Infineon BC858CW Pnp silicon af transistor Datasheet

BC856W...BC860W
PNP Silicon AF Transistors
For AF input stages and driver applications
3
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
2
BC846W, BC847W, BC848W
1
BC849W, BC850W (NPN)
Pin Configuration
VSO05561
Type
Marking
BC856AW
3As
1=B
2=E
3=C
SOT323
BC856BW
3Bs
1=B
2=E
3=C
SOT323
BC857AW
3Es
1=B
2=E
3=C
SOT323
BC857BW
3Fs
1=B
2=E
3=C
SOT323
BC857CW
3Gs
1=B
2=E
3=C
SOT323
BC858AW
3Js
1=B
2=E
3=C
SOT323
BC858BW
3Ks
1=B
2=E
3=C
SOT323
BC858CW
3Ls
1=B
2=E
3=C
SOT323
BC859AW
4As
1=B
2=E
3=C
SOT323
BC859BW
4Bs
1=B
2=E
3=C
SOT323
BC859CW
4Cs
1=B
2=E
3=C
SOT323
BC860BW
4Fs
1=B
2=E
3=C
SOT323
BC860CW
4Gs
1=B
2=E
3=C
SOT323
1
Package
Dec-11-2001
BC856W...BC860W
Maximum Ratings
Parameter
Symbol
BC856W BC857W BC858W Unit
BC860W BC859W
Collector-emitter voltage
VCEO
65
45
30
V
Collector-base voltage
VCBO
80
50
30
Collector-emitter voltage
VCES
80
50
30
Emitter-base voltage
VEBO
5
5
5
DC collector current
IC
100
mA
Peak collector current
ICM
200
mA
Peak base current
IBM
200
Peak emitter current
IEM
200
Total power dissipation, TS = 124 °C
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
-65 ... 150
Thermal Resistance
Junction - soldering point 1)
105
RthJS
K/W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0
BC856W
65
-
-
BC857/860W
45
-
-
BC858/859W
30
-
-
BC856W
80
-
-
BC857/860W
50
-
-
BC858/859W
30
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0
V
V(BR)CEO
V(BR)CBO
1For calculation of R
thJA please refer to Application Note Thermal Resistance
2
Dec-11-2001
BC856W...BC860W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Symbol
Values
Parameter
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0
V
V(BR)CES
BC856W
80
-
-
BC857/860W
50
-
-
BC858/859W
30
-
-
V(BR)EBO
5
-
-
ICBO
-
-
15
nA
ICBO
-
-
5
µA
Emitter-base breakdown voltage
IE = 1 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 10 µA, VCE = 5 V
hFE -group A
-
140
-
hFE -group B
-
250
-
hFE -group C
-
480
-
hFE -group A
125
180
250
hFE -group B
220
290
475
hFE -group C
420
520
800
hFE
DC current gain 1)
IC = 2 mA, VCE = 5 V
-
hFE
Collector-emitter saturation voltage1)
mV
VCEsat
IC = 10 mA, IB = 0.5 mA
-
75
300
IC = 100 mA, IB = 5 mA
-
250
650
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
850
-
IC = 2 mA, VCE = 5 V
600
650
750
IC = 10 mA, VCE = 5 V
-
-
820
Base-emitter saturation voltage 1)
VBEsat
Base-emitter voltage 1)
VBE(ON)
1) Pulse test: t ≤=300µs, D = 2%
3
Dec-11-2001
BC856W...BC860W
Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
3
5
pF
Ceb
-
10
15
AC characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
h11e
hFE -gr.A
hFE -gr.B
hFE -gr.C
Open-circuit reverse voltage transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A
hFE -gr.B
hFE -gr.C
Short-circuit forward current transf.ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A
hFE -gr.B
