Infineon BTS432I2 Smart highside power switch Datasheet

PROFET® BTS 432 I2
Smart Highside Power Switch
Features
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Product Summary
Load dump and reverse battery protection1)
VLoad dump
Clamp of negative voltage at output
Vbb-VOUT Avalanche
Short-circuit protection
Vbb (operation)
Current limitation
Vbb (reverse)
Thermal shutdown
RON
Diagnostic feedback
Open load detection in OFF-state
IL(SCp)
CMOS compatible input
IL(SCr)
Electrostatic discharge (ESD) protection
IL(ISO)
Loss of ground and loss of Vbb protection2)
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-restart and
hysteresis
Application
Clamp
80
58
4.5 ... 42
-32
38
42
33
11
V
V
V
V
mΩ
A
A
A
5
5
• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits
1
Standard
SMD
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS chip on chip technology. Fully protected by embedded protection
functions.
R bb
+ Vbb
Voltage
Overvoltage
Current
Gate
source
protection
limit
protection
3
V Logic
2
Voltage
Charge pump
sensor
Level shifter
Limit for
unclamped
ind. loads
Rectifier
IN
OUT
5
Temperature
sensor
Open load
ESD
4
Logic
Load
detection
ST
Short circuit
detection
GND

PROFET
1
Signal GND
1)
2)
Load GND
No external components required, reverse load current limited by connected load.
Additional external diode required for charged inductive loads
Infineon Technologies AG
Page 1 of 15
1999-02-19
BTS 432 I2
Pin
Symbol
Function
1
GND
-
Logic ground
2
IN
I
Input, activates the power switch in case of logical high signal
3
Vbb
+
Positive power supply voltage,
the tab is shorted to this pin
4
ST
S
Diagnostic feedback, low on failure
5
OUT
(Load, L)
O
Output to the load
Maximum Ratings at T j = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 1.1 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
Symbol
Vbb
Vs 3)
Values
IL
Tj
Tstg
Ptot
self-limited
-40 ...+150
-55 ...+150
125
A
°C
1.7
2.0
J
kV
-0.5 ... +6
±5.0
±5.0
V
mA
≤1
≤ 75
≤ tbd
K/W
EAS
VESD
VIN
IIN
IST
63
66.5
Unit
V
V
W
see internal circuit diagrams page 6...
Thermal resistance
3)
4)
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on pcb4):
VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 2
1999-02-19
BTS 432 I2
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = 25 °C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
Tj=25 °C: RON
--
30
38
mΩ
IL(ISO)
9
55
11
70
--
A
IL(GNDhigh)
--
--
1
mA
ton
toff
50
10
160
--
300
80
µs
dV /dton
0.4
--
2.5
V/µs
-dV/dtoff
1
--
5
V/µs
4.5
2.4
---
---6.5
42
4.5
4.5
7.5
V
V
V
V
∆Vbb(under)
--
0.2
--
V
Vbb(over)
Vbb(o rst)
∆Vbb(over)
Vbb(AZ)
42
42
-60
63
--0.2
-67
52
----
V
V
V
V
Tj=150 °C:
Nominal load current (pin 3 to 5)
ISO Proposal: VON = 0.5 V, TC = 85 °C
Output current (pin 5) while GND disconnected or
GND pulled up, V IN = 0, see diagram page 7,
Tj =-40...+150°C
Turn-on time
to 90% VOUT:
Turn-off time
to 10% VOUT:
RL = 12 Ω , Tj =-40...+150°C
Slew rate on
10 to 30% VOUT, RL = 12 Ω , Tj =-40...+150°C
Slew rate off
70 to 40% VOUT, RL = 12 Ω , Tj =-40...+150°C
Operating Parameters
Operating voltage 5)
Tj =-40...+150°C:
Undervoltage shutdown
Tj =-40...+150°C:
Undervoltage restart
Tj =-40...+150°C:
Undervoltage restart of charge pump
see diagram page 12
Tj =-40...+150°C:
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
Overvoltage shutdown
Tj =-40...+150°C:
Overvoltage restart
Tj =-40...+150°C:
Overvoltage hysteresis
Tj =-40...+150°C:
Overvoltage protection6)
Tj =-40°C:
Ibb=40 mA
Tj =25...+150°C:
Standby current (pin 3)
VIN =0, IST=0,
Tj=-40...+25°C :
Tj=150°C:
Operating current (Pin 1)7), VIN =5 V
5)
6)
7)
Vbb(on)
Vbb(under)
Vbb(u rst)
Vbb(ucp)
µA
Ibb(off)
IGND
---
40
50
70
110
--
1.1
--
mA
At supply voltage increase up to Vbb= 6.5 V typ without charge pump, VOUT ≈Vbb - 2 V
see also VON(CL) in table of protection functions and circuit diagram page 7. Meassured without load.
