UOT MID-85H1C Side look package pin photodiode Datasheet

SIDE LOOK PACKAGE
PIN PHOTODIODE
MID-85H1C
Description
Package Dimensions
The MID-85H1C is a photodiode mounted in special
5.00
(.200)
dark plastic package and suitable for the IRED
Unit: mm ( inches )
(850nm/880nm) Type.
6.60
(.260)
4.00
(.160)
4.00
(.160)
22.60 TYP.
(.890)
RADIANT SENSITIVE AREA
16.00 MIN.
(.630)
Features
l
High photo sensitivity
l
Low junction capacitance
l
High cut -off frequency
l
Fast switching time
l
Suitable for the IRED 850nm/880nm type
0.50 TYP.
(.020)
1.00MIN.
(.040)
2.54
(.100)
C
A
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.0 mm (.040") max.
3. Lead spacing is measured where the leads emerge from the package.
Absolute Maximum Ratings
@ TA=25oC
Parameter
Power Dissipation
Maximum Rating
Unit
100
mW
o
o
Operating Temperature Range
-55 C to +100 C
Storage Temperature Range
-55oC to +100oC
Lead Soldering Temperature
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MID-85H1C
Optical-Electrical Characteristics
@ TA=25oC
Parameter
Test Conditions
Symbol
Min.
V(BR)R
30
IR=0.1mA
Reverse Break Down Voltage
Typ.
Max.
Unit
V
Ee=0
VR=10V
Reverse Dark Current
ID
30
nA
Ee=0
λ=850nm
Open Circuit Voltage
Ee=0.1mW/cm
VOC
350
mV
nsec
2
Rise Time
VR =10V λ=850nm
Tr
50
Fall Time
RL=50Ω
Tf
50
Light Current
VR =5V, λ=850nm
IL
9
µA
CT
25
pF
Ee=0.1mW/cm
2
VR =3V, f=1MHz
Total Capacitance
Ee=0
Typical Optical-Electrical Characteristic Curves
100
Capacitance C - pF
Dark Current IR - pA
4000
3000
2000
1000
0
60
40
20
0
0
5
10
15
0.01
20
Reverse Volatage - VR
FIG.1 DARK CURRENT VS REVERSE VOLTAGE
TEMP=25oC, Ee=0 mW/cm2
0.1
1
10
100
Reverse Voltage- VR
FIG.2 CAPACITANCE VS. REVERSE VOLTAGE
F=1MHz ; Ee=0mW/cm2
200
1000
Dark Current IR - nA
Total Power Dissipation mW
80
150
100
50
0
100
10
1
0.1
0
20
40
60
80
100
Ambient Temperature -oC
FIG.3 TOTAL POWER DISSIPATION
VS. AMBIENT TEMPERATURE
0
20
40
60
80
100
Ambient Temperature - oC
FIG.4 DARK CURRENT VS AMBIENT TEMPERATURE
VR=10V, Ee=0 mw/cm2
Unity Opto Technology Co., Ltd.
02/04/2002
MID-85H1C
100
Ip - µA
1000
80
100
60
Photocurrnet
Relative Spectral Sensitivity
Typical Optical-Electrical Characteristic Curves
40
20
0
10
1
0.1
700
800
900 1000 1100 1200
Wavelength-nm
FIG.5 RELATIVE SPECTRAL SENSITIVITY
VS. WAVELENGTH
0.01
0.1
1
10
Irradiance Ee (mW/cm2)
FIG.6 PHOTOCURRENT VS.
IRRADIANCE = 850 nm
Relative Sensitivity
0° 10° 20°
30°
40°
1.0
0.9
50°
60°
70°
80°
90°
0.8
0.5 0.3 0.1 0.2 0.4 0.6
FIG.7 SENSITIVITY DIAGRAM
Unity Opto Technology Co., Ltd.
02/04/2002
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