Diodes FMMT459 500v npn high voltage transistor in sot23 Datasheet

A Product Line of
Diodes Incorporated
FMMT459
500V NPN HIGH VOLTAGE TRANSISTOR IN SOT23
Feature
Mechanical Data
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BVCEV > 500V
BVECV > 6V reverse blocking
IC = 150mA high Continuous Collector Current
ICM Up to 500mA Peak Pulse Current
625mW Power Dissipation
Low Saturation Voltage <-90mV @ 50mA
Excellent hFE Characteristics Up To 120mA
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
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Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Applications
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SOT23
Off-line switching applications
RCD circuits
PFC disable switch in PSU
Emergency lighting
Piezo actuators
Telecom protected line switching
C
E
C
B
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Note 4)
Part Number
FMMT459TA
Notes:
Compliance
AEC-Q101
Marking
459
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
459
FMMT459
Document number: DS33089 Rev. 7 - 2
459 = Product Type Marking Code
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FMMT459
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Emitter-Collector Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
VCBO
VCEV
VCEO
VEBO
VECV
IC
ICM
IB
Value
500
500
450
7
6
150
500
200
Unit
V
V
V
V
V
mA
mA
mA
Value
625
806
200
155
194
-55 to +150
Unit
mW
mW
C/W
C/W
C/W
C
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
Symbol
PD
PD
RθJA
RθJA
RθJL
TJ, TSTG
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 25mm x 25mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note 5, except the device is measured at t ≤ 5 sec.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT459
Document number: DS33089 Rev. 7 - 2
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FMMT459
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
IC Collector Current (A)
1
100m
DC
1s
100ms
10m
10ms
1ms
100µs
Single Pulse T amb=25°C
1m
100m
1
10
100
VCE Collector-Emitter Voltage (V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
20
60
80
100 120 140 160
Temperature (°C)
Derating Curve
Safe Operating Area
100
200
Maximum Power (W)
Thermal Resistance (°C/W)
40
150
D=0.5
100
Single Pulse
D=0.2
50
D=0.05
D=0.1
0
100µ
1m
10m 100m
1
Pulse Width (s)
10
100
1k
Transient Thermal Impedance
FMMT459
Document number: DS33089 Rev. 7 - 2
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Single Pulse
Tamb=25°C
10
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Pulse Power Dissipation
March 2014
© Diodes Incorporated
A Product Line of
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FMMT459
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Emitter-Base Breakdown Voltage (Reverse Blocking)
Collector Cutoff Current
Emitter Cutoff Current
Collector Emitter Cutoff Current
Static Forward Current Transfer Ratio (Note 9)
Symbol
BVCBO
BVCEV
BVCEO
BVEBO
BVECV
ICBO
IEBO
ICES
hFE
Min
500
500
450
7
6
—
—
—
50
—
Typ
700
700
500
8.1
8.1
<10
<10
<10
120
70
Max
—
—
—
—
—
100
100
100
—
—
Unit
V
V
V
V
V
nA
nA
nA
60
70
0.71
0.76
—
75
90
0.9
0.9
5
mV
mV
V
V
pF
—
Test Condition
IC = 100µA
IC = 10µA; 0.3V > VBE > -1V
IC = 1mA
IE = 100µA
IC = 1µA; 0.3V > VBC > -6V
VCB = 450V
VEB = 5.6V
VCE = 450V
IC = 30mA, VCE = 10V
IC = 50mA, VCE = 10V
IC = 20mA, IB = 2mA
IC = 50mA, IB = 6mA
IC = 50mA, VCE = 10V
IC = 50mA, IB = 5mA
VCB = 20V, f = 1MHz
VCE = 20V, IC = 10mA,
f = 20MHz
Collector-Emitter Saturation Voltage (Note 9)
VCE(sat)
Base-Emitter Turn-On Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Output Capacitance
VBE(on)
VBE(sat)
Cobo
—
—
—
—
—
Transition Frequency
fT
50
—
—
MHz
Turn-On Time
ton
—
113
—
ns
VC = 100V, IC = 50mA
Turn-Off Time
toff
—
3450
—
ns
IB1 = 5mA, IB2 = -10mA
Notes:
9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
FMMT459
Document number: DS33089 Rev. 7 - 2
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FMMT459
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
0.40
Tamb=25°C
0.35
0.30
VCE(SAT) (V)
VCE(SAT) (V)
IC/IB=50
100m
IC/IB=10
IC/IB=20
10m
1m
IC/IB=20
100°C
0.25
0.20
25°C
0.15
0.10
-55°C
0.05
10m
100m
1m
IC Collector Current (A)
10m
VCE(SAT) v IC
VCE(SAT) v IC
210
VCE=10V
100°C
1.0
150
25°C
120
0.6
90
-55°C
0.4
60
0.2
0.0
1m
IC/IB=20
180
30
10m
100m
IC Collector Current (A)
0
0.8
VBE(SAT) (V)
0.8
1.0
Typical Gain (hFE)
Normalised Gain
1.2
100m
IC Collector Current (A)
0.6
-55°C
25°C
100°C
0.4
1m
hFE v IC
10m
100m
IC Collector Current (A)
VBE(SAT) v IC
1.0
VCE=10V
VBE(ON) (V)
0.8
-55°C
0.6
0.4
1m
25°C
100°C
10m
100m
IC Collector Current (A)
VBE(ON) v IC
FMMT459
Document number: DS33089 Rev. 7 - 2
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FMMT459
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
°
7
l
l
A
H
J
K
1
K
a
M
A
1
L
L
B
C
D
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
X
Note:
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
2.0
C
1.35
E
E
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.
FMMT459
Document number: DS33089 Rev. 7 - 2
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
www.diodes.com
FMMT459
Document number: DS33089 Rev. 7 - 2
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