Renesas H7N0602LD-E Silicon n channel mos fet high speed power switching Datasheet

H7N0602LD, H7N0602LS, H7N0602LM
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1130-0600
Rev.6.00
Oct 16, 2006
Features
• Low on-resistance
RDS (on) = 4.1 mΩ typ.
• 4.5 V gate drive devices
• High Speed Switching
Outline
RENESAS Package code: PRSS0004AE-A
(Package name: LDPAK (L) )
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
4
1. Gate
2. Drain
3. Source
4. Drain
1
1
2
2
3
3
H7N0602LD
H7N0602LS
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
D
4
G
1
2
3
H7N0602LM
Rev.6.00 Oct 16, 2006 page 1 of 8
S
H7N0602LD, H7N0602LS, H7N0602LM
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Symbol
VDSS
VGSS
ID
ID (pulse) Note 1
IDR
IAP Note 3
EAR Note 3
Pch Note 2
Tch
Tstg
Value
60
±20
85
340
85
65
362
100
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note:
4. Pulse test
Rev.6.00 Oct 16, 2006 page 2 of 8
Symbol
V (BR) DSS
V (BR) GSS
IDSS
IGSS
VGS (off)
|yfs|
RDS (on)
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td (off)
tf
VDF
trr
Min
60
±20
—
—
1.5
70
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
120
4.1
6.2
9000
1000
470
140
30
30
55
290
140
50
0.95
45
Max
—
—
10
±10
2.5
—
5.2
9.0
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 60 V, VGS = 0
VGS = ±16 V, VDS = 0
VDS = 10 V, ID = 1 mA Note 4
ID = 45 A, VDS = 10 V Note 4
ID = 45 A, VGS = 10 V Note 4
ID = 45 A, VGS = 4.5 V Note 4
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 25 V
VGS = 10 V
ID = 85 A
VGS = 10 V
ID = 45 A
RL = 0.67 Ω
Rg = 4.7 Ω
IF = 85 A, VGS = 0
IF = 85 A, VGS = 0
diF/dt = 100 A/µs
H7N0602LD, H7N0602LS, H7N0602LM
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
ID (A)
300
120
Drain Current
Channel Dissipation
Pch (W)
160
80
40
50
100
150
Case Temperature
Operation in
this area is
1 limited by RDS(on)
3
3
10
80
3.5 V
40
VDS (V)
160
80
40
Tc = 75°C
25°C
–25°C
VGS = 3 V
0
0
2
4
6
Drain to Source Voltage
8
0
10
VDS (V)
Pulse Test
400
300
ID = 50 A
100
20 A
10 A
0
0
4
8
12
16
20
Gate to Source Voltage VGS (V)
Rev.6.00 Oct 16, 2006 page 3 of 8
2
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS(on) (mΩ)
Drain to Source Saturation Voltage
VDS(on) (mV)
500
1
Gate to Source Voltage
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
200
100
120
4V
0
30
VDS = 10 V
Pulse Test
4.5 V
ID (A)
160
1
200
Pulse Test
6V
0.3
Typical Transfer Characteristics
Drain Current
ID (A)
10 V
120
Drain Current
PW = 10 ms
(1shot)
Drain to Source Voltage
Tc (°C)
Typical Output Characteristics
200
µs
DC Operation
(Tc = 25°C)
10
0.1
0.1
200
µs
30
Ta = 25°C
0
0
s
100
0.3
0
10
10
1m
100
Pulse Test
30
10
VGS = 4.5 V
10 V
3
1
1
3
10
30
100
300
Drain Current ID (A)
1000
H7N0602LD, H7N0602LS, H7N0602LM
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
50 A
12
ID = 10, 20 A
8
VGS = 4.5 V
4
10, 20, 50 A
10 V
0
–50
0
50
100
Case Temperature
150
200
1000
Tc = –25°C
300
100
25°C
30
75°C
10
3
VDS = 10 V
Pulse Test
1
1
3
Tc (°C)
Capacitance C (pF)
Reverse Recovery Time trr (ns)
30
10
3000
1000
Coss
1
0.1
100
10
30
Reverse Drain Current
Ciss
10000
300
3
