MCC MMBTA13 Npn darlington amplifier transistor Datasheet

MCC
MMBTA13
MMBTA14
R
Micro Commercial Components
omponents
20736 Marilla Street Chatsworth
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$ % !"#
Features
•
•
•
•
•
•
Operating And Storage Temperatures –55OC to +150OC
RθJA is 556OC/W (Mounted on FR-5 PCB 1.0” x0.75” x0.062” )
Capable of 225mWatts of Power Dissipation
Halogen free available upon request by adding suffix "-HF"
Marking: MMBTA13 ---K2D or 1M; MMBTA14 ---K3D or 1N
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
•
•
NPN Darlington
Amplifier Transistor
SOT-23
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
A
OFF CHARACTERISTICS
30
Vdc
V (BR)CBO
Collector-Emitter Breakdown Voltage*
(IC=100uAdc, IB =0)
Collector-Base Breakdown Voltage
30
Vdc
V (BR)EBO
Emitter-Base Breakdown Voltage
10
Vdc
IC
Collector Current-Continuous
300
mAdc
ICBO
Collector Cutoff Current
(VCB =30Vdc, IE =0)
Emitter Cutoff Current
(VEB =10Vdc, IC=0)
V (BR)CEO
IEBO
D
C
F
100
nAdc
100
nAdc
MMBTA13
MMBTA14
V CE(sat)
(IC=150mAdc, V CE=1.0Vdc)
H
5000
10000
Cibo
10000
20000
Collector-Emitter Saturation Voltage
(IC=100mAdc, IB =0.1mAdc)
Base-Emitter Saturation Voltage
(IC=100mAdc,V CE=5.0Vdc)
1.5
Vdc
2.0
Vdc
Current Gain-Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=100MHz)
125
MHz
Output Capacitance
(VCB=10Vdc, IE =0, f=1.0MHz)
8.0
pF
Input Capacitance
(VBE =0.5Vdc, IC=0, f=1.0MHz)
15
pF
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
MAX
.110
.120
.083
104
.047
.055
.035
.041
.070
.081
.018
.024
.0005
.0039
.035
.044
.003
.007
.015
.020
NOTE
Delay Time
Rise Time
Storage Time
Fall Time
(V CC=30Vdc, VBE =0.5Vdc
IC=150mAdc, IB1=15mAdc)
(V CC=30Vdc, IC=150mAdc
IB1=IB2=15mAdc)
10
25
225
60
ns
ns
ns
ns
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
Suggested Solder
Pad Layout
.031
.800
.035
.900
SWITCHING CHARACTERISTICS
td
tr
ts
tf
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
J
DIMENSIONS
SMALL-SIGNAL CHARACTERISTICS
Cobo
E
DC Current Gain*
(IC=10mAdc, VCE=5.0Vdc)
fT
B
K
MMBTA13
MMBTA14
V BE(sat)
B
E
G
ON CHARACTERISTICS
hFE
C
.079
2.000
.037
.950
inches
mm
.037
.950
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500
i n, NOISE CURRENT (pA)
200
en, NOISE VOLTAGE (nV)
2.0
BANDWIDTH = 1.0 Hz
RS ≈ 0
100
10 µA
50
100 µA
20
5.0
IC = 1.0 mA
0.3
0.2
0.1
0.07
0.05
IC = 1.0 mA
10
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5
100 µA
10 µA
0.03
10 20
50 100 200
500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk
f, FREQUENCY (Hz)
50Ăk 100Ăk
0.02
10 20
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk
f, FREQUENCY (Hz)
Figure 2. Noise Voltage
Figure 3. Noise Current
14
BANDWIDTH = 10 Hz TO 15.7 kHz
70
IC = 10 µA
50
30
100 µA
20
1.0 mA
10
1.0
2.0
10
10 µA
8.0
100 µA
6.0
4.0
IC = 1.0 mA
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
1000
Figure 4. Total Wideband Noise Voltage
Revision: C
BANDWIDTH = 10 Hz TO 15.7 kHz
12
NF, NOISE FIGURE (dB)
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
200
100
50Ăk 100Ăk
0
1.0
2.0
5.0
10
20
50 100 200
