IXYS DSEP8-02A Hiperfred epitaxial diode with soft recovery Datasheet

DSEP 8-02A
HiPerFREDTM Epitaxial Diode
IFAV = 8 A
VRRM = 200 V
trr
= 25 ns
with soft recovery
Preliminary Data
VRSM
VRRM
V
V
200
200
Type
A
C
TO-220 AC
C
DSEP 8-02A
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
Test Conditions
IFRMS
IFAVM
TC = 150°C; rectangular, d = 0.5
35
8
A
A
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
80
A
EAS
TVJ = 25°C; non-repetitive
IAS = 2 A; L = 180 µH
0.5
mJ
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.2
A
-55...+175
175
-55...+150
°C
°C
°C
60
W
IAR
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque
Weight
typical
Maximum Ratings
Features
●
●
0.4...0.6
2
Nm
●
●
●
●
●
Applications
g
●
●
Symbol
IR
①
VF ②
Test Conditions
Characteristic Values
typ.
max.
50
0.2
mA
mA
0.94
1.30
V
V
2.5
0.5
K/W
K/W
25
ns
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 8 A;
TVJ = 150°C
TVJ = 25°C
●
●
●
●
●
●
RthJC
RthCH
trr
IF = 1 A; -di/dt = 50 A/ms;
VR = 30 V; TVJ = 25°C
IRM
VR = 100 V; IF = 10 A; -diF/dt = 100 A/ms
TVJ = 100°C
A
●
●
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Advantages
●
4.1
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low
EMI/RFI
Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
008
Data according to IEC 60747 and per diode unless otherwise specified
1-1
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