IXYS DSB60C60PB High performance schottky diode low loss and soft recovery common cathode Datasheet

DSB 60 C 60PB
advanced
V RRM =
60 V
I FAV = 2x 30 A
V F = 0.69 V
Schottky
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
1
Part number
2
3
DSB 60 C 60PB
Backside: cathode
Features / Advantages:
Applications:
Package:
● Very low Vf
● Extremely low switching losses
● Low Irm-values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
● Low losses
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
● Industry standard outline
● Epoxy meets UL 94V-0
● RoHS compliant
TO-220AB
Ratings
Symbol
Definition
VRRM
max. repetitive reverse voltage
IR
reverse current
VF
Conditions
forward voltage
min.
TVJ = 25 °C
Unit
60
V
TVJ = 25 °C
20
mA
VR = 60 V
TVJ = 100 °C
50
mA
I F = 30 A
I F = 60 A
TVJ = 25 °C
0.78
1.21
V
V
I F = 30 A
I F = 60 A
T VJ = 125 °C
0.69
0.95
V
V
rectangular, d = 0.5
T C = 125 °C
30
A
T VJ = 150 °C
0.46
6.9
V
mΩ
0.85
K/W
150
°C
TC = 25 °C
145
W
320
A
average forward current
VF0
rF
threshold voltage
slope resistance
R thJC
thermal resistance junction to case
TVJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
t p = 10 ms (50 Hz), sine
TVJ = 45 °C
CJ
junction capacitance
VR = tbd V; f = 1 MHz
TVJ =
EAS
non-repetitive avalanche energy
I AS = tbd A; L = 100 µH
T VJ = 25 °C
I AR
repetitive avalanche current
VA = 1.5·VR typ.; f = 10 kHz
for power loss calculation only
-55
25 °C
Data according to IEC 60747and per diode unless otherwise specified
tbd
pF
tbd
mJ
tbd
A
0629
© 2006 IXYS all rights reserved
max.
VR = 60 V
I FAV
IXYS reserves the right to change limits, conditions and dimensi
typ.
DSB 60 C 60PB
advanced
Ratings
Symbol
Definition
Conditions
I RMS
RMS current
per pin*
RthCH
thermal resistance case to heatsink
MD
mounting torque
FC
mounting force with clip
T stg
storage temperature
min.
typ.
max.
Unit
35
A
0.50
K/W
0.4
0.6
Nm
20
60
N
-55
150
°C
Weight
2
g
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-220AB
M
C
D
B
E
F
N
A
H
G
J
K
L
© 2006 IXYS all rights reserved
R
Millimeter
Min. Max.
Inches
Min. Max.
A
B
12.70 13.97
14.73 16.00
0.500 0.550
0.580 0.630
C
D
9.91
3.54
10.66
4.08
0.390 0.420
0.139 0.161
E
F
5.85
2.54
6.85
3.18
0.230 0.270
0.100 0.125
G
H
1.15
2.79
1.65
5.84
0.045 0.065
0.110 0.230
J
K
0.64
2.54
1.01
BSC
0.025 0.040
0.100 BSC
M
N
4.32
1.14
4.82
1.39
0.170 0.190
0.045 0.055
Q
R
0.35
2.29
0.56
2.79
0.014 0.022
0.090 0.110
Data according to IEC 60747and per diode unless otherwise specified
0629
IXYS reserves the right to change limits, conditions and dimensi
Q
Dim.
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