Add IST , if IST > 0, add IIN, if VIN>5.5 V
Infineon Technologies AG
Page 3
1999-02-19
BTS 432 I2
Protection Functions
Initial peak short circuit current limit (pin 3 to 5)8),
IL(SCp)
( max 400 µs if V ON > V ON(SC) )
Tj =-40°C:
Tj =25°C:
Tj =+150°C:
Repetitive short circuit current limit
IL(SCr)
Tj = Tjt (see timing diagrams, page 10)
Short circuit shutdown delay after input pos. slope
VON > VON(SC),
Tj =-40..+150°C: td(SC)
--22
-42
--
72
---
A
20
33
--
A
80
--
400
µs
VON(CL)
--
58
--
V
VON(SC)
Tjt
∆Tjt
EAS
ELoad12
ELoad24
-150
---
8.3
-10
--
---1.7
1.3
1.0
V
°C
K
J
Integrated resistor in V bb line
-Vbb
Rbb
---
-120
32
--
V
Ω
Diagnostic Characteristics
Open load detection current
IL(off)
10
30
60
µA
2
3
4
V
min value valid only, if input "low" time exceeds 30 µs
Output clamp (inductive load switch off)
at V OUT = V bb - V ON(CL), IL= 30 mA
Short circuit shutdown detection voltage
(pin 3 to 5)
Thermal overload trip temperature
Thermal hysteresis
Inductive load switch-off energy dissipation9),
Tj Start = 150 °C, single pulse
Vbb = 12 V:
Vbb = 24 V:
Reverse battery (pin 3 to 1) 10)
Open load detection voltage
Tj=-40..150°C:
VOUT(OL)
)
Short circuit current limit for max. duration of 400 µs, prior to shutdown (see td(SC) page 4)
While demagnetizing load inductance, dissipated energy in PROFET is EAS= ∫ VON(CL) * iL (t) dt, approx.
VON(CL)
2
EAS= 1/2 * L * IL * (
), see diagram page 8
VON(CL) - Vbb
10) Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Reverse
current IGND of ≈ 0.3 A at Vbb= -32 V through the logic heats up the device. Time allowed under these
condition is dependent on the size of the heatsink. Reverse IGND can be reduced by an additional external
GND-resistor (150 Ω). Input and Status currents have to be limited (see max. ratings page 2 and circuit page
7).
9)
Infineon Technologies AG
Page 4
1999-02-19
BTS 432 I2
Input and Status Feedback11)
Input turn-on threshold voltage
VIN(T+)
1.5
--
2.4
V
VIN(T-)
1.0
--
--
V
-1
0.5
--
-30
V
µA
10
25
50
µA
td(ST OL3)
40
--
300
µs
td(ST SC)
80
200
400
µs
VST(high)12)
VST(low)
-IST
+IST13)
4.4
----
5.1
----
6.5
0.4
0.25
1.6
V
Tj =-40..+150°C:
Input turn-off threshold voltage
Tj =-40..+150°C:
Input threshold hysteresis
Off state input current (pin 2)
∆ VIN(T)
VIN = 0.4 V: IIN(off)
On state input current (pin 2)
VIN = 3.5 V: IIN(on)
Delay time for status with open load
after Input neg. slope (see diagram page 12)
Status invalid after positive input slope
(short circuit)
Tj=-40 ... +150°C:
Status output (CMOS)
Tj =-40...+150°C, IST= - 50 µA:
Tj =-40...+150°C, IST = +1.6 mA:
Max. status current for
current source (out):
valid status output,
current sink (in) :
Tj =-40...+150°C
mA
11) If a ground resistor R
GND is used, add the voltage drop across this resistor.
