MOTOROLA MRF21060SR3 Rf power field effect transistor Datasheet

MOTOROLA
Freescale Semiconductor, Inc.
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SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
MRF21060R3
MRF21060SR3
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications with frequencies from
2.1 to 2.2 GHz. Suitable for W - CDMA, CDMA, TDMA, GSM and multicarrier
amplifier applications.
• Typical W - CDMA Performance: 2140 MHz, 28 Volts
5 MHz Offset @ 4.096 MHz BW, 15 DTCH
Output Power — 6.0 Watts
Power Gain — 12.5 dB
Drain Efficiency — 15%
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2.11 GHz, 60 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
2170 MHz, 60 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF21060R3
CASE 465A - 06, STYLE 1
NI - 780S
MRF21060SR3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain - Source Voltage
VDSS
65
Vdc
Gate - Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
180
0.98
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value
Unit
RθJC
1.02
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Class
2 (Minimum)
Machine Model
M3 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
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MRF21060R3 MRF21060SR3
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Drain - Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
V(BR)DSS
65
—
—
Vdc
Zero Gate Voltage Drain Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
6
µAdc
Gate - Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
VGS(th)
2
—
4
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 500 mAdc)
VGS(Q)
2.5
3.9
4.5
Vdc
Drain - Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.27
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
4.7
—
S
Crss
—
2.7
—
pF
Two - Tone Common - Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
Gps
11
12.5
—
dB
Two - Tone Drain Efficiency
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
η
31
34
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
IMD
—
- 30
- 28
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 60 W PEP, IDQ = 500 mA,
f = 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz)
IRL
—
- 12
—
dB
P1dB
—
60
—
W
OFF CHARACTERISTICS
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ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Reverse Transfer Capacitance (1)
(VDS = 28 Vdc, VGS = 0, f = 1 MHz)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)
Pout, 1 dB Compression Point
(VDD = 28 Vdc, Pout = 60 W CW, f = 2170 MHz)
Output Mismatch Stress
(VDD = 28 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 2110 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
MRF21060R3 MRF21060SR3
2
MOTOROLA RF DEVICE DATA
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R4
VGG
B2
R3
R1
+
VDD
+
+
+
R2
C1
C2
C3
C4
C5
Z8
Z1
Z2
Z3
Z4
Z5
Z6
C6
C7
C8
Z9
Z10
RF
INPUT
B3
Z11
Z12
Z13
Z14
Z15
RF
OUTPUT
C11
Z7
C12
Freescale Semiconductor, Inc...
C9
C10
B2 - B3
C1
C2, C7
C3, C8
C4, C5
C6
C9, C11
C10
C12
R1
R2
R3
R4
Z1
Z2
DUT
Ferrite Beads, Fair Rite #2743019447
10 µF, 50 V Electrolytic Chip Capacitor, Panasonic #ECEV1HV100R
1000 pF Chip Capacitors, ATC #100B102JCA500X
0.10 µF Chip Capacitors, Kemet #CDR33BX104AKWS
4.7 pF Chip Capacitors, ATC #100B4R7JCA500X
22 µF, 35 V Tantalum Surface Mount Chip Capacitor, Sprague
9.1 pF Chip Capacitors, ATC #100B9R1JCA500X
0.8 pF - 8.0 pF Variable Capacitor, Johanson Gigatrim
0.4 pF - 4.5 pF Variable Capacitor, Johanson Gigatrim
1 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
560 kΩ, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
10 Ω, 1/4 W Fixed Film Chip Resistor, 0.08″ x 0.13″
0.743″ x 0.080″ Microstrip
0.070″ x 0.100″ Microstrip
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
Z12
Z13
Z14
Z15
Board
0.180″ x 0.100″ Microstrip
0.152″ x 0.293″ Microstrip
0.216″ x 0.100″ Microstrip
0.114″ x 0.410″ Microstrip
0.626″ x 0.872″ Microstrip
1.050″ x 0.050″ Microstrip
0.830″ x 0.050″ Microstrip
0.596″ x 1.040″ Microstrip
0.186″ x 0.315″ Microstrip
0.097″ x 0.525″ Microstrip
0.353″ x 0.138″ Microstrip
0.112″ x 0.080″ Microstrip
0.722″ x 0.080″ Microstrip
0.030″ Glass Teflon, Arlon
GX - 0300 - 55 - 22, 2 oz Cu
Figure 1. MRF21060 Test Circuit Schematic
MOTOROLA RF DEVICE DATA
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MRF21060R3 MRF21060SR3
3
Freescale Semiconductor, Inc.
