Zetex FMMT4403 Sot23 pnp silicon planar general purpose transistor Datasheet

FMMT4402
FMMT4403
SWITCHING CHARACTERISTICS (at Tamb= 25°C )
PARAMETER
SYMBOL
Turn-On Time
ton
Turn-Off Time
t off
MIN.
MAX.
UNIT
CONDITIONS
35
ns
VCC=-30V, VBE(off)=-2V
IC=-150mA, IB1=-15mA
(See Fig.1)
255
ns
VCC=-30V, IC=-150mA
IB1=IB2=-15mA
(See Fig. 2)
SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 2 - MARCH 1995
FMMT4402
FMMT4403
✪
PARTMARKING DETAILS:
FMMT4402 - 2K
FMMT4403 - 2L
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-600
A
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
FMMT4402
PARAMETER
SYMBOL
MIN.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-40
-40
V
IC=-1mA, IB=0
Collector-Base
Breakdown Voltage
V(BR)CBO
-40
-40
V
IC=-0.1mA, IE=0
Emitter-Base
Breakdown Current
V(BR)EBO
-5
-5
V
IE=-0.1mA, IC=0
Collector-Emitter
Cut-Off Current
ICEX
-0.1
-0.1
µA VCE=-35V
Base Cut-Off
Current
IBEX
-0.1
-0.1
µA VCE=-35V
Static Forward
Current
TransferRatio
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-0.75
Transition
Frequency
fT
150
Output Capacitance
Cobo
8.5
8.5
pF VCB=-10 V,IE=0
f=100kHz
Input Capacitance
Cibo
30
30
pF VBE=0.5V
IC=0, f=100kHz
30
50
50
20
MAX.
FMMT4403
150
MIN.
30
60
100
100
20
-0.4
-0.75
-0.95
-1.3
-0.75
MAX.
VEB(off) =-0.4V
IC=-0.1mA, VCE=-1V
IC=-1mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-150mA,VCE=-2V*
IC=-500mA,VCE=-2V*
-0.4
-0.75
V
V
IC=-150mA,IB=-15mA*
IC=-500mA,IB=-50mA*
-0.95
-1.3
V
V
IC=-150mA,IB=-15mA*
IC=-500mA,IB=-50mA
200
PAGE NUMBER
VEB(off) =-0.4V
300
MHz IC=-20mA,VCE=-10V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
UNIT CONDITIONS
FMMT4402
FMMT4403
SWITCHING CHARACTERISTICS (at Tamb= 25°C )
PARAMETER
SYMBOL
Turn-On Time
ton
Turn-Off Time
t off
MIN.
MAX.
UNIT
CONDITIONS
35
ns
VCC=-30V, VBE(off)=-2V
IC=-150mA, IB1=-15mA
(See Fig.1)
255
ns
VCC=-30V, IC=-150mA
IB1=IB2=-15mA
(See Fig. 2)
SOT23 PNP SILICON PLANAR
GENERAL PURPOSE TRANSISTOR
ISSUE 2 - MARCH 1995
FMMT4402
FMMT4403
✪
PARTMARKING DETAILS:
FMMT4402 - 2K
FMMT4403 - 2L
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-600
A
Power Dissipation at Tamb=25°C
Ptot
330
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)
FMMT4402
PARAMETER
SYMBOL
MIN.
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-40
-40
V
IC=-1mA, IB=0
Collector-Base
Breakdown Voltage
V(BR)CBO
-40
-40
V
IC=-0.1mA, IE=0
Emitter-Base
Breakdown Current
V(BR)EBO
-5
-5
V
IE=-0.1mA, IC=0
Collector-Emitter
Cut-Off Current
ICEX
-0.1
-0.1
µA VCE=-35V
Base Cut-Off
Current
IBEX
-0.1
-0.1
µA VCE=-35V
Static Forward
Current
TransferRatio
hFE
Collector-Emitter
Saturation Voltage
VCE(sat)
Base-Emitter
Saturation Voltage
VBE(sat)
-0.75
Transition
Frequency
fT
150
Output Capacitance
Cobo
8.5
8.5
pF VCB=-10 V,IE=0
f=100kHz
Input Capacitance
Cibo
30
30
pF VBE=0.5V
IC=0, f=100kHz
30
50
50
20
MAX.
FMMT4403
150
MIN.
30
60
100
100
20
-0.4
-0.75
-0.95
-1.3
-0.75
MAX.
VEB(off) =-0.4V
IC=-0.1mA, VCE=-1V
IC=-1mA, VCE=-1V
IC=-10mA, VCE=-1V
IC=-150mA,VCE=-2V*
IC=-500mA,VCE=-2V*
-0.4
-0.75
V
V
IC=-150mA,IB=-15mA*
IC=-500mA,IB=-50mA*
-0.95
-1.3
V
V
IC=-150mA,IB=-15mA*
IC=-500mA,IB=-50mA
200
PAGE NUMBER
VEB(off) =-0.4V
300
MHz IC=-20mA,VCE=-10V
f=100MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
PAGE NUMBER
UNIT CONDITIONS
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