PHILIPS BCY59VIII Npn switching transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BCY58; BCY59
NPN switching transistors
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jun 17
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to case
• Switching and amplification.
DESCRIPTION
3
handbook, halfpage
1
2
NPN switching transistor in a TO-18 metal package.
PNP complements: BCY78 and BCY79.
2
3
MAM264
1
Fig.1 Simplified outline (TO-18) and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
TYP.
MAX.
UNIT
open emitter
−
−
32
V
−
−
45
V
BCY58
−
−
32
V
BCY59
−
−
45
V
−
−
100
mA
Tamb ≤ 45 °C
−
−
340
mW
Tcase ≤ 45 °C
−
−
1
W
120
170
220
BCY58
BCY59
VCEO
MIN.
collector-emitter voltage
IC
collector current (DC)
Ptot
total power dissipation
hFE
DC current gain
open base
IC = 2 mA; VCE = 5 V
BCY58/VII; BCY59/VII
BCY58/VIII; BCY59/VIII
180
250
310
BCY58/IX; BCY59/IX
250
350
460
BCY58/X; BCY59/X
380
500
630
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
150
−
−
MHz
toff
turn-off time
ICon = 10 mA; IBon = 1 mA; IBoff = −1 mA
−
480
800
ns
ICon = 100 mA; IBon = 10 mA; IBoff = −10 mA −
450
800
ns
1997 Jun 17
2
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
PARAMETER
CONDITIONS
collector-base voltage
MIN.
MAX.
UNIT
open emitter
BCY58
−
32
V
BCY59
−
45
V
BCY58
−
32
V
BCY59
−
45
V
−
7
V
collector-emitter voltage
open base
VEBO
emitter-base voltage
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
Tamb ≤ 45 °C
−
340
mW
Tcase ≤ 45 °C
−
1
W
°C
open collector
Tstg
storage temperature
−65
+150
Tj
junction temperature
−
200
°C
Tamb
operating ambient temperature
−65
+150
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
450
K/W
Rth j-c
thermal resistance from junction to case
150
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
TYP.
MAX.
UNIT
IE = 0; VCB = 32 V
−
−
10
nA
IE = 0; VCB = 32 V; Tj = 150 °C
−
−
10
µA
IE = 0; VCB = 45 V
−
−
10
nA
IE = 0; VCB = 45 V; Tj = 150 °C
−
−
10
µA
−
−
10
nA
BCY58/VII; BCY59/VII
−
20
−
BCY58/VIII; BCY59/VIII
20
95
−
BCY58/IX; BCY59/IX
40
190
−
BCY58/X; BCY59/X
100
300
−
collector cut-off current
BCY59
IEBO
emitter cut-off current
IC = 0; VEB = 5 V
hFE
DC current gain
IC = 10 µA; VCE = 5 V
1997 Jun 17
MIN.
collector cut-off current
BCY58
ICBO
CONDITIONS
3
Philips Semiconductors
Product specification
NPN switching transistors
SYMBOL
hFE
BCY58; BCY59
PARAMETER
DC current gain
CONDITIONS
hFE
VBEsat
MAX.
BCY58/VII; BCY59/VII
120
170
220
BCY58/VIII; BCY59/VIII
180
250
310
BCY58/IX; BCY59/IX
250
350
460
380
500
630
BCY58/VII; BCY59/VII
80
250
−
BCY58/VIII; BCY59/VIII
120
300
400
BCY58/IX; BCY59/IX
160
390
630
BCY58/X; BCY59/X
240
550
1000
BCY58/VII; BCY59/VII
40
−
−
BCY58/VIII; BCY59/VIII
45
−
−
BCY58/IX; BCY59/IX
60
−
−
DC current gain
DC current gain
IC = 100 mA; VCE = 1 V
60
−
−
50
100
350
mV
IC = 100 mA; IB = 2.5 mA
150
250
700
mV
collector-emitter saturation voltage IC = 10 mA; IB = 0.25 mA
base-emitter saturation voltage
UNIT
IC = 10 mA; VCE = 1 V
BCY58/X; BCY59/X
VCEsat
TYP.
IC = 2 mA; VCE = 5 V
BCY58/X; BCY59/X
hFE
MIN.
IC = 10 mA; IB = 0.25 mA
600
700
850
mV
IC = 100 mA; IB = 2.5 mA
750
875
1200
mV
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
−
5
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
−
15
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V; f = 100 MHz
150
−
−
MHz
F
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
10
dB
−
85
150
ns
−
35
−
ns
−
ns
Switching times (between 10% and 90% levels)
ton
turn-on time
td
delay time
tr
rise time
−
50
ICon = 10 mA; IBon = 1 mA;
IBoff = −1 mA
toff
turn-off time
−
480
800
ns
ts
storage time
−
400
−
ns
tf
fall time
−
80
−
ns
ton
turn-on time
td
delay time
tr
−
55
150
ns
−
5
−
ns
rise time
−
50
−
ns
ICon = 100 mA; IBon = 10 mA;
IBoff = −10 mA
toff
turn-off time
−
450
800
ns
ts
storage time
−
250
−
ns
tf
fall time
−
200
−
ns
1997 Jun 17
4
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
α
j
seating plane
B
w M A M B M
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D1
j
k
L
w
α
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45°
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 Jun 17
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
5
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Jun 17
6
Philips Semiconductors
Product specification
NPN switching transistors
BCY58; BCY59
NOTES
1997 Jun 17
7
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SCA54
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Date of release: 1997 Jun 17
Document order number:
9397 750 02162
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