JMNIC BF861 N-channel junction fet Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BF861A; BF861B; BF861C
N-channel junction FETs
Product specification
Supersedes data of 1995 Apr 14
File under Discrete Semiconductors, SC07
1997 Sep 04
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
FEATURES
• High transfer admittance
handbook, halfpage
2
• Low input capacitance
1
• Low feedback capacitance
• Low noise.
d
g
s
APPLICATIONS
3
• Preamplifiers for AM tuners in car radios.
Top view
DESCRIPTION
MAM036
Marking codes:
BF861A: M33.
BF861B: M34.
BF861C: M35.
N-channel symmetrical junction field effect transistors in a
SOT23 package.
Fig.1 Simplified outline and symbol.
PINNING - SOT23
PIN
SYMBOL
DESCRIPTION
1
s
source
2
d
drain
3
g
gate
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
25
BF861A
2
6.5
mA
BF861B
6
15
mA
BF861C
12
25
mA
−
250
mW
BF861A
12
20
mS
BF861B
16
25
mS
BF861C
20
30
mS
VDS
drain-source voltage (DC)
IDSS
drain current
V
VGS = 0; VDS = 8 V
Ptot
total power dissipation
up to Tamb = 25 °C
yfs
forward transfer admittance
VGS = 0; VDS = 8 V
Ciss
input capacitance
f = 1 MHz
−
10
pF
Crss
reverse transfer capacitance
f = 1 MHz
−
2.7
pF
1997 Sep 04
2
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage (DC)
−
25
V
VGSO
gate-source voltage
open drain
−
25
V
VDGO
drain-gate voltage (DC)
open source
−
25
V
IG
forward gate current (DC)
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
−
Note
1. Device mounted on an FR4 printed-circuit board.
MRC166
300
Ptot
(mW)
200
100
00
50
100
Tamb ( oC)
150
Fig.2 Power derating curve.
1997 Sep 04
10
mA
250
mW
−65
+150
°C
−
150
°C
up to Tamb = 25 °C; note 1 −
3
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
VALUE
UNIT
500
K/W
thermal resistance from junction to ambient; note 1
Note
1. Device mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj = 25 °C; VDS = 8 V; VGS = 0; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V(BR)GSS
gate-source breakdown voltage IG = −1 µA
VGSoff
gate-source cut-off voltage
TYP.
MAX.
UNIT
−25
−
−
V
BF861A
−0.2
−
−1
V
BF861B
−0.5
−
−1.5
V
ID = 1 µA
BF861C
VGSS
gate-source forward voltage
IDSS
drain current
VDS = 0; IG = 1 mA
BF861A
−0.8
−
−2
V
−
−
1
V
2
−
6.5
mA
BF861B
6
−
15
mA
BF861C
12
−
25
mA
−
−
−1
nA
BF861A
12
−
20
mS
BF861B
16
−
25
mS
BF861C
20
−
30
mS
BF861A
−
−
200
µS
BF861B
−
−
250
µS
BF861C
−
−
300
µS
−
−
10
pF
IGSS
gate cut-off current
yfs
forward transfer admittance
gos
MIN.
VGS = −20 V; VDS = 0
common source output
conductance
Ciss
input capacitance
f = 1 MHz
Crss
reverse transfer capacitance
f = 1 MHz
−
2.1
2.7
pF
Vn/√B
equivalent input noise voltage
VGS = 0; f = 1 MHz
−
1.5
−
nV/√Hz
1997 Sep 04
4
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD461
30
MBD462
300
handbook, halfpage
I DSS
gos
(µS)
(mA)
20
200
10
100
0
0
0
0.5
1
1.5
2
V GSoff (V)
0
10
15
20
I DSS (mA)
25
VDS = 8 V.
VGS = 0.
VDS = 8 V.
Fig.3
5
Drain current as a function of gate-source
cut-off voltage; typical values.
Fig.4
MBD464
MBD463
30
Common-source output conductance as
a function of drain current; typical values.
25
handbook, halfpage
handbook, halfpage
BF861C
y fs
(mS)
20
y fs
(mS)
BF861B
BF861A
20
15
10
10
5
0
0
0
5
10
15
20
I DSS (mA)
0
25
VDS = 8 V.
VGS = 0.
Fig.5
5
10
15
I D (mA)
20
VDS = 8 V.
Forward transfer admittance as a
function of drain current; typical values.
