IXYS IXFH17N80Q Hiperfet power mosfets q-class Datasheet

HiPerFETTM
Power MOSFETs
IXFH 17N80Q
IXFT 17N80Q
VDSS
ID25
RDS(on)
Q-Class
= 800 V
=
17 A
= 0.60 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
800
800
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
TC = 25°C
17
A
IDM
TC = 25°C, pulse width limited by TJM
68
A
IAR
TC = 25°C
17
A
EAR
TC = 25°C
30
mJ
EAS
TC = 25°C
1.0
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
5
V/ns
400
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
°C
TO-268 (D3) (IXFT) Case Style
G
(TAB)
S
TO-247 AD (IXFH)
(TAB)
TJ ≤ 150°C, RG = 2 Ω
PD
TC = 25°C
TJ
TJM
Tstg
TL
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque
Weight
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
G = Gate
S = Source
Features
z
z
z
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
Characteristic Values
Min. Typ.
Max.
VDSS
VGS = 0 V, ID = 3 mA
800
VGS(th)
VDS = VGS, ID = 4 mA
2.0
IGSS
VGS = ±20 VDC, VDS = 0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
V
4.5
V
±100
nA
25
1
µA
mA
0.60
Ω
D = Drain
TAB = Drain
z
z
z
IXYS advanced low Qg process
International standard packages
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Fast switching
Molding epoxies meet UL 94 V-0
flammability classification
Advantages
z
z
z
Easy to mount
Space savings
High power density
DS99058A(06/03)
IXFH 17N80Q
IXFT 17N80Q
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs
VDS = 10 V; ID = 0.5 ID25, pulse test
9
17
S
3600
pF
350
pF
C rss
100
pF
td(on)
18
ns
Ciss
Coss
VGS = 0 V, VDS = 25 V, f = 1 MHz
tr
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
27
ns
td(off)
RG = 1.5 Ω (External)
53
ns
tf
16
ns
Qg(on)
95
nC
20
nC
40
nC
Qgs
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCK
0.31
(TO-247)
Source-Drain Diode
0.25
K/W
K/W
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
Test Conditions
IS
VGS = 0 V
15
A
ISM
Repetitive;
60
A
VSD
IF = IS, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
1.5
V
250
ns
µC
A
t rr
QRM
IRM
IF = IS-di/dt = 100 A/µs, VR = 100 V
0.85
8
TO-247 AD Outline
1
2
3
Terminals: 1 - Gate
3 - Source
Dim.
2 - Drain
Tab - Drain
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
IXFH 17N80Q
IXFT 17N80Q
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
18
35
16
30
6V
14
6V
25
12
10
I D - Amperes
I D - Amperes
VGS = 10V
7V
VGS = 10V
5V
8
6
20
15
5V
10
4
5
2
0
0
0
2
4
6
8
10
12
0
5
10
Fig. 3. Output Characteristics
@ 125 Deg. C
18
30
V GS = 10V
2.8
5V
R D S (on) - Normalized
I D - Amperes
25
3.1
14
12
10
8
6
4
2
2.5
2.2
1.9
ID = 17A
1.6
ID = 8.5A
1.3
1
0.7
0
0.4
0
5
10
15
20
25
30
-50
-25
V D S - Volts
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. RDS(on) Norm alized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Tem perature
2.8
18
VGS = 10V
16
2.5
14
TJ = 125ºC
2.2
I D - Amperes
R D S (on) - Normalized
20
Fig. 4. RDS(on) Norm alized to ID25 Value vs.
Junction Tem perature
VGS = 10V
6V
16
15
V D S - Volts
V D S - Volts
1.9
1.6
1.3
10
8
6
4
TJ = 25ºC
1
12
2
0.7
0
0
5
10
15
20
I D - Amperes
© 2003 IXYS All rights reserved
25
30
35
-50
-25
0
25
50
75
100
TC - Degrees Centigrade
125
150
IXFH 17N80Q
IXFT 17N80Q
Fig. 8. Transconductance
Fig. 7. Input Adm ittance
25
40
35
30
g f s - Siemens
I D - Amperes
20
15
10
TJ = 120ºC
25ºC
-40ºC
5
TJ = -40ºC
25ºC
125ºC
25
20
15
10
5
0
0
3
3.5
4
4.5
5
5.5
6
0
5
10
15
V G S - Volts
Fig. 9. Source Current vs. Source-ToDrain Voltage
25
30
35
40
Fig. 10. Gate Charge
50
10
40
VDS = 400V
I D = 8.5A
I G = 10mA
8
VG S - Volts
I S - Amperes
20
I D - Amperes
30
TJ = 125ºC
20
TJ = 25ºC
6
4
2
10
0
0
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
1.2
20
40
60
80
100
Q G - nanoCoulombs
V S D - Volts
Fig. 12. Maxim um Transient Therm al
Resistance
Fig. 11. Capacitance
10000
1
C iss
1000
R (th) J C - (ºC/W)
Capacitance - pF
f = 1MHz
C oss
100
0.1
C rss
10
0.01
0
5
10
15
20
25
30
35
40
V DS - Volts
1
10
100
1000
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343
Similar pages