Panasonic MA4X746 Silicon epitaxial planar type Datasheet

Schottky Barrier Diodes (SBD)
MA4X746
Silicon epitaxial planar type
Unit : mm
For super-high speed switching circuit
For small current rectification
+ 0.2
2.8 − 0.3
+ 0.25
0.4 − 0.05
2
+ 0.1
3
Symbol
Rating
Unit
VR
50
V
Repetitive peak reverse voltage
VRRM
50
V
Non repetitive peak
IFSM
1
A
Reverse voltage (DC)
forward
Peak forward
current
Average forward
current
Single
Double*1
Single
300
Double*1
Single
+ 0.1
0.16 − 0.06
0.4 ± 0.2
0.75
IFM
0 to 0.1
0.1 to 0.3
Parameter
0.6 − 0
0.2
0.8
+ 0.2
1.1 − 0.1
■ Absolute Maximum Ratings Ta = 25°C
2
current*
+ 0.1
1
0.5
0.95
0.95
+ 0.2
2.9 − 0.05
• IF(AV) = 200 mA, and VR > 50 V is achieved
• Allowing automatic insertion with the emboss taping
• Optimum for high-frequency rectification because of its short
reverse recovery time (trr)
• High rectification efficiency caused by its low forward-risevoltage (VF)
1.9 ± 0.2
0.5 R
4
+ 0.1
■ Features
0.65 ± 0.15
1.5 − 0.05
0.4 − 0.05
1.45
0.65 ± 0.15
1 : Cathode 1
2 : Cathode 2
3 : Anode 2
4 : Anode 1
Mini Type Package (4-pin)
Marking Symbol: M3M
mA
Internal Connection
225
IF(AV)
200
Double*1
mA
4
1
3
2
150
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) *1 : Value per chip
*2 : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)
■ Electrical Characteristics Ta = 25°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Reverse current (DC)
IR
VR = 50 V
200
µA
Forward voltage (DC)
VF1
IF = 30 mA
0.36
V
VF2
IF = 200 mA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
30
0.55
pF
V
Reverse recovery time*
trr
IF = IR = 100 mA
Irr = 10 mA, RL = 100 Ω
3.0
ns
Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a
human body and the leakage of current from the operating equipment.
2. Rated input/output frequency: 2 000 MHz
Bias Application Unit N-50BU
Input Pulse
Output Pulse
3. * : trr measuring instrument
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
W.F.Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
t
IF
trr
t
Irr = 10 mA
IF = 100 mA
IR = 100 mA
RL = 100 Ω
1
MA4X746
Schottky Barrier Diodes (SBD)
IF  V F
IR  VR
VF  Ta
103
105
0.5
Ta = 150°C
IF = 200 mA
25°C
1
10−1
10−2
100 mA
0.3
0.2
30 mA
0.1
0.2
0.3
0.4
0.5
0
−40
0.6
Forward voltage VF (V)
Ct  VR
40
80
120
160
200
IR  T a
104
Reverse current IR (µA)
Terminal capacitance Ct (pF)
f = 1 MHz
Ta = 25°C
20
15
10
0
0
10
20
30
40
50
Reverse voltage VR (V)
2
103
VR = 30 V
5V
102
10
5
60
1
−40
102
25°C
0
40
80
120
160
Ambient temperature Ta (°C)
0
10
20
30
40
50
Reverse voltage VR (V)
105
25
100°C
1
0
Ambient temperature Ta (°C)
30
103
10
0.1
0
Reverse current IR (µA)
100°C
10
104
0.4
− 20°C
Ta = 150°C
Forward voltage VF (V)
Forward current IF (mA)
102
200
60
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