BCP51 -1A , -45V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-223 Collector-Emitter Voltage:VCEO= -45V Complementary types: BCP54 (NPN) A M CLASSIFICATION OF hFE (2) Product-Rank BCP51-16 Range 100~250 4 Top View CB 1 2 K L 3 E PACKAGE INFORMATION D Package MPQ Leader Size SOT-223 2.5K 13’ inch Collector F G H J 2 4 Millimeter Min. Max. 6.20 6.70 6.70 7.30 3.30 3.70 1.42 1.90 4.50 4.70 0.60 0.82 REF. A B C D E F 1 Base 3 Emitter REF. G H J K L M Millimeter Min. Max. 0.10 0.25 0.35 2.30 REF. 2.90 3.10 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Symbol Ratings Unit Collector-Base Voltage VCBO -45 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1 A Collector Power Dissipation PD 1.5 W Junction Temperature Tj 150 °C Parameter ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Max. Unit Collector-base breakdown voltage V(BR)CBO -45 - V IC= -0.1mA , IE=0 Collector-emitter breakdown voltage V(BR)CEO -45 - V IC= -10mA, IB=0 Emitter-base breakdown voltage V(BR)EBO -5 - V IE= -10µA, IC=0 ICBO - -100 nA VCB= -30V, IE=0 hFE (1) 25 - hFE (2) 100 250 VCE= -2V, IC= -150mA hFE (3) 25 - VCE= -2V, IC= -500mA VCE(sat) - -0.5 V IC= -500mA, IB= -50mA VBE(on) - -1 V VCE= -2V, IC= -500mA fT 100 - MHz Collector cut-off current DC current gain 1 Collector-emitter saturation voltage Base-emitter voltage Transition frequency 1 1 Test Conditions VCE= -2V, IC= -5mA VCE= -10V, IC= -50mA, f=100MHz Note: 1. Pulse Test: Pulse Width≦380us, Duty Cycle≦2%. http://www.SeCoSGmbH.com/ 11-Aug-2014 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 BCP51 Elektronische Bauelemente -1A , -45V PNP Silicon Medium Power Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 11-Aug-2014 Rev. A Any changes of specification will not be informed individually. Page 2 of 2