Microsemi LX5512E Ingap hbt 2.4 â 2.5 ghz power amplifier Datasheet

LX5512E
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
KEY FEATURES
DESCRIPTION
For 19dBm OFDM output power
(64QAM, 54Mbps), the PA provides a
low EVM (Error-Vector Magnitude) of
3 %, and consumes 130 mA total DC
current.
The LX5512E is available in a 16-pin
3mmx3mm micro-lead package (MLP).
The compact footprint, low profile, and
excellent thermal capability of the MLP
package makes the LX5512E an ideal
solution for high-gain power amplifier
requirements for IEEE 802.11b/g
applications.
ƒ
ƒ
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ƒ
ƒ
ƒ
ƒ
ƒ
Advanced InGaP HBT
2.4 – 2.5GHz Operation
Single-Polarity 3.3V Supply
Low Quiescent Current Icq
~50mA
Power Gain ~34dB @ 2.45GHz
and Pout = 19dBm
Total Current 130mA for Pout =
19dBm @ 2.45GHz OFDM
EVM ~ 3.0% for 64QAM /
54Mbps and Pout = 19dBm
Small Footprint (3 x 3 mm2)
Low Profile (0.9mm)
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The LX5512E is a power amplifier
optimized for WLAN applications in
the 2.4-2.5 GHz frequency range. The
PA is implemented as a three-stage
monolithic microwave integrated
circuit (MMIC) with active bias and
input/output pre-matching. The device
is manufactured with an InGaP/GaAs
Heterojunction Bipolar Transistor
(HBT) IC process (MOCVD). It
operates at a single low voltage supply
of 3.3V with 34 dB power gain
between 2.4-2.5GHz, at a low
quiescent current of 50 mA.
APPLICATIONS
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
ƒ IEEE 802.11b/g
PRODUCT HIGHLIGHT
PACKAGE ORDER INFO
Plastic MLPQ
16 pin
LX5512E
LQ
RoHS Compliant / Pb-free
Transition DC: 0418
LX5512ELQ
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5512ELQ-TR)
This device is classified as ESD Level 0 in
accordance with JESD22-A114-B, (HBM) testing.
Appropriate ESD procedures should be observed
when handling this device.
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5512E
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
ABSOLUTE MAXIMUM RATINGS
PACKAGE PIN OUT
N.C.
VC1
13
14
15
16
VC3
12
1
N.C.
RF OUT
11
2
RF IN
RF OUT
10
3
RF IN
9
4
VB1
DET PWR
7
6
VB3
VB2
5
VCC
8
N.C.
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
*
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VC2
Peak Package Solder Reflow Temp (40 seconds maximum exposure) ......... 260°C (+0, -5)
N.C.
DC Supply Voltage, RF off ...............................................................................6V
Collector Current ........................................................................................400mA
Total Power Dissipation....................................................................................2W
RF Input Power............................................................................................. 5dBm
Operation Ambient Temperature ...................................................-40°C to +85°C
Storage Temperature....................................................................-65°C to +150°C
* Pad is GND
THERMAL DATA
LQ PACKAGE
LQ
(Bottom View)
Plastic MLPQ 16-Pin
THERMAL RESISTANCE-JUNCTION TO CASE, θJC
10°C/W
50°C/W
THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA
N.C. – No internal connection
RoHS / Pb-free 100% Matte Tin Lead Finish
FUNCTIONAL PIN DESCRIPTION
Name
Description
RF IN
RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the
first stage.
VB1
Bias current control voltage for the first stage.
VB2
Bias current control voltage for the second stage
VB3
Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage
control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor
bridge.
VCC
Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10
nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting
in a single supply voltage (referred to as Vc).
RF OUT
RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage..
Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor,
followed by a 10 Ohm resistor
VC2
Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass
capacitor, followed by a 5 Ohm resistor
VC3
Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass
capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred
to as Vc
DET_PWR
GND
Copyright © 2003
Rev. 2.0c, 2005-08-18
Power detector output-coupled pin should be terminated with a 100 kOhm loading resistor
The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the
power amplifier..
