NEC NE8500100-WB 1 w c-band power gaas fet n-channel gaas mes fet Datasheet

PRELIMINARY DATA SHEET
GaAs MES FET
NE85001 SERIES
1 W C-BAND POWER GaAs FET
N-CHANNEL GaAs MES FET
DESCRIPTION
The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator
applications and so on.
NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
The device incorporates Ti-Al gate and silicon dioxide glassivation. To reduce the thermal resistance, the device
has a PHS. (Plated Heat Sink)
NEC’s strigent quality assurance and test procedures assure the highest reliability and performance.
PHYSICAL DIMENSIONS
FEATURES
• Class A operation
146
170
NE8500100 (CHIP) (unit: µm)
65
• High power output
• High reliability
640
SELECTION CHART
100
PERFORMANCE SPECIFIED
PART NUMBER
FORM
Pout (**)
(dBm)
NE8500100(*)
NE8500100-WB
NE8500100-RG
chip
28.5 min
NE8500199
*
100
GL (**)
(dB)
USABLE
FREQUENCY
(GHz)
9.0 typ
2.0 to 10
100
780
PACKAGE CODE-99 (unit: mm)
package
28.5 min
9.0 typ
WB, RG indicate a type of containers for chips.
WB: black carrier, RG: ring,: gel-pack,
** Specified at the condition at the last page.
2.0 to 10
1.0 ±0.1
4.0 MIN BOTH LEADS
SOURCE
GATE
φ 2.2 ±0.3
2 PLACES
4.3 ±0.2
4.0
DRAIN
0.6 ±0.1
5.2 ±0.3
11.0 ±0.3
15.0 ±0.3
0.1
0.2 MAX.
1.7 ±0.15
Document No. P10968EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
5.0 MAX.
6.0 ±0.2
1.2
©
1996
NE85001 SERIES
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSX
15
V
Gate to Drain Voltage
VGDX
–18
V
Gate to Source Voltage
VGSX
–12
V
Total Power Disipation(*)
PT
6.0
W
Drain Current
ID
1.12
A
Gate Current
IG
6.0
mA
Channel Temperature
Tch
175
˚C
Storage Temperature
Tstg
–65 to 175
˚C
*TC = 25 ˚C
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
Drain to Source Voltage
VDS
9
–
10
V
Channel Temperature
Tch
–
–
130
˚C
Gcomp
–
–
3
dBcomp
Rg
–
–
1
kΩ
Input Power
Gate Resistance
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
UNIT
Idss
430
–
860
mA
Vds = 2.5 V, Vgs = 0 V
Pinch-off Voltage
VP
–3.0
–
–1.0
V
Vds = 2.5 V, Ids = 4 mA
Transconductance
gm
–
300
–
mS
Vds = 2.5 V, Ids = Idss
Thermal Resistance
Rth
–
–
30
˚C/W
Saturated Drain Current
TEST CONDITIONS
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
PART NUMBER
NE8500100
NE8500100-WG
NE8500100-RG
NE8500199
PACKAGE CODE
CHIP
99
TEST CONDITIONS
f = 7.2 GHz
Vds = 10 V
Ids = 200 mA set
Rg = 1 kΩ
Pin = 21.0 dBm(*)
CHARACTERISTIC
SYMBOL
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Output Power
PO
28.5
–
–
28.5
–
–
dBm
Gate to source
Current
Igs
–2.0
–
2.0
–2.0
–
2.0
mA
Linear Gain
GL
–
9
–
–
9
–
dB
*
Pin for Pout specification.
