ON MMT08B310T3 Thyristor surge protector Datasheet

MMT08B310T3
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent
overvoltage damage to sensitive circuits by lightning, induction and
power line crossings. They are breakover−triggered crowbar
protectors. Turn−off occurs when the surge current falls below the
holding current value.
• High Surge Current Capability: 80 Amps 10 x 1000 µsec, for
Controlled Temperature Environments
• The MMT08B310 is used to help equipment meet various regulatory
requirements including: Bellcore 1089, ITU K.20 & K.21, IEC 950,
UL 1459 & 1950 and FCC Part 68.
• Bidirectional Protection in a Single Device
• Little Change of Voltage Limit with Transient Amplitude or Rate
• Freedom from Wearout Mechanisms Present in Non−Semiconductor
Devices
• Fail−Safe, Shorts When Overstressed, Preventing Continued
Unprotected Operation
• Surface Mount Technology (SMT)
•
Indicates UL Registered − File #E210057
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Off−State Voltage − Maximum
MMT08B310T3
VDM
Maximum Pulse Surge Short Circuit
Current Non−Repetitive
Double Exponential Decay Waveform
(Notes 1 and 2)
10 x 1000 µsec
(−25°C Initial Temperature)
8 x 20 µsec
10 x 160 µsec
10 x 560 µsec
Maximum Non−Repetitive Rate of
Change of On−State Current
Double Exponential Waveform,
R = 1.0, L = 1.5 µH, C = 1.67 µF,
Ipk = 110A
Value
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BIDIRECTIONAL TSPD (
80 AMP SURGE
310 VOLTS
MT1
MT2
SMB
(No Polarity)
(Essentially JEDEC DO−214AA)
CASE 403C
Unit
V
MARKING DIAGRAM
270
A(pk)
IPPS1
IPPS2
IPPS3
IPPS4
80
250
150
100
di/dt
100
)
YWW
RPCJ
RPCJ
Y
WW
A/µs
1. Allow cooling before testing second polarity.
2. Measured under pulse conditions to reduce heating.
= Specific Device Code
= Year
= Work Week
ORDERING INFORMATION
Device
Package
Shipping†
MMT08B310T3
SMB
12mm Tape and Reel
(2.5K/Reel)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
 Semiconductor Components Industries, LLC, 2003
October, 2003 − Rev. 0
1
Publication Order Number:
MMT08B310T3/D
MMT08B310T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Operating Temperature Range
Blocking or Conducting State
TJ1
−40 to + 125
°C
Overload Junction Temperature − Maximum Conducting State Only
TJ2
+ 175
°C
Instantaneous Peak Power Dissipation (Ipk = 50 A, 10x1000 µsec @ 25°C)
PPK
2000
W
TL
260
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities.
Characteristics
Breakover Voltage (Both polarities)
(dv/dt = 100 V/µs, ISC = 1.0 A, Vdc = 1000 V)
(+65°C)
Breakover Voltage (Both polarities)
(f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms),
RI = 1.0 kΩ, t = 0.5 cycle) (Note 3)
(+65°C)
Symbol
Min
Typ
Max
MMT08B310T3
−
−
365
MMT08B310T3
−
−
400
Unit
V(BO)
V
V(BO)
V
MMT08B310T3
−
−
365
MMT08B310T3
−
−
400
dV(BO)/dTJ
−
0.08
−
%/°C
V(BR)
−
310
−
V
Off State Current (VD1 = 50 V) Both polarities
Off State Current (VD2 = VDM) Both polarities
ID1
ID2
−
−
−
−
2.0
5.0
µA
On−State Voltage (IT = 1.0 A)
(PW ≤ 300 µs, Duty Cycle ≤ 2%) (Note 3)
VT
−
1.53
3.0
V
Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kΩ)
Both polarities
IBO
−
230
−
mA
Holding Current (Both polarities)
VS = 500 Volts; IT (Initiating Current) = 1.0 Amp
IH
175
130
340
−
−
−
mA
dv/dt
2000
−
−
V/µs
CO
−
−
23
45
−
50
pF
Breakover Voltage Temperature Coefficient
Breakdown Voltage (I(BR) = 1.0 mA) Both polarities
MMT08B310T3
(Note 3)
(+65°C)
Critical Rate of Rise of Off−State Voltage
(Linear waveform, VD = Rated VBR, TJ = 25°C)
Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal)
Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 mV rms Signal)
3. Measured under pulse conditions to reduce heating.
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
Parameter
ID1, ID2
Off State Leakage Current
VD1, VD2
Off State Blocking Voltage
VBR
Breakdown Voltage
VBO
Breakover Voltage
IBO
Breakover Current
IH
Holding Current
VTM
On State Voltage
VTM
V(BO)
IH
ID1
I(BO)
ID2
+ Voltage
VD1
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2
VD2
V(BR)
MMT08B310T3
100
V BR , BREAKDOWN VOLTAGE (VOLTS)
340
I D1, OFF−STATE CURRENT (µ A)
VD1 = 50 V
10
1
0.1
0.01
0
20
40
60
80
100
TEMPERATURE (°C)
120
300
280
260
240
220
200
180
160
−50
140
Figure 1. Off−State Current versus Temperature
380
1000
360
900
340
320
300
280
260
240
0
50
25
75
TEMPERATURE (°C)
100
125
800
700
600
500
400
300
200
220
200
−25
Figure 2. Breakdown Voltage versus Temperature
I H , HOLDING CURRENT (mA)
V BO , BREAKOVER VOLTAGE (VOLTS)
320
−50
−25
0
25
75
50
TEMPERATURE (°C)
100
100
−50
125
Figure 3. Breakover Voltage versus Temperature
−25
0
50
25
75
TEMPERATURE (°C)
100
125
Figure 4. Holding Current versus Temperature
Peak
Value
100
230
210
CURRENT (A)
Ipp − PEAK PULSE CURRENT − %Ipp
250
tr = rise time to peak value
tf = decay time to half value
Half Value
50
190
170
150
130
0
0 tr
110
10
tf
TIME (s)
100
1000
10000
TIME (s)
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
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3
MMT08B310T3
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
GND
TELECOM
EQUIPMENT
RING
PPTC*
TIP
OUTSIDE
PLANT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent
protection device
HEAT COIL
TIP
OUTSIDE
PLANT
GND
RING
HEAT COIL
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4
TELECOM
EQUIPMENT
MMT08B310T3
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
SMB
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5
mm inches
MMT08B310T3
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
D
B
C
K
P
J
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H 0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
H
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MMT08B310T3/D
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