Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 1/9 CYStech Electronics Corp. N-Channel Enhancement Mode MOSFET MTB095N10KRL3 BVDSS ID @ VGS=10V, TA=25°C Features • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating & Halogen-free package Equivalent Circuit 100V RDSON@VGS=10V, ID=2A RDSON@VGS=4.5V, ID=2A 3.3A 107mΩ (typ.) 127mΩ (typ.) Outline MTB095N10KRL3 SOT-223 D G：Gate D：Drain S：Source D S G Ordering Information Device MTB095N10KRL3-0-T3-G Package SOT-223 (Pb-free lead plating & Halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB095N10KRL3 Preliminary CYStek Product Specification Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=70°C, VGS=10V Pulsed Drain Current *1 Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=6A, VDD=50V *2 Repetitive Avalanche Energy @ L=0.05mH Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=70℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS 100 ±20 3.3 2.6 16 6 18 0.625 2.5 1.6 -55~+150 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C *2. Guaranteed by design, not by 100% test. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol RθJC RθJA Value 18.5 50 (Note) Unit °C/W 2 Note : When mounted on a 1 in pad of 2 oz. copper. Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 MTB095N10KRL3 Min. Typ. Max. 100 1.2 - 2.9 107 127 2.6 ±10 1 25 140 180 - 6.7 1.1 1.6 5.2 16.6 17 5.2 10 1.7 2.4 7.8 24.9 25.5 7.8 Unit V S μA mΩ Test Conditions VGS=0V, ID=250μA VDS =VGS, ID=250μA VDS =10V, ID=1A VGS=±16V, VDS=0V VDS =80V, VGS =0V VDS =80V, VGS =0V, Tj=125°C VGS =10V, ID=2A VGS =4.5V, ID=2A nC VDS=80V, VGS=10V, ID=2A ns VDS=50V, ID=2A, VGS=10V, RG=1Ω Preliminary CYStek Product Specification CYStech Electronics Corp. Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr - 301 29 8 452 44 12 - 0.88 18.3 9.8 3.3 16 1.2 - pF Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 3/9 VGS=0V, VDS=50V, f=1MHz A V ns nC IS=2A, VGS=0V IF=2A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended soldering footprint MTB095N10KRL3 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Junction Temperature Typical Output Characteristics 1.4 ID, Drain Current (A) 14 BVDSS, Normalized Drain-Source Breakdown Voltage 16 10V,9V,8V,7V,6V,5V,4.5V 12 4V 10 8 3.5V 6 4 VGS=3V 1.3 1.2 1.1 1 0.9 0.8 2 0.7 0 0.6 0 2 4 6 8 VDS, Drain-Source Voltage(V) -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1000 R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1.2 VSD, Source-Drain Voltage(V) VGS=4.5V 10V 100 Tj=25°C VGS=0V 1 0.8 Tj=150°C 0.6 0.4 0.2 10 0.01 0.1 1 ID, Drain Current(A) 0 10 R DS(ON), NormalizedStatic Drain-Source On-State Resistance 350 300 2 4 6 IDR, Reverse Drain Current(A) 8 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON), Static Drain-Source OnState Resistance(mΩ) ID=250μA, VGS=0V ID=2A 250 200 150 100 50 2.4 2 VGS=10V, ID=2A 1.6 1.2 0.8 RDSON@Tj=25°C : 107mΩ typ. 0.4 0 0 0 MTB095N10KRL3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -75 -50 -25 Preliminary 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th) , Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss 10 Crss 1.5 1.3 ID=1mA 1.1 0.9 0.7 ID=250μA 0.5 1 0 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage(V) 45 -75 -50 -25 50 50 75 100 125 150 175 Gate Charge Characteristics 10 10 VDS=10V VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 Tj, Junction Temperature(°C) Forward Transfer Admittance vs Drain Current 1 VDS=15V 0.1 Pulsed Ta=25°C VDS=50V 8 VDS=80V 6 4 2 ID=2A 0 0.01 0.001 0.01 0.1 ID, Drain Current(A) 1 0 10 2 4 6 Qg, Total Gate Charge(nC) 8 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 4 100 ID, Maximum Drain Current(A) RDS(ON) Limited 10 ID, Drain Current(A) 0 10 μs 1 100μs 1ms 0.1 10ms TA=25°C, Tj=150°C, RθJA=50°C/W, Single Pulse 0.01 100ms DC 3.5 3 2.5 2 1.5 1 VGS=10V, RθJA=50°C/W 0.5 0 0.001 0.01 MTB095N10KRL3 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 Preliminary 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 16 50 VDS=10V 14 TJ(MAX) =150°C TA=25°C RθJA=50°C/W 40 12 10 Power (W) ID, Drain Current (A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 8 6 30 20 4 10 2 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0 0.0001 0.001 0.01 0.1 Pulse Width(s) 1 10 Transient Thermal Response Curves r(t), Normalized Effective Transient Thermal Resistance 1 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=50°C/W 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1.E-05 Single Pulse 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTB095N10KRL3 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB095N10KRL3 Preliminary CYStek Product Specification CYStech Electronics Corp. Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 8/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note :1. All temperatures refer to topside of the package, measured on the package body surface. 2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care should be taken to match the coefficients of thermal expansion between components and PCB. If they are not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly cools. MTB095N10KRL3 Preliminary CYStek Product Specification Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 9/9 CYStech Electronics Corp. SOT-223 Dimension A Marking: B095N 10KR □□□□ Device Name B C 1 2 Date Code 3 1 D E F H G 2 3 Style: Pin 1.Gate 2.Drain 3.Source a1 I 3-Lead SOT-223 Plastic Surface Mounted Package CYStek Package Code: L3 a2 *: Typical Inches Min. Max. 0.1142 0.1220 0.2638 0.2874 0.1299 0.1457 0.0236 0.0315 *0.0906 0.2480 0.2638 DIM A B C D E F Millimeters Min. Max. 2.90 3.10 6.70 7.30 3.30 3.70 0.60 0.80 *2.30 6.30 6.70 DIM G H I a1 a2 Inches Min. Max. 0.0551 0.0709 0.0098 0.0138 0.0008 0.0039 *13o 0o 10 o Millimeters Min. Max. 1.40 1.80 0.25 0.35 0.02 0.10 *13o 0o 10 o Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB095N10KRL3 Preliminary CYStek Product Specification