Fairchild NDB6051 N-channel enhancement mode field effect transistor Datasheet

May 1996
NDP6051 / NDB6051
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
48 A, 50 V. RDS(ON) = 0.022 Ω @ VGS= 10 V.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
______________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise noted
Symbol
Parameter
NDP6051
VDSS
Drain-Source Voltage
50
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
50
V
VGSS
Gate-Source Voltage - Continuous
± 20
V
- Nonrepetitive (tP < 50 µs)
ID
Drain Current
NDB6051
± 40
- Continuous
48
- Pulsed
144
PD
Total Power Dissipation @ TC = 25°C
TJ,TSTG
Operating and Storage Temperature Range
TL
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Derate above 25°C
© 1997 Fairchild Semiconductor Corporation
Units
A
100
W
0.67
W/°C
-65 to 175
°C
275
°C
NDP6051 Rev. C1
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
300
mJ
48
A
250
µA
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
IAR
Maximum Drain-Source Avalanche Current
VDD = 25 V, ID = 48 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 50 V, VGS = 0 V
50
V
1
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
V
TJ = 125°C
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
2
2.8
4
1.4
2.2
3.6
0.018
0.022
0.03
0.04
VGS = 10 V, ID = 24 A
TJ = 125°C
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V, ID = 24 A
60
Ω
A
14
S
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1220
pF
520
pF
190
pF
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
VDD = 30 V, ID = 48 A,
VGS = 10 V, RGEN = 7.5 Ω
10
20
nS
132
250
nS
Turn - Off Delay Time
28
55
nS
tf
Turn - Off Fall Time
80
150
nS
Qg
Total Gate Charge
37
53
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 24 V,
ID = 48 A, VGS = 10V
8
22
NDP6051 Rev. C1
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
48
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
144
A
VSD
Drain-Source Diode Forward Voltage
0.9
1.3
V
0.8
1.2
VGS = 0 V, IS = 24 A (Note 1)
TJ = 125°C
trr
Reverse Recovery Time
Irr
Reverse Recovery Current
VGS = 0 V, IF = 48 A,
dIF/dt = 100 A/µs
35
140
ns
2
8
A
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
1.5
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP6051 Rev. C1
Typical Electrical Characteristics
VGS = 12V
2.5
10
9.0
80
60
R DS(on) , NORMALIZED
8.0
7.0
40
6.0
20
I
D
5.0
0
0
1
V
DS
2
3
4
, DRAIN-SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
, DRAIN-SOURCE CURRENT (A)
100
2
7.0
1.5
8.0
10
D
40
60
, DRAIN CURRENT (A)
80
100
2.5
I D = 24A
R DS(on) , NORMALIZED
V GS = 10V
1.5
1.25
1
0.75
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
150
DRAIN-SOURCE ON-RESISTANCE
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
2
TJ = 125°C
1.75
1.5
1.25
25°C
1
-55°C
0.75
0.5
175
VGS = 10V
2.25
0
20
40
60
ID , DRAIN CURRENT (A)
J
80
100
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
Figure 3. On-Resistance Variation
with Temperature.
1.2
T = -55°C
J
V DS = 10V
50
25°C
V GS(th), NORMALIZED
125°C
40
30
20
10
0
2
4
6
8
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10
GATE-SOURCE THRESHOLD VOLTAGE
60
I D , DRAIN CURRENT (A)
12
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
2
0.5
-50
0
I
Figure 1. On-Region Characteristics.
1.75
9.0
1
0.5
5
VGS = 6.0V
V DS = V GS
I D = 250µA
1.1
1
0.9
0.8
0.7
0.6
0.5
-50
-25
0
25
50
75
100
125
T , JUNCTION TEMPERATURE (°C)
150
175
J
Figure 6. Gate Threshold Variation With
Temperature.
NDP6051 Rev. C1
Typical Electrical Characteristics (continued)
50
20
I D = 250µA
I , REVERSE DRAIN CURRENT (A)
1.1
1.05
1
0.95
V GS = 0V
5
2
1
TJ = 125°C
25°C
0.1
-55°C
0.01
0.001
S
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.15
0.9
-50
-25
0
T
J
25
50
75
100
125
, JUNCTION TEMPERATURE (°C)
150
175
0.0001
0.2
0.4
0.6
0.8
1
1.2
V , BODY DIODE FORWARD VOLTAGE (V)
1.4
SD
Figure 7. Breakdown Voltage Variation with
Temperature.
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
20
CAPACITANCE (pF)
2000
V GS, GATE-SOURCE VOLTAGE (V)
3000
Ciss
VDS = 12V
24V
48V
I D = 48A
15
1000
Coss
10
500
Crss
300
f = 1 MHz
V GS = 0V
200
100
1
2
V
DS
3
5
10
20
, DRAIN TO SOURCE VOLTAGE (V)
30
5
0
50
0
20
40
Q g , GATE CHARGE (nC)
60
80
Figure 10. Gate Charge Characteristics.
Figure 9. Capacitance Characteristics.
VDD
t on
RL
V IN
t d(on)
VGS
R GEN
DUT
G
tr
V OUT
D
t off
t d(off)
tf
90%
90%
VOUT
10%
10%
INVERTED
90%
S
V IN
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP6051 Rev. C1
Typical Electrical Characteristics (continued)
300
gFS, TRANSCONDUCTANCE (SIEMENS)
30
TJ = -55°C
V DS=10V
100
I D , DRAIN CURRENT (A)
24
25°C
18
125°C
12
6
R
(O
DS
N)
Lim
it
100
50
µs
1ms
20
10m
10
100
VGS = 10V
SINGLE PULSE
o
RθJC = 1.5 C/W
T C = 25°C
5
2
DC
s
ms
1
0
0.5
0
10
20
I D, DRAIN CURRENT (A)
30
40
Figure 13. Transconductance Variation with Drain
Current and Temperature.
1
2
3
5
10
20
30
VDS , DRAIN-SOURCE VOLTAGE (V))
50
70
Figure 14. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.5
0.3
R θJC (t) = r(t) * RθJC
R
θJC = 1.5 °C/W
0.2
0.2
0.1
0.1
P(pk)
0.05
0.05
0.03
t1
0.02
0.01
0.02
0.01
0.01
0.02
0.05
t2
TJ - T C = P * R θ
JC (t)
Duty Cycle, D = t 1 /t2
Single Pulse
0.1
0.2
0.5
1
2
5
t1 ,TIME (m s)
10
20
50
100
200
500
1000
Figure 15. Transient Thermal Response Curve.
NDP6051 Rev. C1
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