12) V
≈
V
during
undervoltage shutdown
St high
bb
13) No current sink capability during undervoltage shutdown
Infineon Technologies AG
Page 5
1999-02-19
BTS 432 I2
Truth Table
Input-
Output
level
level
432
D2
432
E2/F2
432
I2
Normal
operation
Open load
L
H
L
H
L
H
H
H
H
L
H
H
H
L
H
H
L
H
Short circuit
to GND
Short circuit
to Vbb
Overtemperature
Undervoltage
L
H
L
H
L
H
L
H
L
H
H
L
H
H (L15))
L
L
H
L
H
H (L15))
L
L
H
H
H
H
H
L
L
H
L
L
Overvoltage
Status
14)
H
L
L
H
H
L
L
L
L
L
L
L16)
L16)
L
L
L16)
L16)
L
L
L = "Low" Level
H = "High" Level
Terms
Status output
Ibb
VLogic
3
I IN
Vbb
IN
ST
2
IL
V
VST
IN
OUT
PROFET
I ST
4
VON
5
ST
GND
GND
V
bb
1
R
IGND
VOUT
GND
ESDZD
Zener diode: 6.1 V typ., max 5 mA, VLogic 5 V typ,
ESD zener diodes are not designed for continuous
current
Short Circuit detection
Fault Condition: VON > 8.3 V typ.; IN high
Input circuit (ESD protection)
R
IN
+ V bb
I
ESDZDI1 ZDI2
V
ON
I
I
OUT
GND
ZDI1 6.1 V typ., ESD zener diodes are not designed for
continuous current
Logic
unit
Short circuit
detection
14) Power Transistor off, high impedance
15) Low resistance short V to output may be detected by no-load-detection
bb
16) No current sink capability during undervoltage shutdown
Infineon Technologies AG
Page 6
1999-02-19
BTS 432 I2
Inductive and overvoltage output clamp
GND disconnect
+ V bb
V
Z
3
V
ON
Vbb
IN
2
PROFET
OUT
OUT
4
GND
V
VON clamped to 58 V typ.
Overvolt. and reverse batt. protection
GND
1
IN V ST
VGND
Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) .
Due to VGND >0, no VST = low signal available.
+ V bb
R IN
bb
V
5
ST
GND disconnect with GND pull up
R bb
VZ
3
IN
Logic
V
R ST ST
2
IN
Vbb
OUT
PROFET
GND
PROFET
4
OUT
5
ST
GND
RGND
1
Signal GND
Rbb = 120 Ω typ., VZ +Rbb *40 mA = 67 V typ., add
RGND, RIN , RST for extended protection
V
V
bb
V
IN ST
V
GND
Any kind of load. If VGND > VIN - VIN(T+) device stays off
Due to VGND >0, no VST = low signal available.
Open-load detection
OFF-state diagnostic condition: VOUT > 3 V typ.; IN low
Vbb disconnect with charged inductive
load
3
high
2
OFF
I
Vbb
PROFET
L(OL)
4
Logic
unit
IN
Open load
detection
V
OUT
5
ST
GND
1
OUT
V
bb
Signal GND
Infineon Technologies AG
Page 7
1999-02-19
BTS 432 I2
Inductive Load switch-off energy
dissipation
3
high
2
IN
E AS
PROFET
4
E bb
Vbb
OUT
5
E
ST
IN
GND
1
PROFET
=
V
V bb
bb
ST
GND
Load
OUT
EL
ER
Energy dissipated in PROFET EAS = Ebb + EL - ER.
2
ELoad < EL, EL = 1/2 * L * I L
Infineon Technologies AG
Page 8
1999-02-19
BTS 432 I2
Options Overview
all versions: High-side switch, Input protection, ESD protection, load dump and
reverse battery protection , protection against loss of ground
Type
Logic version
BTS 432D2 432E2 432F2 432I2
Overtemperature protection
Tj >150 °C, latch function17)18)
Tj >150 °C, with auto-restart on cooling
Short-circuit to GND protection
switches off when VON>8.3 V typ. 17)
(when first turned on after approx. 200 µs)
D
E
X
F
I
X
X
X
X
X
X
X
Open load detection
in OFF-state with sensing current 30 µA typ.
