MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted µ Symbol Parameter Value Units V VCEO Collector-Emitter Voltage 45 VCBO Collector-Base Voltage 45 V VEBO Emitter-Base Voltage 6.5 V IC Collector Current - Continuous 100 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient 1997 Fairchild Semiconductor Corporation Max Units MPSA18 625 5.0 83.3 mW mW/°C °C/W 200 °C/W MPSA18 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 10 mA, IB = 0 45 V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, I E = 0 45 V V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.5 V I CBO Collector Cutoff Current VCB = 30 V, IE = 0 50 nA 1500 0.2 0.3 0.7 V V V pF ON CHARACTERISTICS* hFE DC Current Gain VCE(sat ) Collector-Emitter Saturation Voltage VBE(on) Base-Emitter On Voltage VCE = 5.0 V, IC = 10 µA VCE = 5.0 V, IC = 100 µA VCE = 5.0 V, IC = 1.0 mA VCE = 5.0 V, IC = 10 mA I C = 10 mA, I B = 0.5 mA I C = 50 mA, I B = 5.0 mA VCE = 5.0 V, IC = 1.0 mA 400 500 500 500 SMALL SIGNAL CHARACTERISTICS Ccb Collector-Base Capacitance VCB = 5.0 V, f = 1.0 MHz 3.0 Ceb Emitter-Base Capacitance VEB = 0.5 V, f = 1.0 MHz 6.5 fT Current Gain - Bandwidth Product NF Noise Figure IC = 1.0 mA, VCE = 5.0 V, f = 100 MHz VCE = 5.0 V, I C = 100 µA, RS = 10 kΩ, f = 1.0 kHz, *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% 100 pF MHz 1.5 dB MPSA18 NPN General Purpose Amplifier