic mixer.
(Note: To assure stable operation bias supply feeds should be bypassed to ground with a capacitor, Cb > 100 pF typical)
Figure 16. AMMC-3040 Assembly diagram.
Biasing for Fundamental Mixing
The recommended DC bias
condition for the AMMC- 3040
LO amplifier when used as a
fundamental frequency mixer is
with all four drains connected
to a single 3.5 to 4.5V supply
and all four gates connected to
an adjustable negative supply
voltage as shown in Figure 16
(a). The gate voltage is adjusted
for a total drain supply current
of typically 150 to 250 mA.
The second, third, and fourth
stage DC drain bias lines are
connected internally and
therefore require only a single
bond wire. A separate bond
wire is needed for the first
stage DC drain bias, Vd1.
The third and fourth stage DC
gate bias lines are connected
internally. A total of three DC
gate bond wires are required:
one for Vg1, one for Vg2, and
one for the Vg3 / Vg4 connection.
The internal matching circuitry
at the RF input creates a 50ohm DC and RF path to ground.
Any DC voltage applied to the
RF input must be maintained
below 1 volt, otherwise, a
blocking capacitor should be
used. The RF output is AC
coupled.
No ground bond wires are
needed since the ground
connection is made by means of
plated through via holes to the
backside of the chip.
Biasing for Sub-Harmonic Mixing
The LO amplifier in the AMMC3040 can also be used as a
frequency doubler. Optimum
conversion efficiency as a
doubler is obtained with an
input power level of 3 to 8
dBm.
Frequency multiplication is
achieved by reducing the bias
on the first stage FET to
efficiently generate harmonics.
The remaining three stages are
then used to provide
amplification.
While many bias methods could
be used to generate and amplify
the desired harmonics within
the AMMC- 3040’s LO amplifier,
the following information is
suggested as a starting point for
sub- harmonic mixing
applications.
Frequency doubling is
accomplished by biasing the
first stage FET at pinch- off by
setting Vg1 = Vp ≈ –1.1 volts.
The remaining three stages are
biased for normal amplification,
e.g., Vgg is adjusted such that
Id2 + Id3 + Id4 ≈ 250 mA. The
drain voltage, Vdd, for all four
stages should be 3.5 to 4.5 volts.
The assembly diagram shown in
Figure 16 (b) can be used as a
guideline.
In all cases, Cb > 100 pF to
assure stability.
IF Output Port
The IF output port is located
near the middle of the die,
allowing this connection to be
made from either side of the
chip for maximum layout
flexibility.
The LO and RF signals are
reflectively terminating at the IF
port by connecting a 20- mil
(500 um) long bond wire from
the IF output pad on the MMIC
to a shunt 0.6 pF chip capacitor
mounted off- chip as indicated
in Figure 16.
5
Assembly Techniques
The backside of the AMMC- 3040
chip is RF ground. For
microstripline applications, the
chip should be attached directly
to the ground plane (e.g., circuit
carrier or heatsink) using
electrically conductive epoxy[1].
For best performance, the
topside of the MMIC should be
brought up to the same height
as the circuit surrounding it.
This can be accomplished by
mounting a gold plated metal
shim (same length and width as
the MMIC) under the chip,
which is of the correct
thickness to make the chip and
adjacent circuit coplanar.
The amount of epoxy used for
chip and or shim attachment
should be just enough to
provide a thin fillet around the
bottom perimeter of the chip or
shim. The ground plane should
be free of any residue that may
jeopardize electrical or
mechanical attachment.
For use on coplanar circuits,
the chip can be mounted
directly on the topside ground
plane of the circuit as long as
care is taken to ensure
adequate heat sinking. Multiple
vias underneath the chip will
significantly improve heat
conduction.
www.agilent.com/
semiconductors
For product information and a complete list of
distributors, please go to our web site.
Data subject to change.
Copyright  2004 Agilent Technologies, Inc.
February 12, 2004
5989-0528EN
The location of the RF, LO, and
IF bond pads is shown in
Figure 15. Note that all RF
input and output ports are in a
Ground- Signal- Ground
configuration. The IF port is
located near the middle of the
die, which allows for maximum
layout flexibility since the IF
connection can be made from
either side of the chip.
RF connections should be kept
as short as reasonable to
minimize performance
degradation due to series
inductance. A single bond wire
is sufficient for all signal
connections. However, doublebonding with 0.7 mil gold wire
or the use of gold mesh[2] is
recommended for best
performance, especially near the
high end of the frequency range.
Thermosonic wedge bonding is
the preferred method for wire
attachment to the bond pads.
Gold mesh can be attached
using a 2 mil round tracking
tool and a tool force of
approximately 22 grams with an
ultrasonic power of roughly 55
dB for a duration of 76 ± 8 mS.
A guided wedge at an ultrasonic
power level of 64 dB can be
used for the 0.7 mil wire. The
recommended wire bond stage
temperature is 150 ± 2° C.
Caution should be taken to not
exceed the Absolute Maximum
Ratings for assembly
temperature and time.
The chip is 100 µm thick and
should be handled with care.
This MMIC has exposed air
bridges on the top surface and
should be handled by the edges
or with a custom collet (do not
pick up die with vacuum on die
center.)
This MMIC is also static
sensitive and ESD handling
precautions should be taken.
Notes:
1. Ablebond 84-1 LM1 silver epoxy is
recommended.
2. Buckbee-Mears Corporation, St. Paul, MN,
800-262-3824
Ordering Information:
AMMC-3040-W10 = waffle pack, 10
devices per tray
AMMC-3040-W50 = waffle pack, 50
devices per tray
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