hFE -gr.C
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
hFE -gr.A
hFE -gr.B
hFE -gr.C
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k,
BC856W
f = 1 kHz, f = 200 Hz
BC857W
-
2.7
4.5
8.7
-
10-4
h12e
-
1.5
2
3
-
h21e
-
200
330
600
-
-
18
30
60
-
10
-
1
1
-
4
4
0.11
h22e
F
k
S
dB
BC858W
Noise figure
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 1 kHz, f = 200 Hz
F
BC859W
BC860W
Equivalent noise voltage
IC = 200 µA, VCE = 5 V, RS = 2 k,
f = 10 ... 50 Hz
Vn
µV
BC860W
4
Dec-11-2001
BC856W...BC860W
Collector-base capacitance CCB = f (VCBO)
Emitter-base capacitance CEB = f (VEBO)
Total power dissipation Ptot = f (TS )
300
C CB0
( C EB0 )
mW
12
pF
BC 856...860
EHP00376
P tot
10
200
8
150
6
100
4
50
2
0
0
20
40
60
80
120 °C
100
0
10 -1
150
C EBO
C CBO
5
10 0
V
TS
VCB0
Permissible pulse load
Transition frequency fT = f (IC)
Ptotmax / PtotDC = f (tp )
VCE = 5V
Ptot max
5
Ptot DC
tp
D=
T
EHP00378
10 3
EHP00377
10 3
10 1
(VEB0 )
MHz
tp
fT
5
T
10 2
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
5
10 1
10 2
5
5
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
s
10 1
10 -1
10 0
tp
5
5 10 0
5
10 1
mA
ΙC
10 2
Dec-11-2001
BC856W...BC860W
Collector cutoff current ICBO = f (TA)
Collector-emitter saturation voltage
VCB = 30V
IC = f (VCEsat), h FE = 20
EHP00381
10 4
nA
mA
ΙC
Ι CB0
EHP00380
10 2
10 3
100 C
25 C
-50 C
5
10
10 1
max
2
5
5
typ
10 1
5
10
10
0
5
0
5
10 -1
0
50
100
C
10 -1
150
0
0.1
0.2
0.4
0.3
TA
DC current gain hFE = f (IC )
Base-emitter saturation voltage
VCE = 5V
IC = f (VBEsat), hFE = 20
EHP00382
10 3
V 0.5
VCEsat
EHP00379
10 2
mA
h FE 5
ΙC
100 C
100 C
25 C
-50C
25 C
10 2
-50 C
10 1
5
5
10 1
10 0
5
5
10 0
10 -2
5 10 -1
5 10 0
5 10 1
10 -1
mA 10 2
ΙC
6
0
0.2
0.4
0.6
0.8
V
1.2
V BEsat
Dec-11-2001
BC856W...BC860W
h parameter he = f (IC) normalized
h parameter he = f (VCE) normalized
VCE = 5V
IC = 2mA
10 2
he
BC 856...860
EHP00383
2.0
5
BC 856...860
he
Ι C = 2 mA
h 11
1.5
VCE = 5 V
h 11e
10 1
EHP00384
5
1.0
h 12e
h12
10 0
h 22
0.5
5
h 21e
h 22e
0
10 -1
10 -1
5
10 0
mA
10 1
0
10
20
V
ΙC
VCE
Noise figure F = f (VCE )
Noise figure F = f (f)
IC = 0.2mA, RS = 2k, f = 1kHz
20
dB
BC 856...860
30
IC = 0.2mA, VCE = 5V, R S = 2k
EHP00385
20
BC 856...860
EHP00386
dB
F
F
15
15
10
10
5
5
0
10 -1
5
10 0
5
10 1
V
0
10 -2
10 2
VCE
10 -1
10 0
10 1
kHz 10 2
f
7
Dec-11-2001
BC856W...BC860W
Noise figure F = f (IC )
Noise figure F = f (IC)
VCE = 5V, f = 120Hz
VCE = 5V, f = 1kHz
20
BC 856...860
EHP00387
20
BC 856...860
EHP00388
dB
dB
F
F
15
15
R S = 1 MΩ
100 kΩ
10 k Ω
R S = 1 MΩ
100 k Ω
10 kΩ
10
10
500 Ω
1 kΩ
5
5
1 kΩ
0
10 -3
10 -2
10 -1
10 0
500 Ω
0
10 -3
mA 10 1
ΙC
10 -2
10 -1
10 0
mA 10 1
ΙC
Noise figure F = f (IC )
VCE = 5V, f = 10kHz
20
BC 856...860
EHP00389
dB
F
15
R S = 1 MΩ
100 k Ω
10
500 Ω
10 kΩ
5
1 kΩ
0
10-3
10 -2
10 -1
10 0
mA 10 1
ΙC
8
Dec-11-2001
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