TO GATE
BIAS
FEEDTHRU
C1 R1
R3
C5
TO DRAIN
BIAS
FEEDTHRU
C6
R4
B2
C2 C3 C4
R2
B3
C7
C8
C9
C11
C12
Freescale Semiconductor, Inc...
C10
MRF21060
Figure 2. MRF21060 Test Circuit Component Layout
MRF21060R3 MRF21060SR3
4
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
−5
30
−10
IRL
25
15
−20
−25
Gps
10
−30
IMD
5
0
2080
−35
2100
2120
2140
2160
f, FREQUENCY (MHz)
2180
−40
2200
VDD = 28 Vdc
IDQ = 700 mA, f = 2140 MHz, Channel Spacing
(Channel Bandwidth): 5 MHz @ 4.096 MHz BW
15 DTCH
40
35
−35
−40
25
15
900 mA
−45
700 mA
−50
500 mA
−60
−65
0.1
−55
5
2
4
6
8
10
12
14
Pout, OUTPUT POWER (WATTS Avg.) W−CDMA
−60
16
Figure 4. W - CDMA ACPR, Power Gain and
Drain Efficiency versus Output Power
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
100
VDD = 28 Vdc
IDQ = 700 mA, f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
−30
−40
3rd Order
−50
−60
5th Order
7th Order
−70
−80
0.1
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
100
Figure 6. Intermodulation Distortion Products
versus Output Power
14
−22
14
Pout = 60 W (PEP), IDQ = 500 mA
f = 2140 MHz
Two−Tone Measurement,
100 kHz Tone Spacing
900 mA
G ps , POWER GAIN (dB)
13
700 mA
12
500 mA
10
0.1
−50
Gps
10
Figure 5. Intermodulation Distortion
versus Output Power
11
−45
−20
VDD = 28 Vdc
f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
−40
−55
η
ACPR
20
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−35
−30
30
−25
−30
−25
VDD = 28 Vdc
f = 2140 MHz
Two−Tone Measurement, 100 kHz Tone Spacing
1.0
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 7. Power Gain versus Output Power
MOTOROLA RF DEVICE DATA
13.5
IMD
−24
−26
−28
−30
13
−32
Gps
−34
12.5
−36
100
12
22
24
26
28
30
−38
32
VDD, DRAIN VOLTAGE (VOLTS)
Figure 8. Power Gain and
Intermodulation Distortion versus Supply Voltage
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MRF21060R3 MRF21060SR3
5
IMD, INTERMODULATION DISTORTION (dBc)
20
−15
VDD = 28 Vdc
Pout = 60 W (PEP), IDQ = 500 mA
Two−Tone Measurement, 100 kHz Tone Spacing
−20
45
ADJACENT CHANNEL POWER RATIO (dB)
η
35
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
0
IRL, INPUT RETURN LOSS (dB)
IMD, INTERMODULATION DISTORTION (dBc)
40
Figure 3. Class AB Broadband Circuit Performance
G ps , POWER GAIN (dB)
Freescale Semiconductor, Inc...
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
Freescale Semiconductor, Inc.
f = 2110 MHz
Zsource
f = 2110 MHz
2170 MHz
Zload
Freescale Semiconductor, Inc...
2170 MHz
Zo = 5 Ω
VDD = 28 V, IDQ = 500 mA, Pout = 60 W PEP
f
MHz
Zsource
Ω
Zload
Ω
2110
2.40 - j0.55
3.07 - j2.05
2140
2.26 - j0.87
2.89 - j2.38
2170
2.08 - j1.23
2.66 - j2.71
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under Test
Input
Matching
Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF21060R3 MRF21060SR3
6
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
Freescale Semiconductor, Inc...
N
M
T A
M
B
M
ccc
M
T A
M
M
aaa
M
T A
M
M
T A
M
B
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
(INSULATOR)
B
M
C
F
E
A
T
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
1
K
2X
2
D
bbb
M
T A
M
B
M
N
M
R
(LID)
ccc
M
T A
M
B
M
M
B
M
ccc
M
T A
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
C
3
E
A
(FLANGE)
MOTOROLA RF DEVICE DATA
T
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−− 0.040
−−− 0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
H
A
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
CASE 465 - 06
ISSUE F
NI - 780
MRF21060R3
4X U
(FLANGE)
B
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
SEATING
PLANE
(FLANGE)
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
CASE 465A - 06
ISSUE F
NI - 780S
MRF21060SR3
F
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7
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MRF21060R3 MRF21060SR3
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MOTOROLA RF DEVICE MRF21060/D
DATA
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