in ON-state with sensing voltage drop across
power transistor
X
X
X
X
Undervoltage shutdown with auto restart
X
X
X
X
Overvoltage shutdown with auto restart
X
X
X
X
X
X
X
X
Status feedback for
overtemperature
short circuit to GND
X
X
X
X
-19)
-19)
-19)
X
open load
X
X
X
X
undervoltage
X
-
-
X
overvoltage
X
-
-
X
short to Vbb
Status output type
CMOS
X
X
X
X
X
X
X
X
X
Open drain
Output negative voltage transient limit
(fast inductive load switch off)
to Vbb - VON(CL)
X
Load current limit
high level (can handle loads with high inrush currents)
X
medium level
X
low level (better protection of application)
17) Latch except when V -V
bb OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT
≠ 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch
between turn on and td(SC).
18) With latch function. Reseted by a) Input low, b) Undervoltage, c) Overvoltage
19) Low resistance short V to output may be detected by no-load-detection
bb
Infineon Technologies AG
Page 9
1999-02-19
BTS 432 I2
Timing diagrams
Figure 2b: Switching an inductive load
Figure 1a: Vbb turn on:
IN
IN
t d(bb IN)
V
bb
ST
V
OUT
V
OUT
A
ST CMOS
I
L
t
A
t
in case of too early VIN=high the device may not turn on (curve
A)
td(bb IN) approx. 150 µs
Figure 3a: Turn on into short circuit,
Figure 2a: Switching a lamp,
IN
IN
ST
ST
V
OUT
VOUT
td(SC)
I
I
L
L
t
t
td(SC) approx. 200µs if Vbb - VOUT > 8.3 V typ.
Infineon Technologies AG
Page 10
1999-02-19
BTS 432 I2
Figure 3b: Turn on into overload,
Figure 4a: Overtemperature,
Reset if (IN=low) and (Tj<Tjt)
IN
IN
IL
ST
I L(SCp)
I L(SCr)
V
ST
OUT
T
J
t
t
Heating up may require several milliseconds , Vbb - VOUT < 8.3 V
typ.
*) ST goes high , when VIN=low and Tj<T jt
Figure 3c: Short circuit while on:
Figure 5a: Open load: detection in ON-state, open
load occurs in on-state
IN
IN
ST
t
d(ST OL1)
t d(OL ST2)
ST
V OUT
V
OUT
IL
**)
normal
I
open
normal
L
t
**) current peak approx. 20 µs
t
td(ST OL1) = tbd µs typ., td(ST OL2) = tbd µs typ
Infineon Technologies AG
Page 11
1999-02-19
BTS 432 I2
Figure 5b: Open load: detection in OFF-state, turn
on/off to open load
Figure 6a: Undervoltage:
IN
IN
Vbb
td(ST OL3)
ST
Vbb(u cp)
Vbb(u rst)
V
bb(under)
VOUT
V OUT
I
L
ST CMOS
normal
open
t
*)
in case of external capacity td(ST,OL3) may be higher due to high
impedance
*) IL = 30 µA typ
t
Figure 6b: Undervoltage restart of charge pump
VON [V]
VON(CL)
V on
Figure 5c: Open load: detection in OFF-state, open
load occurs in off-state
off
IN
ST
V
off
V
V
V
bb(u rst)
OUT
V
V
I
L
normal
load
open
load
bb(under)
bb(over)
bb(o rst)
bb(u cp)
on
normal
load
V bb
Vbb [V]
*)
*)
t
charge pump starts at Vbb(ucp) =6.5 V typ.
*) IL = 30 µA typ
Infineon Technologies AG
Page 12
1999-02-19
BTS 432 I2
Figure 7a: Overvoltage:
IN
Vbb
V
V
ON(CL)
Vbb(over)
V
bb(o rst)
OUT
ST
t
Infineon Technologies AG
Page 13
1999-02-19
BTS 432 I2
Package and Ordering Code
All dimensions in mm
Standard TO-220AB/5
BTS 432 I2
Infineon Technologies AG
SMD TO-220AB/5, Opt. E3122 Ordering code
Ordering code
Q67060-S6204-A2
BTS 432 I2 E3122A T&R:
Page 14
Q67060-S6204-A3
1999-02-19
BTS 432 I2
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 Infineon Technologies AG 2002. All Rights Reserved
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affect its safety or effectiveness of that device or system.
21) Life support devices or systems are intended (a) to be
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1999-02-19
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