IXYS IXTA05N100 N-channel enhancement mode avalanche rated Datasheet

High Voltage
Power MOSFET
IXTA05N100HV
IXTA05N100
IXTP05N100
VDSS
ID25
RDS(on)
N-Channel Enhancement Mode
Avalanche Rated
=
=

1000V
750mA

17
TO-263HV (IXTA)
G
S
D (Tab)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25C to 150C
1000
V
VDGR
TJ = 25C to 150C, RGS = 1M
1000
V
VGSS
Continuous
30
V
VGSM
Transient
40
V
ID25
TC = 25C
750
mA
IDM
TC = 25C, Pulse Width Limited by TJM
3
A
IA
EAS
TC = 25C
TC = 25C
1
100
A
mJ
dv/dt
IS  IDM, VDD  VDSS, TJ 150C
3
V/ns
PD
TC = 25C
40
W
-55 ... +150
150
-55 ... +150
C
C
C
300
260
°C
°C
1.13 / 10
Nm/lb.in
3.0
2.5
2.5
g
g
g
TJ
TJM
Tstg
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Md
Mounting Torque (TO-220)
Weight
TO-220
TO-263
TO-263HV
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
G
DS
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features






High Voltage Package (TO-263HV)
Fast Switching Times
Avalanche Rated
Rds(on) HDMOSTM Process
Rugged Polysilicon Gate Cell structure
Extended FBSOA
Advantages
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVDSS
VGS = 0V, ID = 250A
1000
VGS(th)
VDS = VGS, ID = 250A
2.5
IGSS
VGS =  30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
RDS(on)
TJ = 125C
VGS = 10V, ID = 375mA, Note 1
© 2014 IXYS CORPORATION, All rights reserved


V
4.5
V
Applications
100 nA

25 A
500 A

17
High Power Density
Space Savings

Switch-Mode and Resonant-Mode
Power Supplies
Flyback Inverters
DC Choppers

DS98736F(5/14)
IXTA05N100HV IXTA05N100
IXTP05N100
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = 20V, ID = 500mA, Note 1
0.55
Ciss
Coss
VGS = 0V, VDS = 25V, f = 1MHz
Crss
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 47 (External)
Qg(on)
Qgs
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
Qgd
0.93
S
260
pF
22
pF
8
pF
11
ns
19
ns
40
ns
28
ns
7.8
nC
1.4
nC
4.1
nC
PIN: 1 - Gate
2,4 - Source
3 - Drain
3.1 C/W
RthJC
RthCS
TO-263AA Outline
(TO-220)
0.50
C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
750 mA
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = IS, -di/dt = 100A/s
VR = 100V, VGS = 0V
710
3
A
1.5
V
ns
TO-220AB Outline
Note 1: Pulse test, t  300s, duty cycle, d  2%.
TO-263HV Outline
Pins:
1 - Gate
3 - Source
2 - Drain
PIN: 1 - Gate
2 - Source
3 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA05N100HV IXTA05N100
IXTP05N100
Fig. 2. Output Characteristics @ TJ = 125ºC
Fig. 1. Output Characteristics @ TJ = 25ºC
0.9
1.6
VGS = 10V
8V
1.4
0.7
1.2
I D - Amperes
7V
I D - Amperes
VGS = 10V
7V
6V
0.8
1.0
6V
0.8
0.6
0.6
5.5V
0.5
0.4
0.3
5.5V
0.4
5V
0.2
5V
0.2
0.1
4.5V
0.0
0.0
0
5
10
15
20
25
30
0
5
10
VDS - Volts
15
20
25
30
VDS - Volts
Fig. 3. RDS(on) Normalized to ID = 375mA Value vs.
Junction Temperature
Fig. 4. RDS(on) Normalized to ID = 375mA Value vs.
Drain Current
2.6
3.0
VGS = 10V
VGS = 10V
2.4
2.6
TJ = 125ºC
RDS(on) - Normalized
RDS(on) - Normalized
2.2
2.2
1.8
I D = 750mA
1.4
I D = 375mA
2.0
1.8
1.6
1.4
1.0
1.2
0.6
TJ = 25ºC
1.0
0.8
0.2
-50
-25
0
25
50
75
100
125
0.0
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
I D - Amperes
TJ - Degrees Centigrade
Fig. 5. Maximum Drain Current vs.
Case Temperature
Fig. 6. Input Admittance
1.1
0.8
1.0
0.7
0.8
0.5
0.7
I D - Amperes
I D - Amperes
0.9
0.6
0.4
0.3
0.6
0.5
TJ = 125ºC
25ºC
- 40ºC
0.4
0.3
0.2
0.2
0.1
0.1
0.0
0.0
-50
-25
0
25
50
75
TC - Degrees Centigrade
© 2014 IXYS CORPORATION, All rights reserved
100
125
150
3.0
3.5
4.0
4.5
VGS - Volts
5.0
5.5
6.0
6.5
IXTA05N100HV IXTA05N100
IXTP05N100
Fig. 7. Transconductance
Fig. 8. Forward Voltage Drop of Intrinsic Diode
1.6
2.4
TJ = - 40ºC
1.4
2.0
25ºC
I S - Amperes
g f s - Siemens
1.2
1.0
125ºC
0.8
0.6
1.6
1.2
0.8
TJ = 125ºC
0.4
TJ = 25ºC
0.4
0.2
0.0
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.4
0.45
0.5
0.55
I D - Amperes
0.6
0.65
0.7
0.75
0.8
0.85
0.9
VSD - Volts
Fig. 9. Gate Charge
Fig. 10. Capacitance
10
1,000
f = 1 MHz
VDS = 500V
9
8
Capacitance - PicoFarads
I D = 1A
I G = 1mA
VGS - Volts
7
6
5
4
3
C iss
100
Coss
10
Crss
2
1
1
0
0
1
2
3
4
5
6
7
0
8
5
10
QG - NanoCoulombs
15
20
25
30
35
40
VDS - Volts
Fig. 12. Forward-Bias Safe Operating Area @ T C = 75ºC
Fig. 11. Forward-Bias Safe Operating Area @ T C = 25ºC
10
10
RDS(on) Limit
RDS(on) Limit
25µs
100µs
1ms
0.1
10ms
1
I C - Amperes
I C - Amperes
1
100µs
1ms
0.1
10ms
100ms
TJ = 150ºC
TC = 25ºC
Single Pulse
TJ = 150ºC
TC = 75ºC
Single Pulse
DC
0.01
100ms
DC
0.01
10
100
1,000
VCE - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
10
100
VCE - Volts
1,000
IXTA05N100HV IXTA05N100
IXTP05N100
Fig. 13. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
10
1
0.1
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2014 IXYS CORPORATION, All rights reserved
IXYS REF: T_05N100(1T) 5-13-14-A
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