** The same conditions as the above except this.
2
UNIT
Pin ≤ 11 dBm (**)
NE85001 SERIES
TYPICAL CHARACTERISTICS (TA = 25 ˚C)
NE8500199
OUTPUT POWER vs. INPUT POWER
Pout - Output Power - dBm
30
VDS = 10 V
Ids = 200 mA set
f = 7.2 GHz
25
300
250
200
20
ID (mA)
15
10
15
20
Pin - Input Power - dBm
3
NE85001 SERIES
S-PARAMETER
VDS = 10 V, IDS = 200 mA, VGS = –1.260 V, IG = 0.0 mA, RG = 1 kΩ
FREQUENCY
S11
GHz
MAG
0.100
0.500
1.000
1.500
2.000
2.500
3.000
3.500
3.600
3.700
3.800
3.900
4.000
4.200
4.400
4.500
4.600
4.800
5.000
5.200
5.400
5.500
5.600
5.800
6.000
6.200
6.400
6.500
6.600
6.800
7.000
7.200
7.400
7.500
7.600
7.800
8.000
8.200
8.400
8.500
8.600
8.800
9.000
9.200
9.400
9.500
9.600
9.800
10.000
4
0.990
0.916
0.869
0.851
0.840
0.831
0.826
0.824
0.825
0.825
0.827
0.829
0.829
0.821
0.808
0.803
0.799
0.790
0.784
0.777
0.771
0.767
0.764
0.758
0.751
0.742
0.731
0.726
0.721
0.707
0.689
0.676
0.657
0.649
0.640
0.621
0.604
0.590
0.584
0.577
0.574
0.570
0.571
0.583
0.599
0.611
0.619
0.631
0.631
S21
ANG
–22.7
–91.1
–132.1
–152.9
–166.1
–175.9
176.0
168.8
167.5
166.0
164.4
162.8
161.0
157.2
153.9
152.5
151.0
147.9
144.7
141.4
137.7
135.9
133.9
130.1
125.8
121.3
116.6
114.1
111.6
106.1
100.2
93.9
87.1
83.4
79.9
71.8
63.2
53.4
42.7
37.0
31.2
18.8
5.9
–7.6
–21.4
–28.5
–35.9
–50.4
–62.9
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
14.418
10.211
6.444
4.610
3.591
2.975
2.601
2.341
2.291
2.253
2.230
2.187
2.127
2.053
1.976
1.963
1.970
1.944
1.929
1.923
1.897
1.916
1.916
1.887
1.928
1.896
1.951
1.951
1.936
1.973
1.957
2.004
2.002
2.013
2.045
2.042
2.067
2.078
2.088
2.102
2.083
2.088
2.072
2.044
2.040
2.030
2.008
1.943
1.812
165.5
123.3
94.8
76.6
61.9
49.1
37.3
26.0
23.4
20.7
18.1
16.1
13.4
8.6
5.6
3.4
0.8
–3.1
–8.6
–12.8
–18.5
–20.7
–22.7
–28.5
–33.5
–39.1
–44.8
–47.2
–50.6
–56.8
–62.4
–69.1
–74.9
–78.8
–82.4
–88.6
–96.6
–103.5
–112.0
–115.5
–119.1
–127.8
–135.7
–144.6
–153.1
–157.9
–162.9
–173.2
177.3
0.007
0.024
0.031
0.034
0.038
0.042
0.047
0.053
0.055
0.056
0.059
0.063
0.066
0.072
0.074
0.075
0.077
0.080
0.084
0.089
0.093
0.097
0.100
0.105
0.113
0.116
0.126
0.130
0.133
0.143
0.149
0.163
0.171
0.177
0.185
0.195
0.206
0.216
0.227
0.232
0.237
0.246
0.253
0.264
0.274
0.277
0.281
0.284
0.280
70.1
47.7
33.6
29.0
28.1
26.7
25.4
27.4
27.0
26.5
26.8
26.5
25.4
20.1
16.8
15.2
13.9
12.6
9.3
7.4
4.5
3.1
1.8
–1.9
–4.8
–8.0
–11.6
–13.2
–15.9
–20.4
–23.9
–28.9
–33.3
–36.8
–39.6
–45.0
–51.8
–57.8
–65.4
–68.0
–71.2
–78.3
–84.7
–92.3
–99.3
–103.2
–107.4
–115.9
–123.6
0.065
0.175
0.221
0.241
0.260
0.278
0.296
0.313
0.317
0.323
0.333
0.340
0.345
0.353
0.343
0.337
0.340
0.341
0.340
0.349
0.347
0.358
0.363
0.358
0.381
0.369
0.397
0.396
0.387
0.411
0.402
0.424
0.425
0.431
0.448
0.452
0.465
0.478
0.492
0.500
0.501
0.519
0.534
0.545
0.568
0.577
0.583
0.600
0.587
–64.6
–126.4
–149.1
–159.2
–165.6
–170.8
–174.6
–177.8
–179.2
179.8
179.4
178.7
176.3
171.0
167.3
166.2
164.8
163.2
159.8
158.6
155.6
154.2
154.5
151.6
149.5
146.8
144.2
144.2
141.8
138.6
137.1
133.8
132.3
129.4
127.2
123.8
117.2
112.7
104.8
102.7
100.1
93.0
87.2
80.1
73.6
69.7
65.8
56.3
47.0
NE85001 SERIES
CHIP HANDLING
DIE ATTACHMENT
Die attach can be accomplished with a Au-Sn (300 ±10 ˚C) performs in a forming gas environment. Epoxy die
attach is not recommended.
BONDING
Gate and drain bonding wires should be minimum length, semi-hard gold wire (3 - 8 % elongation) 30 microns or
less in diameter.
Bonding should be performed with a wedge tip that has a taper of approximately 15 %.
Die attach and bonding time should be kept to a minimum. As a general rule, the bonding operation should be
kept within a 280 ˚C _ 5 minute curve. If longer periods are required, the temperature should be lowered.
PRECAUTIONS
The user must operate in a clean, dry environment.
The chip channel is glassivated for mechanical protection only and does not preclude the necessity of a clean
environment.
The bonding equipment should be periodically checked for sources of surge voltage and should be properly
grounded at all times. In fact, all test and handling equipment should be grounded to minimize the possibilities of static
discharge.
5
NE85001 SERIES
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
2
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