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
PACKAGE DATA
VC1
LX5512E
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
Parameter
Symbol
Frequency Range
Power Gain at Pout = 19dBm
EVM at Pout = 19dBm
Total Current at Pout = 19dBm
Quiescent Current
Bias Control Reference Current
Small-Signal Gain
Gain Flatness
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Reverse Isolation
Second Harmonic
Third Harmonic
Total Current at Pout=23dBm
nd
2 side lobe at 23 dBm
Ramp-On Time
Detector response
f
Gp
Test Conditions
Min
2.4
64GQAM / 54Mbps
Ic_total
Icq
Iref
S21
ΔS21
ΔS21
S11
S22
S12
tON
LX5512E
Typ
Max
For Icq = 50mA
Over 100MHz
0°C to +70°C
Pout = 19dBm
Pout = 19dbm
11 Mbps CCK
11 Mbps CCK
10 ~ 90%
19 dBm OFDM, 100kOhm’s
2.5
34
3.0
130
50
1.6
34
1.5
1.5
8
10
-50
-40
-40
200
-50
100
1.5
Units
GHz
dB
%
mA
mA
mA
dB
dB
dB
dB
dB
dB
dBc
dBc
mA
dBc
ns
V
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ELECTRICAL CHARACTERISTICS
Test conditions: Vc = 3.3V, Vref = 2.9V, Icq = 50mA, TA = 25°C, unless otherwise specified
Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink.
ELECTRICALS
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5512E
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
CHARACTERISTIC CURVES
dB(S(2,2))
dB(S(1,1))
dB(S(2,1))
dB(S(1,2))
WWW . Microsemi .C OM
50
40
m1
m7
freq=2.400GHz
freq=2.500GHz
dB(S(2,1))=33.462
dB(S(2,1))=35.376
m1 m7
30
20
10
0
-10
-20
-30
-40
-50
2.0
2.2
2.4
2.6
2.8
3.0
freq, GHz
Figure 1 – S-Parameter
(VC = 3.3V, VREF = 2.9V, Icq = 50mA)
2.4 GHz
2.45 GHz
2.5 GHz
7
6
EVM_PA /[%]
5
4
3
2
GRAPHS
1
0
0
2
4
6
8
10
12
14
16
18
20
22
Output Power /[dBm]
Figure 2 – EVM with 54Mb/s 64 QAM OFDM
(Vc = 3.3V, Vref = 2.9V, Icq = 50mA)
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5512E
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
CHARACTERISTIC CURVES
2.45 GHz
WWW . Microsemi .C OM
2.4 GHz
2.5 GHZ
-45
ACP_30 MHz /[dBc]
-47.5
-50
-52.5
-55
-57.5
-60
0
2
4
6
8
10
12
14
16
18
20
22
Output Power /[dBm]
Figure 3 – ACP with 54MB/s 64 QAM OFDM
(VC = 3.3V, Vref = 2.9V, Icq = 50mA)
2.4 GHz
2.45 GHZ
2.5 GHZ
175
CURRENT_3.3V /mA
150
125
100
75
GRAPHS
50
0
2
4
6
8
10
12
14
16
18
20
22
Output Power /[dBm]
Figure 4 – Current with 54MB/s 64 QAM OFDM
(VC = 3.3V, Vref = 2.9V, Icq = 50mA)
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5512E
®
TM
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
CHARACTERISTIC CURVES
WWW . Microsemi .C OM
Figure 5 – Spectrum with 23dBm 11Mb/s CCK
(Vc = 3.3V, Vref = 2.9V, Icq = 50mA, Ic = 202mA, Frequency = 2.45GHz)
50
40
m1
m7
freq=2.400GHz
freq=2.500GHz
dB(S(2,1))=34.020
dB(S(2,1))=35.911
m1 m7
dB(S(2,2))
dB(S(1,1))
dB(S(2,1))
dB(S(1,2))
30
20
10
0
-10
-20
-30
GRAPHS
-40
-50
2.0
2.2
2.4
2.6
2.8
3.0
freq, GHz
Figure 6 – S-Parameter
(VC = 5.0V, VREF = 2.9V, Icq = 55mA)
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5512E
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
CHARACTERISTIC CURVES
2.45 GHz
