DMN601DMK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = 25°C 2.4Ω @ VGS = 10V 510mA 4.0Ω @ VGS = 4V 390mA V(BR)DSS • • • • • • • • • 60V Description and Applications • • This new generation MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 2kV Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data • • • DC-DC Converters Power management functions Analog Switch • Case: SOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (approximate) Drain SOT26 D2 G1 S1 S2 G2 D1 Body Diode Gate Gate Protection Diode Source Top View Internal Schematic Equivalent Circuit Per Element Top View ESD PROTECTED TO 2kV Ordering Information (Note 3) Part Number DMN601DMK-7 Notes: Case SOT26 Packaging 3000/Tape & Reel 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information K7K = Marking Code YM = Date Code Marking Y = Year (ex: S = 2005) M = Month (ex: 9 = September) K7K YM K7K YM NEW PRODUCT Features and Benefits Date Code Key Year 2005 Code S Month Code Jan 1 2006 T Feb 2 DMN601DMK Document number: DS30657 Rev. 5 - 2 2007 U Mar 3 2008 V Apr 4 2009 W 2010 X May 5 2011 Y Jun 6 1 of 5 www.diodes.com 2012 Z Jul 7 2013 A Aug 8 2014 B Sep 9 2015 C Oct O 2016 D Nov N 2017 E Dec D November 2011 © Diodes Incorporated DMN601DMK Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State t<10s Continuous Drain Current (Note 5) VGS = 4V Steady State t<10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C ID Value 60 ±20 510 400 ID 580 470 mA ID 390 300 mA mA 440 340 850 1.2 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current Units V V IDM IS mA mA A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 4) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 4) RθJA Total Power Dissipation (Note 5) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range RθJA RθJC TJ, TSTG Value 0.7 157 121 0.98 113 88 26 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±10 V μA μA VGS = 0V, ID = 10μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 1.6 2.5 V 2.4 4.0 Ω ⎯ 1.4 ms V VDS = 10V, ID = 1mA VGS = 10V, ID = 200mA VGS = 4V, ID = 200mA VDS =10V, ID = 200mA VGS = 0V, IS = 115mA 50 25 5.0 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ pF pF pF Ω RDS (ON) ⎯ |Yfs| VSD 100 0.5 ⎯ ⎯ ⎯ ⎯ Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 30 5 3 133 304 84 203 3.9 3.4 15.7 9.9 Test Condition VDS = 25V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz nC VGS = 4.5V, VDS = 10V, ID = 250mA ns VDS = 30V, ID = 0.2A, VGS = 10V, RG = 25Ω, RL = 150Ω 4. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 6. Short duration pulse test used to minimize self-heating effect 7. Guaranteed by design. Not subject to production testing DMN601DMK Document number: DS30657 Rev. 5 - 2 2 of 5 www.diodes.com November 2011 © Diodes Incorporated ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 10 VDS = 10V ID = 1mA RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 Pulsed 1.5 1 0.5 0 -50 -25 25 50 75 100 125 0 Tch , CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature 1 0.1 150 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance vs. Drain Current RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) 10 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT DMN601DMK 0 1 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN601DMK Document number: DS30657 Rev. 5 - 2 3 of 5 www.diodes.com November 2011 © Diodes Incorporated IDR, REVERSE DRAIN CURRENT (A) RDS(ON), STATIC DRAIN-SOURCE ON-STATE RESISTANCE (Ω) 0 |Yfs|, FORWARD TRANSFER ADMITTANCE (S) TCH, CHANNEL TEMPERATURE (°C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature IDR, REVERSE DRAIN CURRENT (A) NEW PRODUCT DMN601DMK 1 1 ID, DRAIN CURRENT (A) Fig.10 Forward Transfer Admittance vs. Drain Current Package Outline Dimensions A B C H K J DMN601DMK Document number: DS30657 Rev. 5 - 2 M D L 4 of 5 www.diodes.com SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm November 2011 © Diodes Incorporated DMN601DMK Suggested Pad Layout NEW PRODUCT C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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