Fairchild FDU6N50 500v n-channel mosfet Datasheet

UniFET
TM
FDD6N50/FDU6N50
500V N-Channel MOSFET
Features
Description
• 6A, 500V, RDS(on) = 0.9Ω @VGS = 10 V
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
• Low gate charge ( typical 12.8 nC)
• Low Crss ( typical 9 pF)
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
D
D
G
S
G
D-PAK
I-PAK
FDD Series
FDU Series
G D S
S
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
IDM
Drain Current
- Pulsed
VGSS
Gate-Source voltage
EAS
IAR
FDD6N50/FDU6N50
Unit
500
V
6
3.8
A
A
24
A
±30
V
Single Pulsed Avalanche Energy
(Note 2)
270
mJ
Avalanche Current
(Note 1)
6
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
89
0.71
W
W/°C
-55 to +150
°C
300
°C
(Note 1)
(TC = 25°C)
- Derate above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
Parameter
Min.
Max.
Unit
RθJC
Thermal Resistance, Junction-to-Case
--
1.4
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
--
83
°C/W
©2006 Fairchild Semiconductor Corporation
FDD6N50/FDU6N50 REV. A
1
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FDD6N50/FDU6N50 500V N-Channel MOSFET
January 2006
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDD6N50
FDD6N50TM
D-PAK
380mm
16mm
2500
FDD6N50
FDD6N50TF
D-PAK
380mm
16mm
2000
FDU6N50
FDU6N50TU
I-PAK
-
-
70
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max Units
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
VDS = 400V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
V
--
0.76
0.9
Ω
--
2.5
--
S
--
720
940
pF
--
95
190
pF
--
9
13.5
pF
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 3A
gFS
Forward Transconductance
VDS = 40V, ID = 3A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,
f = 1.0MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 6A
RG = 25Ω
(Note 4, 5)
VDS = 400V, ID = 6A
VGS = 10V
(Note 4, 5)
--
6
20
ns
--
55
120
ns
--
25
60
ns
--
35
80
ns
--
12.8
16.6
nC
--
3.7
--
nC
--
5.8
--
nC
6
A
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
24
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 6A
--
--
1.4
V
trr
Reverse Recovery Time
275
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 6A
dIF/dt =100A/µs
--
Qrr
--
1.7
--
µC
(Note 4)
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 6A, VDD = 50V, L=13.5mH, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 6A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD6N50/FDU6N50 REV. A
2
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FDD6N50/FDU6N50 500V N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Top :
ID, Drain Current [A]
15
Bottom :
VGS
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
1
10
ID , Drain Current [A]
20
Figure 2. Transfer Characteristics
10
∝ Notes :
1. 250レs Pulse Test
2. TC = 25∩
5
0
0
10
20
30
40
150∩
0
10
25∩
-55∩
-1
10
∝ Note
1. VDS = 40V
2. 250レs Pulse Test
-2
50
10
2
VDS, Drain-Source Voltage [V]
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.5
IDR , Reverse Drain Current [A]
RDS(ON) [ヘ ],Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
VGS = 10V
1.5
VGS = 20V
1.0
0.5
1
10
0
10
150∩
25∩
∝ Notes :
1. VGS = 0V
2. 250レs Pulse Test
∝ Note : TJ = 25∩
0.0
-1
0
5
10
15
10
20
0.2
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Crss
∝ Notes :
1. VGS = 0 V
2. f = 1 MHz
10
10
1.4
1.6
1.8
VDS = 400V
8
6
4
2
∝ Note : ID = 6A
0
5
10
15
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
FDD6N50/FDU6N50 REV. A
1.2
VDS = 250V
10
0
1
10
1.0
VDS = 100V
Coss
0
0.8
12
Ciss
100
0.6
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
0.4
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
4
3
www.fairchildsemi.com
FDD6N50/FDU6N50 500V N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
♦ Notes :
0.9
1. VGS = 0 V
2. ID = 250 µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
♦ Notes :
0.5
1. VGS = 10 V
2. ID = 3 A
0.0
-100
200
-50
o
TJ, Junction Temperature [ C]
2
50
100
150
200
o
Figure 9. Maximum Safe Operating Area
10
0
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
8
Operation in This Area
is Limited by R DS(on)
6
100 us
ID, Drain Current [A]
ID, Drain Current [A]
10 us
1
10
1 ms
10 ms
DC
0
10
∝ Notes :
-1
10
o
1. TC = 25 C
4
2
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
1
10
2
10
0
25
3
10
10
50
VDS, Drain-Source Voltage [V]
75
100
125
150
TC, Case Temperature [∩ ]
Figure 11. Transient Thermal Response Curve
Zヨ JC(t), Thermal Response
10
0
D = 0 .5
0 .2
∝ N o te s :
1 . Z ヨ J C(t) = 1 .4 ∩ /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T JM - T C = P D M * Z ヨ J C(t)
0 .1
10
-1
0 .0 5
0 .0 2
PDM
0 .0 1
t1
s in g le p u ls e
10
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FDD6N50/FDU6N50 REV. A
4
www.fairchildsemi.com
FDD6N50/FDU6N50 500V N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDD6N50/FDU6N50 500V N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD6N50/FDU6N50 REV. A
5
www.fairchildsemi.com
FDD6N50/FDU6N50 500V N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDD6N50/FDU6N50 REV. A
6
www.fairchildsemi.com
FDD6N50/FDU6N50 500V N-Channel MOSFET
Mechanical Dimensions
D-PAK
Dimensions in Millimeters
FDD6N50/FDU6N50 REV. A
7
www.fairchildsemi.com
FDD6N50/FDU6N50 500V N-Channel MOSFET
Mechanical Dimensions
(Continued)
I-PAK
Dimensions in Millimeters
FDD6N50/FDU6N50 REV. A
8
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
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This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18
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