100
VGS = 0
f = 1 MHz
0
10
12
40
8
20
VDD = 50 V
25 V
10 V
0
0
40
80
120
160
Gate Charge Qg (nc)
Rev.6.00 Oct 16, 2006 page 4 of 8
30
40
50
4
0
200
1000
tf
Switching Time t (ns)
VDD = 50 V
25 V
10 V
60 V
DS
16
VGS (V)
20
ID = 85 A
VGS
20
Switching Characteristics
Gate to Source Voltage
Drain to Source Voltage
VDS (V)
Dynamic Input Characteristics
80
Crss
Drain to Source Voltage VDS (V)
IDR (A)
100
1000
30000
3
1
300
100000
100
0.3
100
Typical Capacitance vs.
Drain to Source Voltage
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
300
30
Drain Current ID (A)
Body to Drain Diode Reverse
Recovery Time
1000
10
tr
300
100
30
td(off)
td(on)
tr
tf
10
3
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
Rg = 4.7 Ω
1
0.1
0.3
1
3
Drain Current
10
30
ID (A)
100
H7N0602LD, H7N0602LS, H7N0602LM
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current
IDR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
200
10 V
160
120
80
5V
VGS = 0, –5 V
40
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
500
IAP = 65 A
VDD = 25 V
duty < 0.1 %
Rg ≥ 50 Ω
400
300
200
100
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
θch – c (t) = γ s (t) • θch – c
0.1
0.1
θch – c = 1.25°C/W, Tc = 25°C
0.05
PDM
0.02
0.03
D=
1
0.0 pulse
t
ho
1s
0.01
10 µ
PW
T
PW
T
100 µ
1m
10 m
100 m
10
1
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
15 V
50 Ω
0
Rev.6.00 Oct 16, 2006 page 5 of 8
VDD
H7N0602LD, H7N0602LS, H7N0602LM
Switching Time Test Circuit
Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Rg
Vin
Vout
Vin
10 V
VDS
= 30 V
10%
10%
90%
td(on)
Rev.6.00 Oct 16, 2006 page 6 of 8
10%
RL
tr
90%
td(off)
tf
H7N0602LD, H7N0602LS, H7N0602LM
Package Dimensions
RENESAS Code
PRSS0004AE-A
MASS[Typ.]
1.40g
4.44 ± 0.2
1.3 ± 0.15
1.3 ± 0.2
1.37 ± 0.2
0.76 ± 0.1
2.54 ± 0.5
2.54 ± 0.5
JEITA Package Code
SC-83
RENESAS Code
PRSS0004AE-B
2.49 ± 0.2
11.0 ± 0.5
0.2
0.86 +– 0.1
Package Name
LDPAK(S)-(1)
Unit: mm
10.2 ± 0.3
8.6 ± 0.3
11.3 ± 0.5
0.3
10.0 +– 0.5
Previous Code
LDPAK(L) / LDPAK(L)V
Previous Code
LDPAK(S)-(1) / LDPAK(S)-(1)V
0.4 ± 0.1
MASS[Typ.]
1.30g
(1.5)
10.0
Rev.6.00 Oct 16, 2006 page 7 of 8
2.54 ± 0.5
0.4 ± 0.1
0.3
3.0 +– 0.5
2.54 ± 0.5
0.2
0.86 +– 0.1
7.8
7.0
2.49 ± 0.2
0.2
0.1 +– 0.1
1.37 ± 0.2
1.3 ± 0.2
7.8
6.6
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
JEITA Package Code

(1.4)
Package Name
LDPAK(L)
2.2
H7N0602LD, H7N0602LS, H7N0602LM
JEITA Package Code

RENESAS Code
PRSS0004AE-C
Previous Code
LDPAK(S)-(2) / LDPAK(S)-(2)V
MASS[Typ.]
1.35g
7.8
6.6
(2.3)
10.0
2.49 ± 0.2
0.2
0.1 +– 0.1
7.8
7.0
1.3 ± 0.15
+ 0.3
– 0.5
8.6 ± 0.3
(1.5)
(1.4)
4.44 ± 0.2
10.2 ± 0.3
Unit: mm
1.7
Package Name
LDPAK(S)-(2)
2.2
1.37 ± 0.2
2.54 ± 0.5
0.2
0.86 +– 0.1
2.54 ± 0.5
0.4 ± 0.1
0.3
5.0 +– 0.5
1.3 ± 0.2
Ordering Information
Part Name
H7N0602LD-E
H7N0602LSTL-E
H7N0602LMTL-E
Quantity
500 pcs
1000 pcs
1000 pcs
Shipping Container
Box (Conductive Sack)
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.6.00 Oct 16, 2006 page 8 of 8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Colophon .7.0
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