Vishay BYQ28E Dual ultrafast soft recovery rectifier Datasheet

BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Dual Ultrafast Soft Recovery Rectifier
Reverse Voltage 100 to 200V Forward Current 10A
Reverse Recovery Time 20ns
ITO-220AB (BYQ28EF, UGF10 Series)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AB (BYQ28E, UG10 Series)
0.185 (4.70)
0.415 (10.54) MAX.
0.154 (3.91)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.145 (3.68)
0.135 (3.43)
0.410 (10.41)
0.390 (9.91)
1
PIN
2
3
3
2
1
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.350 (8.89)
0.330 (8.38)
PIN
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
0.131 (3.39)
DIA.
0.122 (3.08)
0.140 (3.56)
DIA.
0.130 (3.30)
0.175 (4.44)
0.110 (2.80)
0.100 (2.54)
0.060 (1.52)
PIN 1
0.110 (2.79)
0.100 (2.54)
PIN 2
PIN 3
PIN 1
PIN 2
0.560 (14.22)
0.530 (13.46)
CASE
PIN 3
0.037 (0.94)
0.027 (0.69)
0.105 (2.67)
0.095 (2.41)
0.105 (2.67)
0.035 (0.90)
0.028 (0.70)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
TO-263AB (BYQ28EB, UGB10 Series)
Mounting Pad Layout TO-263AB
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
0.245 (6.22)
MIN
0.42
(10.66)
K
0.33
(8.38)
Dimensions in inches
and (millimeters)
0.055 (1.40)
0.360 (9.14)
0.047 (1.19)
0.320 (8.13)
0.63
(17.02)
0.624 (15.85)
1
K
2
0.591 (15.00)
0-0.01 (0-0.254)
0.110 (2.79)
0.090 (2.29)
0.037 (0.940)
0.08
(2.032)
0.027 (0.686)
0.24
(6.096)
0.12
(3.05)
0.105 (2.67)
0.095 (2.41)
0.021 (0.53)
PIN 1
0.014 (0.36)
PIN 2
K - HEATSINK
0.140 (3.56)
0.110 (2.79)
0.205 (5.20)
0.195 (4.95)
Features
Mechanical Data
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High reverse energy capability
• Excellent high temperature switching
• High temperature soldering guaranteed: 250°C/10
seconds at terminals
• Glass passivated chip junction
• Soft recovery characteristics
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB
molded plastic body
Document Number 88549
03-Jul-02
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
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BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings
UG10BCT
(TC = 25°C unless otherwise noted)
Parameter
Symbol
UG10CCT
UG10DCT
BYQ28E-100 BYQ28E-150 BYQ28E-200
Unit
Maximum repetitive peak reverse voltage
VRRM
100
150
200
V
Working peak reverse voltage
VRWM
100
150
200
V
Maximum DC blocking voltage
VDC
100
150
200
V
Maximum average forward rectified current Total device
at TC = 100°C
Per leg
IF(AV)
10
5
A
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) per leg
IFSM
55
A
Repetitive peak reverse current per leg at tp = 100µs
IRRM
0.2
A
VC
8
KV
TJ, TSTG
–40 to +150
°C
IRSM
0.2
A
VISOL
4500 (NOTE 1)
3500 (NOTE 2)
1500 (NOTE 3)
V
Symbol
Value
Unit
VF
1.25
1.10
0.895
V
IR
10
200
µA
Maximum reverse recovery time per leg at
IF = 1.0A, di/dt = 100A/µs, VR = 30V, Irr = 0.1 IRM
trr
25
ns
Maximum reverse recovery time per leg at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
20
ns
Maximum stored charge per leg
IF = 2A, di/dt = 20A/µs, VR = 30V, Irr = 0.1 IRM
Qrr
9
nC
Electrostatic discharge capacitor voltage,
Human body model: C = 250pF, R = 1.5kΩ
Operating junction and storage temperature range
Non-repetitive peak reverse current per leg
at tp= 100µs
RMS Isolation voltage (BYQ28EF, UGF types)
from terminals to heatsink with t = 1 second, RH ≤ 30%
Electrical Characteristics (T
C
= 25°C unless otherwise noted)
Parameter
Maximum instantaneous forward voltage
at IF = 10A,
at IF = 5A,
at IF = 5A,
Maximum reverse current per leg
at working peak reverse voltage (Note 4)
per leg (Note 4)
TJ = 25°C
TJ = 25°C
TJ = 150°C
TJ = 25°C
TJ = 100°C
Thermal Characteristics (T
C
UG10
UGF10
UGB10
Symbol
BYQ28E
BYQ28EF
BYQ28EB
Unit
RΘJA
RΘJC
50
4.5
55
6.7
50
4.5
°C/W
°C/W
= 25°C unless otherwise noted)
Parameter
Typical thermal resistance — junction to ambient
— junction to case
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
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Document Number 88549
03-Jul-02
BYQ28E, BYQ28EF, BYQ28EB, UG10DCT, UGF10DCT, UGB10DCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Forward Current Derating Curve
15
100
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
10
5
0
TC = 105°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
10
1
50
0
150
100
1
Typical Reverse Characteristics Per Leg
100
IR – Instantaneous Reverse Current (mA)
IF – Instantaneous Forward Current (A)
Typical Instantaneous
Forward Characteristics Per Leg
Pulse Width = 300µs
1% Duty Cycle
10
TJ = 125°C
TJ = 100°C
1.0
TJ = 25°C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1000
TJ = 125°C
100
100°C
10
1.0
25°C
0.1
20
1.4
Reverse Switching
Characteristics Per Leg
60
80
100
Typical Junction Capacitance Per Leg
50
100
@2A, 20A/µs
40
pF – Junction Capacitance
Stored Charge/Reverse Recovery Time
(nC/ns)
40
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Forward Voltage (V)
@5A, 50A/µs
30
@1A, 100A/µs
20
@5A, 50A/µs
@1A, 100A/µs
10
25
50
75
100
Junction Temperature (°C)
Document Number 88549
03-Jul-02
TJ = 125°C
f = 1.0 MHZ
Vsig = 50mVp-p
10
trr
Qrr
@2A, 20A/µs
0
100
10
Number of Cycles at 60 HZ
Case Temperature (°C)
125
1
0.1
1
10
100
Reverse Voltage (V)
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