2N5401 Semiconductor PNP Silicon Transistor Description • General purpose amplifier • High voltage application Features • High collector breakdown voltage : VCBO = -160V, VCEO = -150V • Low collector saturation voltage : VCE(sat)=-0.5V(MAX.) • Complementary pair with 2N5551 Ordering Information Type NO. Marking 2N5401 2N5401 Package Code TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 4.5±0.1 2.25±0.1 2.06±0.1 14.0±0.40 0.4±0.02 1.27 Typ. 2.54 Typ. PIN Connections 1. Emitter 2. Base 3. Collector 0.38 1.20±0.1 1 2 3 KST-9040-000 1 2N5401 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -160 V Collector-Emitter voltage VCEO -150 V Emitter-Base voltage VEBO -5 V Collector current IC -600 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics Characteristic (Ta=25°C) Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-100µA, IE=0 -160 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -150 - - V Emitter-Base breakdown voltage BVEBO IE=-10µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-120V, IE=0 - - -100 nA Emitter cut-off current IEBO VEB=-3V, IC=0 - - -100 nA DC current gain hFE (1) VCE=-5V, IC=-1mA 50 - DC current gain hFE (2) VCE=-5V, IC=-10mA 60 - DC current gain hFE (3) 240 - VCE=-5V, IC=-50mA 50 - Collector-Emitter saturation voltage * VCE(sat)(1) IC=-10mA, IB=-1mA - - -0.2 V Collector-Emitter saturation voltage VCE(sat)(2)* IC=-50mA, IB=-5mA - - -0.5 V Base-Emitter saturation voltage * VBE(sat)(1) IC=-10mA, IB=-1mA - - -1 V Base-Emitter saturation voltage VBE(sat)(2)* IC=-50mA, IB=-5mA - - -1 V fT VCE=-10V, IC=-10mA 100 - 400 MHz - - 6 pF Transition frequency Collector output capacitance * Cob VCB=-10V, IE=0, f=1MHz - : Pulse Tester : Pulse Width ≤300µs, Duty Cycle ≤2.0% KST-9040-000 2 2N5401 Electrical Characteristic Curves Fig. 1 PC-Ta Fig. 2 IC - VBE Fig. 3 fT - IC Fig. 4 VCE(sat), VBE(sat) - IC Fig. 5 Cob - VCB KST-9040-000 3