Central CZT853 TM Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT853 type is a high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING CODE: FULL PART NUMBER PNP complement: CZT953 SOT-223 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL VCBO 200 UNITS V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 6.0 V Collector Current IC 6.0 A Power Dissipation PD 3.0 W (Note 1) TJ,Tstg -65 to +150 °C ΘJA 41.7 °C/W Collector-Base Voltage Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN SYMBOL ICBO ICER ICBO IEBO BVCBO BVCER BVCEO BVEBO MAX UNITS VCB=150V 10 nA VCE=150V, RBE ≤ 1kΩ VCB=150V, TA=100°C 10 nA 1.0 μA 10 nA VEB=6.0V IC=100μA IC=10mA, RBE ≤ 1kΩ IC=10mA VCE(SAT) IE=100μA IC=100mA, IB=5mA IC=2.0A, IB=100mA VCE(SAT) VBE(SAT) IC=5.0A, IC=5.0A, VCE(SAT) TYP 200 220 200 210 V 100 110 V 6.0 8.0 IB=500mA IB=500mA 22 135 V V 50 mV 170 mV 340 mV 1.25 V Notes: (1) FR-4 Epoxy PC Board with copper mounting pad area of 4in2 (minimum) R1 (30-January 2006) Central TM CZT853 Semiconductor Corp. SURFACE MOUNT HIGH CURRENT SILICON NPN TRANSISTOR ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) TEST CONDITIONS MIN TYP MAX hFE hFE 100 200 300 50 100 SYMBOL hFE hFE fT Cob VCE=2.0V, IC=10mA VCE=2.0V, IC=2.0A VCE=2.0V, IC=4.0A 100 VCE=2.0V, IC=10A VCE=10V, IC=100mA, f=50MHz 20 VCB=10V, IE=0, f=1.0MHz UNITS 30 190 MHz 38 pF SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER R1 (30-January 2006)