RS, SOURCE RESISTANCE (kΩ)
500
1000
Figure 5. Wideband Noise Figure
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MMBTA13
MMBTA14
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4.0
|h fe |, SMALL-SIGNAL CURRENT GAIN
C, CAPACITANCE (pF)
20
TJ = 255C
10
7.0
Cibo
Cobo
5.0
3.0
2.0
0.04
0.1
0.2
0.4
1.0 2.0 4.0
VR, REVERSE VOLTAGE (VOLTS)
10
20
2.0
0.6
0.4
0.2
0.5
40
30Ăk
20Ăk
-ā555C
VCE = 5.0 V
3.0Ăk
2.0Ăk
5.0 7.0
10
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
2.5
RθV, TEMPERATURE COEFFICIENTS (mV/5C)
V, VOLTAGE (VOLTS)
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
VCE(sat) @ IC/IB = 1000
10
20 30
50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
IC = 10 mA
50 mA
250 mA
500 mA
1.5
1.0
0.5
0.1 0.2
0.5 1.0 2.0 5.0 10 20 50 100 200
IB, BASE CURRENT (µA)
500 1000
Figure 9. Collector Saturation Region
TJ = 255C
5.0 7.0
500
2.0
500
1.6
0.6
0.5 10 20
50
100 200
IC, COLLECTOR CURRENT (mA)
TJ = 255C
Figure 8. DC Current Gain
0.8
2.0
3.0
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
255C
10Ăk
7.0Ăk
5.0Ăk
1.0
Figure 7. High Frequency Current Gain
TJ = 1255C
100Ăk
70Ăk
50Ăk
VCE = 5.0 V
f = 100 MHz
TJ = 255C
1.0
0.8
Figure 6. Capacitance
200Ăk
R
500
-ā1.0
-ā2.0
*APPLIES FOR IC/IB 3 hFE/3.0
255C TO 1255C
*RqVC FOR VCE(sat)
-ā555C TO 255C
-ā3.0
255C TO 1255C
-ā4.0
qVB FOR VBE
-ā5.0
-ā555C TO 255C
-ā6.0
5.0 7.0 10
Figure 10. “On” Voltages
20 30
50 70 100
200 300
IC, COLLECTOR CURRENT (mA)
500
Figure 11. Temperature Coefficients
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r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
MMBTA13
MMBTA14
1.0
0.7
0.5
0.3
R
Micro Commercial Components
D = 0.5
0.2
0.2
0.1
0.05
SINGLE PULSE
0.1
0.07
0.05
SINGLE PULSE
0.03
ZθJC(t) = r(t) • RθJCąTJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) • RθJAąTJ(pk) - TA = P(pk) ZθJA(t)
0.02
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
t, TIME (ms)
100
200
500
1.0Ăk
2.0Ăk
5.0Ăk
10Ăk
Figure 12. Thermal Response
IC, COLLECTOR CURRENT (mA)
1.0Ăk
700
500
300
200
FIGURE A
1.0 ms
TA = 25°C
tP
TC = 25°C
100 µs
PP
1.0 s
100
70
50
PP
t1
30
20
10
0.4 0.6
CURRENT LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
1.0
2.0
4.0 6.0
10
20
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 13. Active Region Safe Operating Area
1/f
t
DUTYĂCYCLE + t1Ăf + 1
tP
PEAK PULSE POWER = PP
40
Design Note: Use of Transient Thermal Resistance Data
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Ordering Information :
Device
Packing
Tape&Reel:3Kpcs/Reel
Part Number-TP
Note : Adding "-HF" suffix for halogen free, eg. Part Number-TP-HF
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approval of Micro Commercial Components Corporation.
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customers to purchase MCC parts either directly from MCC or from Authorized MCC Distributors who are listed by country on
our web page cited below. Products customers buy either from MCC directly or from Authorized MCC Distributors are genuine
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