ISOCOM ISP321-4 High density mounting phototransistor optically coupled isolator Datasheet

ISP321-1X, ISP321-2X, ISP321-4X
ISP321-1, ISP321-2, ISP321-4
HIGH DENSITY MOUNTING
PHOTOTRANSISTOR
OPTICALLY COUPLED ISOLATORS
APPROVALS
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UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
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VDE 0884 in 3 available lead form : - STD
- G form
- SMD approved to CECC 00802
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Certified to EN60950 by the following
Test Bodies :Nemko - Certificate No. P01102465
Fimko - Certificate No. FI18162
Semko - Reference No. 0202041/01-25
Demko - Certificate No. 311161-01
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BSI approved - Certificate No. 8001
DESCRIPTION
The ISP321-1 , ISP321-2 , ISP321-4 series of
optically coupled isolators consist of infrared
light emitting diodes and NPN silicon photo
transistors in space efficient dual in line plastic
packages.
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio ( 50% min)
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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High BVCEO ( 80Vmin )
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All electrical parameters 100% tested
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Custom electrical selections available
APPLICATIONS
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Computer terminals
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Industrial systems controllers
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Measuring instruments
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Signal transmission between systems of
different potentials and impedances
OPTION SM
ISP321-1X
ISP321-1
Dimensions in mm
2.54
1
2
7.0
6.0
1.2
5.08
4.08
7.62
4.0
3.0
13°
Max
0.5
3.0
ISP321-2X
ISP321-2
0.5
0.26
3.35
2.54
7.0
6.0
8
2
3
7
1.25
0.75
1.2
10.16
9.16
7.62
4.0
3.0
13°
Max
0.5
3.0
0.26
3.35
0.5
1
ISP321-4X
ISP321-4
16
15
14
2
3
4
2.54
13
5
7.0
6.0
7.62
1.2
12
6
11
7
8
10
9
7.62
4.0
3.0
13°
Max
0.5
0.26
10.16
6
5
4
20.32
19.32
10.46
9.86
1
OPTION G
SURFACE MOUNT
0.6
0.1
4
3
3.0
0.5 3.35
0.26
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail [email protected]
http://www.isocom.com
24/3/03
DB91075m-AAS/A3
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 125°C
Operating Temperature
-30°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
50mA
6V
70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Power Dissipation
80V
6V
150mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted )
Input
PARAMETER
MIN TYP MAX UNITS
Forward Voltage (VF)
1.0
1.15
Reverse Current (IR)
Output
Coupled
Collector-emitter Breakdown (BVCEO)
80
( Note 2 )
Emitter-collector Breakdown (BVECO)
6
Collector-emitter Dark Current (ICEO)
Current Transfer Ratio (CTR) (Note 2)
ISP321-1, ISP321-2, ISP321-4
CTR selection available
GB
BL
GB
Collector-emitter Saturation VoltageVCE (SAT)
GB
Input to Output Isolation Voltage VISO
50
100
200
30
Input-output Isolation Resistance RISO 5x1010
Response Time (Rise, tr)
4
Response Time (Fall, tf)
3
Note 1
Note 2
24/3/03
1.3
V
IF = 10mA
10
µA
VR = 4V
V
IC = 0.5mA
V
nA
IE = 100µA
VCE = 48V
%
%
%
%
V
V
VRMS
VPK
5mA IF , 5V VCE
Ω
µs
µs
VIO = 500V (note 1)
VCE = 2V ,
IC = 2mA, RL = 100Ω
100
600
600
600
0.4
0.4
5300
7500
TEST CONDITION
1mA IF , 0.4V VCE
8mA IF , 2.4mA IC
1mA IF , 0.2mA IC
See note 1
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB91075m-AAS/A3
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Low
Collector-emitter Voltage
TA = 25°C
25
Collector current IC (mA)
Collector power dissipation PC (mW)
200
150
100
50
0
15
50
40
30
20
10
10
5
20
5
IF = 2mA
0
-30
0
25
50
75
100
0
125
Ambient temperature TA ( °C )
0.2
50
50
1.0
TA = 25°C
30
Collector current IC (mA)
50
Forward current IF (mA)
0.8
Collector Current vs. Collector-emitter Voltage
60
40
30
20
10
0
20
40
15
30
10
20
10
IF = 5mA
0
-30
0
25
50
75
100
125
0
Ambient temperature TA ( °C )
2
4
6
8
10
Collector-emitter voltage VCE ( V )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Current Transfer Ratio vs. Forward Current
320
0.28
0.24
Current transfer ratio CTR (%)
Collector-emitter saturation voltage VCE(SAT) (V)
0.6
Collector-emitter voltage VCE ( V )
Forward Current vs. Ambient Temperature
IF = 5mA
IC = 1mA
0.20
0.16
0.12
0.08
0.04
280
240
200
160
120
80
VCE = 5V
TA = 25°C
40
0
0
-30
0
25
50
75
Ambient temperature TA ( °C )
24/3/03
0.4
100
1
2
5
10
20
50
Forward current IF (mA)
DB91075m-AAS/A3
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