MOTOROLA MCR310-01 Silicon controlled rectifier Datasheet

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SEMICONDUCTOR TECHNICAL DATA
Reverse Blocking Triode Thyristors
. . . designed for industrial and consumer applications such as temperature, light and
speed control; process and remote controls; warning systems; capacitive discharge
circuits and MPU interface.
• Center Gate Geometry for Uniform Current Density
• All Diffused and Glass-Passivated Junctions for Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat
Dissipation and Durability
• Low Trigger Currents, 200 µA Maximum for Direct Driving from Integrated Circuits
SCRs
10 AMPERES RMS
50 thru 800 VOLTS
G
C
A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)
Rating
Symbol
Peak Repetitive Forward and Reverse Blocking
Voltage(1)
(TJ = –40 to 110°C)
(1/2 Sine Wave, RGK = 1 kΩ)
MCR310-2
MCR310-3
MCR310-4
MCR310-6
MCR310-8
MCR310-10
VDRM
or
VRRM
On-State RMS Current (TC = 75°C)
Value
Unit
Volts
50
100
200
400
600
800
K
A
G
IT(RMS)
10
Amps
ITSM
100
Amps
I2t
40
A2s
VGM
±5
Volts
IGM
1
Amp
PGM
5
Watts
PG(AV)
0.75
Watt
TJ
–40 to +110
°C
Tstg
–40 to +150
°C
–
8
in.-lb.
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
2.2
°C/W
Thermal Resistance, Junction to Ambient
RθJA
60
°C/W
Peak Non-repetitive Surge Current
(1/2 Cycle, 60 Hz, TJ = –40 to 110°C)
Circuit Fusing (t = 8.3 ms)
p 10 µs)
Peak Gate Current (t p 10 µs)
Peak Gate Power (t p 10 µs)
Peak Gate Voltage (t
Average Gate Power
Operating Junction Temperature Range
Storage Temperature Range
Mounting Torque
CASE 221A-04
(TO-220AB)
STYLE 3
THERMAL CHARACTERISTICS
Characteristic
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or
negative gate voltage; however, positive gate voltage shall not be applied concurrent with
negative potential on the anode. Blocking voltages shall not be tested with a constant current
source such that the voltage ratings of the devices are exceeded.
Motorola Thyristor Device Data
 Motorola, Inc. 1995
1
ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1 kΩ unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
TC = 110°C
TC = 25°C
IDRM
—
—
—
—
500
10
µA
µA
TC = 110°C
TC = 25°C
IRRM
—
—
—
—
500
10
µA
µA
VTM
—
1.7
2.2
Volts
Gate Trigger Current, Continuous dc(2)
(VD = 12 V, RL = 100 Ω)
IGT
—
30
200
µA
Gate Trigger Voltage, Continuous dc
(VD = 12 V, RL = 100 Ω)
(VD = Rated VDRM, RL = 10 kΩ, TJ = 110°C)
VGT
—
0.1
0.5
—
1.5
—
IH
—
—
6
mA
dv/dt
—
10
—
V/µs
tgt
—
1
—
µs
Peak Forward Blocking Current(1)
(TJ = 110°C, VD = Rated VDRM)
Peak Reverse Blocking Current(1)
(TJ = 110°C, VR = Rated VRRM)
On-State Voltage
(ITM = 20 A Peak, Pulse Width
p 1 ms, Duty Cycle p 2%)
Holding Current
(VD = 12 V, ITM = 100 mA)
Critical Rate of Rise of Forward Blocking Voltage
(VD = Rated VDRM, TJ = 110°C, Exponential Waveform)
Gate Controlled Turn-On Time
(VD = Rated VDRM, ITM = 20 A, IG = 2 mA)
Volts
PAV , AVERAGE POWER DISSIPATION (WATTS)
TC , MAXIMUM CASE TEMPERATURE (° C)
1. Ratings apply for negative gate voltage or RGK = 1 kΩ. Devices shall not have a positive gate voltage concurrently with a negative voltage
on the anode. Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage
applied exceeds the rated blocking voltage.
2. Does not include RGK current.
120
110
α
α = CONDUCTION ANGLE
100
α = 30°
90
60°
90°
180°
80
dc
70
8
4
6
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
0
2
20
dc
16
α
α = CONDUCTION ANGLE
12
180°
90°
α = 30° 60°
8
4
0
0
10
Figure 1. Average Current Derating
2
4
6
8
IT(AV), AVERAGE ON-STATE CURRENT (AMPS)
10
Figure 2. On-State Power Dissipation
VGT , GATE TRIGGER VOLTAGE (VOLTS)
NORMALIZED GATE CURRENT
3
2
VD = 12 Vdc
1
0.5
0.3
–40
–20
0
20
40
60
80
90
100
TJ, JUNCTION TEMPERATURE (°C)
Figure 3. Normalized Gate Current
2
120
140
0.7
VD = 12 Vdc
0.6
0.5
0.4
0.3
0.2
0.1
–60
–40
–20
0
20
40
60
80 100
TJ, JUNCTION TEMPERATURE (°C)
120
Figure 4. Gate Voltage
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
B
F
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
4
Q
A
1 2 3
STYLE 3:
PIN 1.
2.
3.
4.
U
H
K
Z
R
L
V
J
G
D
N
CATHODE
ANODE
GATE
ANODE
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.405
0.160
0.190
0.025
0.035
0.142
0.147
0.095
0.105
0.110
0.155
0.014
0.022
0.500
0.562
0.045
0.055
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
–––
–––
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.28
4.07
4.82
0.64
0.88
3.61
3.73
2.42
2.66
2.80
3.93
0.36
0.55
12.70
14.27
1.15
1.39
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
–––
–––
2.04
CASE 221A-04
(TO–220AB)
Motorola Thyristor Device Data
3
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4
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Motorola Thyristor Device Data
*MCR310/D*
MCR310/D
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