Diotec BF722 Surface mount si-epitaxial planartransistor Datasheet

BF 720, BF 722
High Voltage Transistors
Surface mount Si-Epitaxial PlanarTransistors
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
NPN
Power dissipation – Verlustleistung
±0.2
6.5
±0.1
3
1.65
2.3
2
±0.2
3.5
±0.3
7
0.7
1.5 W
Plastic case
Kunststoffgehäuse
4
1
NPN
3
3.25
Dimensions / Maße in mm
1 = B 2, 4 = C 3 = E
SOT-223
Weight approx. – Gewicht ca.
0.04 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C)
Grenzwerte (TA = 25/C)
BF 720
BF 722
Collector-Emitter-voltage
B open
VCE0
300 V
250 V
Collector-Base-voltage
E open
VCB0
300 V
250 V
Emitter-Base-voltage
C open
VEB0
5V
Power dissipation – Verlustleistung
Ptot
1.5 W 1)
Collector current – Kollektorstrom (dc)
IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
ICM
200 mA
Peak Base current – Basis-Spitzenstrom
IBM
100 mA
Junction temperature – Sperrschichttemperatur
Tj
150/C
Storage temperature – Lagerungstemperatur
TS
- 65…+ 150/C
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 200 V
ICB0
–
–
10 nA
IE = 0, VCB = 200 V, Tj = 150/C
ICB0
–
–
10 :A
IEB0
–
–
50 nA
–
–
600 mV
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 5 V
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 30 mA, IB = 5 mA
1
VCEsat
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
10
01.11.2003
High Voltage Transistors
BF 820, BF 822
Characteristics (Tj = 25/C)
Kennwerte (Tj = 25/C)
Min.
Typ.
Max.
hFE
50
–
–
fT
50 MHz
–
–
–
–
1.6 pF
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 20 V, IC = 25 mA
Gain-Bandwidth Product – Transitfrequenz
VCE = 20 V, IC = 25 mA, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 30 V, IE = ie = 0, f = 1 MHz
CCB0
Thermal resistance – Wärmewiderstand
junction to ambient air – Sperrschicht zu umgebender Luft
RthA
87 K/W 2)
junction to soldering point – Sperrschicht zu Lötpad
RthS
27 K/W
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
BF 721, BF 723
) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
01.11.2003
1
2
11
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