1997 Sep 04
Fig.6
5
Forward transfer admittance as a
function of drain current; typical values.
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD466
MBD465
5
5
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
4
4
3
3
V GS = 0 V
100 mV
2
2
1
1
200 mV
300 mV
0
0
0.8
1
0.6
0.4
0
0.2
0
VGS (V)
BF861A
VDS = 8 V.
2
4
6
8
10
V DS (V)
BF861A
VDS = 8 V.
Fig.7 Typical input characteristics.
Fig.8 Typical output characteristics.
MBD468
MBD467
10
10
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
8
8
6
6
4
4
V GS = 0 V
100 mV
200 mV
300 mV
400 mV
2
2
500 mV
0
0
0.8
1
0.6
0.4
0
0.2
0
VGS (V)
BF861B
VDS = 8 V.
2
4
6
8
10
V DS (V)
BF861B
VDS = 8 V.
Fig.9 Typical input characteristics.
1997 Sep 04
Fig.10 Typical output characteristics.
6
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD470
MBD469
20
20
handbook, halfpage
handbook, halfpage
ID
(mA)
ID
(mA)
V GS = 0 V
16
16
200 mV
400 mV
12
12
600 mV
800 mV
8
8
1V
4
4
0
0
2.5
2
1.5
1
0
0.5
0
VGS (V)
BF861C
VDS = 8 V.
2
4
6
8
10
V DS (V)
BF861C
VDS = 8 V.
Fig.11 Typical input characteristics.
Fig.12 Typical output characteristics.
MBD471
10
MBD472
2
10halfpage
handbook,
handbook, halfpage
Cis ,C rs
I D = 10 mA
(pF)
IG
8
10
1 mA
(nA)
0.1 mA
1
6
10 1
C is
10 2
4
I GSS
10 3
C rs
2
10 4
10 5
0
8
6
4
2
0
VGS (V)
0
5
10
15
20
25
VDG (V)
VDS = 8 V.
f = 1 MHz.
VDS = 8 V.
Fig.13 Input and reverse transfer capacitance
as functions of gate-source voltage;
typical values.
1997 Sep 04
Fig.14 Gate current as a function of
drain-gate voltage; typical values.
7
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD473
8
MBD474
10 2
handbook, halfpage
Vn/ B
(nV/ Hz)
g is,b is
(mS)
6
b is
10
4
g is
1
2
0
10 2
10 1
1
10
10 1
10
10 2
10 3
f (kHz)
10 2
10 3
f (MHz)
VDS = 8 V.
VGS = 0.
Tamb = 25 °C.
VDS = 8 V.
VGS = 0.
Fig.15 Equivalent input noise as a function of
frequency; typical values.
Fig.16 Common-source input
admittance; typical values.
MBD475
10 2
handbook, halfpage
MBD476
10 2
handbook, halfpage
grs,b rs
(mS)
gfs ,b fs
10
(mS)
b rs
1
10
b fs
g rs
10 1
10 2
10
1
10 2
f (MHz)
10 3
10
10 2
f (MHz)
10 3
VDS = 8 V.
VGS = 0.
Tamb = 25 °C.
VDS = 8 V.
VGS = 0.
Tamb = 25 °C.
Fig.17 Common-source reverse admittance;
typical values.
1997 Sep 04
g fs
Fig.18 Common-source forward transfer
admittance; typical values.
8
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
MBD477
10 2
g os,bos
(mS)
10
b os
1
g os
10 1
10
10 2
f (MHz)
10 3
VDS = 8 V.
VGS = 0.
Tamb = 25 °C.
Fig.19 Common-source output admittance;
typical values.
1997 Sep 04
9
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
PACKAGE OUTLINE
3.0
2.8
handbook, full pagewidth
0.55
0.45
B
1.9
0.150
0.090
0.95
2
1
0.1
max
10 o
max
0.2 M A
A
1.4
1.2
2.5
max
10 o
max
3
1.1
max
30 o
max
0.48
0.38
0.1 M A B
TOP VIEW
Dimensions in mm.
Fig.20 SOT23.
1997 Sep 04
10
MBC846
Philips Semiconductors
Product specification
N-channel junction FETs
BF861A; BF861B; BF861C
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 04
11
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© Philips Electronics N.V. 1997
SCA55
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Printed in The Netherlands
117067/00/03/pp12
Date of release: 1997 Sep 04
Document order number:
9397 750 02667
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