TSC MBS8 0.8a, 200v - 1000v glass passivated bridge rectifier Datasheet

MBS2 - MBS10
Taiwan Semiconductor
CREAT BY ART
0.8A, 200V - 1000V Glass Passivated Bridge Rectifiers
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MBS
MECHANICAL DATA
Case: Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: Polarity as marked on the body
Weight: 0.12 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
MBS2
MBS4
MBS6
MBS8
MBS10
Unit
Maximum repetitive peak reverse voltage
VRRM
200
400
600
800
1000
V
Maximum RMS voltage
VRMS
140
280
420
560
700
V
Maximum DC blocking voltage
VDC
200
400
600
800
1000
V
Maximum average forward rectified current
On glass-epoxy P.C.B.
On aluminum substrate
IF(AV)
0.5
0.8
A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
35
A
VF
1.0
V
IR
5
100
μA
Maximum instantaneous forward voltage (Note 1)
IF= 0.4 A
Maximum DC reverse current
at rated DC blocking voltage
TJ=25 °C
TJ=125 °C
Rating for fusing (t<8.3ms)
Typical junction capacitance per leg (Note 2)
(Note 3)
Typical thermal resistance (Note 4)
(Note 3)
Operating junction temperature range
Storage temperature range
I2t
CJ
5.08
A2s
pF
RθJL
RθJA
RθJA
20
70
85
°C/W
TJ
- 55 to +150
°C
TSTG
- 55 to +150
°C
13
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
Note 2: Measure at 1.0MHz and Applied Reverse Voltage of 4.0 Volts D.C.
Note 3: On glass epoxy P.C.B. mounted on 0.05" x 0.05" (1.3mm x 1.3mm) pads
Note 4: On aluminum substrate P.C.B. with an area of 0.8" x 0.8" (20mm x 20mm) mounted on 0.05" x 0.05" (1.3mm x 1.3mm) solder pads
Document Number: DS_D1410054
Version: O15
MBS2 - MBS10
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
PART NO.
PACKING
PACKING CODE
SUFFIX
CODE
SUFFIX
H
RC
G
MBSx
(Note 1, 2)
PACKAGE
PACKING
MBS
3,000 / 13" Paper reel
Note 1: "x" defines voltage from 200V (MBS2) to 1000V (MBS10)
Note 2: Whole series with green compound
EXAMPLE
PREFERRED
PART NO.
PART NO.
PART NO.
SUFFIX
MBS10
MBS10HRCG
PACKING CODE
PACKING CODE
H
DESCRIPTION
SUFFIX
RC
AEC-Q101 qualified
Green compound
G
RATINGS AND CHARACTERISTICS CURVES
(TA=25°C unless otherwise noted)
FIG.1 MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
PER LEG
RESISTIVE OR INDUCTIVE LOAD
WITH HEATSINK
0.8
INSTANTANEOUS REVERSE CURRENT (μA)
AVERAGE FORWARD CURRENT (A)
1
Aluminum Substrate
0.6
0.4
0.2
Glass Epoxy P.C.B.
0
0
20
40
60
80
100
120
140
100
10
TJ=125°C
1
0.1
TJ=25°C
0.01
0
160
20
AMBIENT TEMPERATURE (oC)
60
80
100
PERCENT OF RATED PEAK REVERSE VOLYAGE(%)
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT PER LEG
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
PER LEG
35
10
Single Half Sine-Wave
30
INSTANTANEOUS FORWARD A
CURRENT (A)
PEAK FORWARD SURGE CURRENT (A)
40
25
F=60Hz
20
15
F=50Hz
10
5
0
1
10
NUMBER OF CYCLES AT 60 Hz
Document Number: DS_D1410054
100
1
0.1
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
FORWARD VOLTAGE (V)
Version: O15
MBS2 - MBS10
Taiwan Semiconductor
FIG. 5 TYPICAL JUNCTION CAPACITANCE
PER LEG
30
CAPACITANCE (pF) a
25
20
15
10
f=1.0MHz
Vslg=50mVp-p
5
0
0.1
1
10
100
REVERSE VOLTAGE (V)
PACKAGE OUTLINE DIMENSIONS
MBS
DIM.
Unit (mm)
Unit (inch)
Min
Max
Min
Max
A
4.50
4.90
0.177
0.193
B
0.56
0.84
0.022
0.033
C
3.60
5.00
0.142
0.197
D
-
6.90
-
0.272
E
2.20
2.60
0.087
0.102
F
2.30
2.70
0.091
0.106
G
-
0.20
-
0.008
H
-
2.90
-
0.114
I
0.95
1.53
0.037
0.060
J
0.70
1.10
0.028
0.043
K
0.15
0.35
0.006
0.014
L
1.10
2.12
0.043
0.083
SUGGESTED PAD LAYOUT
Symbol
Unit (mm)
Unit (inch)
A
1.7
0.067
B
0.9
0.035
C
4.4
0.173
D
8.1
0.319
E
1.3
0.051
F
6.3
0.248
MARKING DIAGRAM
P/N
= Specific Device Code
YW
= Date Code
F
= Factory Code
Document Number: DS_D1410054
Version: O15
MBS2 - MBS10
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1410054
Version: O15
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