ON MBRS260T3 Surface mount schottky power rectifier Datasheet

MBRS260T3
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
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•
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•
•
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SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 60 VOLTS
Compact Package with J−Bend Leads Ideal for Automated Handling
Highly Stable Oxide Passivated Junction
Guard−Ring for Over−Voltage Protection
Low Forward Voltage Drop
Pb−Free Package is Available
SMB
CASE 403A
PLASTIC
Mechanical Characteristics
•
•
•
•
•
•
•
Case: Molded Epoxy
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 95 mg (Approximately)
Cathode Polarity Band
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
ESD Ratings: Machine Model = C
Human Body Model = 3B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
VRRM
VRWM
VR
60
V
IO
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM
60
A
Storage Temperature Range
Tstg
−55 to +150
°C
Operating Junction Temperature
TJ
−55 to +125
°C
dv/dt
10,000
V/ms
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(At Rated VR, TL = 95°C)
Voltage Rate of Change
(Rated VR, TJ = 25°C)
MARKING DIAGRAM
AYWW
B26G
G
B26
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBRS260T3
MBRS260T3G
Package
Shipping†
SMB
2500/Tape & Reel
SMB
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 5
1
Publication Order Number:
MBRS260T3/D
MBRS260T3
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
RqJL
RqJA
24
80
°C/W
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
vF
Maximum Instantaneous Forward Voltage (Note 3)
(iF = 1.0 A)
(iF = 2.0 A)
IR
Maximum Instantaneous Reverse Current (Note 3)
(VR = 60 V)
TJ = 25°C
TJ = 125°C
0.51
0.63
0.475
0.55
TJ = 25°C
TJ = 125°C
0.2
20
V
mA
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
10
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
IF, INSTANTANEOUS FORWARD
CURRENT (AMPS)
10
75°C
125°C
25°C
1
0.1
0.1
0.2
0.3
0.4
0.5
0.6
0.7
25°C
1
0.1
0.8
75°C
125°C
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−02
100
IR, REVERSE CURRENT (AMPS)
125°C
25°C
f = 1 MHz
C, CAPACITANCE (pF)
1.0E−03
75°C
1.0E−04
1.0E−05
25°C
1.0E−06
1.0E−07
0
10
20
30
40
50
60
10
0
10
20
30
40
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Typical Capacitance
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2
50
60
RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED) RT, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
3.5
PFO, AVERAGE POWER DISSIPATION (W)
IF, AVERAGE FORWARD CURRENT (A)
MBRS260T3
dc
3
2.5
2
SQUARE WAVE
1.5
1
0.5
0
60
70
80
90
100
110
120
130
2
1.8
1.6
dc
1.4
1.2
1
SQUARE WAVE
0.8
0.6
0.4
0.2
0
0
0.5
1
1.5
2
2.5
TL, LEAD TEMPERATURE (°C)
IO, AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Current Derating − Junction to Lead
Figure 6. Forward Power Dissipation
3
1.0E+00
50%
20%
1.0E−01 10%
5.0%
1.0E−02 2.0%
1.0%
1.0E−03
1.0E−04
1.0E+00
1.0E−01
Rtjl(t) = Rtjl*r(t)
0.00001
0.0001
0.001
0.01
0.1
1.0
10
100
1000
10
100
1000
t, TIME (s)
Figure 7. Thermal Response − Junction to Case
50%
20%
10%
5.0%
1.0E−02 2.0%
1.0E−03 1.0%
1.0E−04
0.00001
Rtjl(t) = Rtjl*r(t)
0.0001
0.001
0.01
0.1
1.0
t, TIME (s)
Figure 8. Thermal Response − Junction to Ambient
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3
MBRS260T3
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE G
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
MIN
1.90
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.13
2.45
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
MIN
0.075
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.084
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.096
0.008
0.087
0.012
0.156
0.181
0.220
0.063
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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MBRS260T3/D
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