WWW . Microsemi .C OM
2.4 GHz
2.5 GHz
4
3.5
EVM_PA /[%]
3
2.5
2
1.5
1
0.5
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Power /[dBm]
Figure 7 – EVM with 54Mb/s 64QAM OFDM
(Vc = 5V, Vref = 2.9V, Icq =55mA,)
2.4 GHz
2.45 GHz
2.5 GHZ
-45
ACP_30 MHz /[dBc]
-47.5
-50
-52.5
-55
-57.5
GRAPHS
-60
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Power /[dBm]
Figure 8 – ACP Data with 54Mb/s 64 QAM OFDM
(Vc = 5V, Vref = 2.9V, Icq = 55mA)
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
LX5512E
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
CHARACTERISTIC CURVES
2.45 GHZ
WWW . Microsemi .C OM
2.4 GHz
2.5 GHZ
225
CURRENT_5.0V /mA
200
175
150
125
100
75
50
0
2
4
6
8
10
12
14
16
18
20
22
24
Output Power /[dBm]
Figure 9 – Current with 54MB/s 64 QAM OFDM
(VC = 5.0V, Vref = 2.9V, Icq = 55mA)
GRAPHS
Figure 10 – Spectrum with 25dBm 11Mb/s CCK
(Vc = 5V, Vref = 2.9V, Icq = 55mA, Ic = 258mA, Frequency = 2.45GHz)
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8
LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
EVALUATION BOARD
R1,R2
R3
R4
R5
R6
R7
TL1
TL2
TL3
Substrate
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Location
C1,C3
C2
C4
C5,C7
C6
Recommended BOM
Value
1 uF (0603)
10 nF(0402)
2.2 pF (0402)
120 pF (0402)
47 pF (0402)
50 Ω (0402)
300 Ω (0402)
100 Ω (0402)
10 Ω (0402)
5 Ω (0402)
100 kΩ (0402)
120/10 mil (L/W)
30/10 mil (L/W)
70/10 mil (L/W)
10 mil GETEK
εr = 3.9, tan δ = 0.01
50Ω Microstrip width: 22 mil
EVALUATION BOARD
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 9
LX5512E
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
®
TM
P RODUCTION D ATA S HEET
PACKAGE DIMENSIONS
16-Pin MLPQ 3x3
D
b
E2
L
D2
E
or
e
K
A
A1
or
Pin 1 Indicator
A3
Or
Dim
A
A1
A3
b
D
E
e
D2
E2
K
L
L1
MILLIMETERS
MIN
MAX
0.80
1.00
0
0.05
0.20 REF
0.18
0.30
3.00 BSC
3.00 BSC
0.50 BSC
1.30
1.55
1.30
1.55
0.2
0.35
0.50
0.15
INCHES
MIN
MAX
0.031
0.039
0
0.002
0.008 REF
0.007
0.012
0.118 BSC
0.118 BSC
0.020 BSC
0.051
0.061
0.051
0.061
0.008
0.012
0.020
0.006
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LQ
Note:
1.
D
E2
b
L
2.
Dimensions do not include mold flash or
protrusions; these shall not exceed 0.155mm(.006”)
on any side. Lead dimension shall not include
solder coverage.
Due to multiple qualified assembly sub-contractors
either package (with different pin one indicators)
may be shipped. Package type will be consistent
within the smallest individual container.
D2
E
L1
e
A1
A
K
MECHANICALS
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 10
LX5512E
TM
®
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
P RODUCTION D ATA S HEET
NOTES
WWW . Microsemi .C OM
NOTES
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reserves the right to change the
configuration and performance of the product and to discontinue product at any time.
Copyright © 2003
Rev. 2.0c, 2005-08-18
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 11
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