Weitron MMBT5089 Low noise npn transistor surface mount Datasheet

MMBT5088
MMBT5089
Low Noise NPN Transistor
Surface Mount
COLLECTOR
3
3
1
1
BASE
P b Lead(Pb)-Free
2
SOT-23
2
EMITTER
Maximum Ratings
Rating
Collector-Emitter Voltage
Collector-B as e Voltage
E m itter-B as e Voltage
Collector Current-Continuous
Symbol
V CE O
V CB O
VE B O
IC
5088LT1
30
35
5089LT1
25
30
Unit
Vdc
Vdc
Vdc
m Adc
4.5
50
Thermal Characteristics
Characteristics
Total Device Dis s ipation FR -5 B oard (1 )
T A=2 5 C
Derate above 2 5 C
Ther m al Res is tance, J unction to Am bient
Total Device Dis s ipation
Alum ina S ubs trate, (2 ) T A=2 5 C
Derate above 2 5 C
Ther m al Res is tance, J unction to Am bient
J unction and S torage, Tem perature
Symbol
Max
Unit
PD
225
1.8
R JA
556
PD
300
2.4
R JA
417
m W/ C
C/ W
T J, Ts tg
-5 5 to +1 5 0
C
mW
m W/ C
C/ W
mW
Device Marking
MMBT5088=1Q ; MMBT5089=1R
Electrical Characteristics (TA=25ºC Unless Otherwise noted)
Characteristics
Symbol
Min
Max
Unit
V (B R )CE O
30
25
-
V
Off Characteristics
Collent-Emitter Breakdown Voltage
IC = 1.0mA, IB=0
MMBT5088
IC = 1.0mA, IB=0
MMBT5089
Collent-Base Breakdown Voltage
IC = 100µA, IE=0
IC = 100µA, IE=0
Collent Cutoff Current
VCB = 20V, IE=0
VCB = 15V, IE=0
MMBT5088
MMBT5089
V (B R )CB O
35
30
-
V
MMBT5088
MMBT5089
I CB O
-
50
50
nA
Emitte Cutoff Current
VEB(off) = 3.0V, IC=0
VEB(off) = 4.5V, IC=0
MMBT5088
MMBT5089
IE B O
-
50
100
nA
1. FR-5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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13-Jan-06
MMBT5088
MMBT5089
Electrical Characteristics (TA=25˚C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
hFE(1)
300
400
350
450
300
400
900
1200
-
Unit
On Characteristics
DC Current Gain
VCE = 5.0V, IC = 100µA
VCE= 5.0V, IC= 1.0mA
VCE= 5.0V, IC= 10mA
MMBT5088
MMBT5089
MMBT5088
MMBT5089
MMBT5088
MMBT5089
hFE(2)
hFE(3)
-
Collector-Emitter Saturation Voltage
IC = 100mA, IB = 1.0mA
VCE(sat)
-
0.5
V
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1.0mA
VBE(sat)
-
0.8
V
fT
50
-
MHz
Collector-Base Capacitance
VCB = 5.0V, IE = 0, f = 1.0MHz emitter guarded
Ccb
-
4.0
pF
Emitter-Base Capacitance
VEB = 0.5V, IC = 0, f = 1.0MHz collector guarded
Ceb
-
10
pF
MMBT5088
MMBT5089
hfe
350
450
1400
1800
MMBT5088
MMBT5089
NF
-
3.0
2.0
Small-signal Characteristics
Current-Gain-Bandwidth Product
VCE= 5.0V, IC = 500µA, f=20MHz)
Small-Signal Current Gain
VCE= 5.0V, IC=1.0 mA, f=1.0 kHz
Noise Figure
VCE = 5.0V, IC = 100 µA, RS=1.0k ohms, f=1.0kHz
-
dB
RS
in
~
IDEAL
TRANSISTOR
en
Fig 1.Transistor Noise Model
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MMBT5088
MMBT5089
NOISE CHARACTERISTICS
(V CE = 5.0 Vdc, T A = 25°C)
NOISE VOLTAGE
30
30
20
R S~
~0
I C = 10 mA
3.0mA
10
7.0
e n , NOISE VOLTAGE (nV)
e n , NOISE VOLTAGE (nV)
BANDWIDTH=1.0Hz
1.0mA
5.0
3.0
300µA
10 20
50 100
200 5001.0k
2.0k 5.0k 10k
1.0mA
300µA
0.5
100µA
0.3
0.2
0.1
NF, NOISE FIGURE (dB)
I n , NOISE CURRENT (pA)
3.0mA
1.0
0.7
10µA
R S~
~0
10 20
7.0
10kHz
1.0kHz
5.0
100kHz
0.01 0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
I C=10mA
2.0
100Hz
I C , COLLECTOR CURRENT (mA)
BANDWIDTH=1.0Hz
3.0
f = 10Hz
10
Fig 3. Effects of Collector Current
Fig 2. Effects of Frequency
10
R S~
~0
3.0
20k 50k100k
f, FREQUENCY (Hz)
7.0
5.0
BANDWIDTH=1.0Hz
20
30µA
16
BANDWIDTH=10 Hz to15.7 kHz
12
I C =1.0 mA
500µA
8.0
100µA
10µA
4.0
0
50 100
200 5001.0k
2.0k 5.0k 10k
20k 50k100k
10
20
50
100 200
500
1k
2k
5k
10k 20k
50k 100k
R S , SOURCE RESISTANCE (OHMS)
f, FREQUENCY (Hz)
Fig 5. Wideband Noise Figure
Fig 4. Noise Current
300
200
20
BANDWIDTH=1.0Hz
I
C
=10mA
100µA
100
70
NF, NOISE FIGURE (dB)
V T , TOTAL NOISE VOLTAGE (nV)
100 Hz NOISE DATA
3.0mA
50
1.0mA
30
300µA
20
10
7.0
30µA
10µA
I C = 10mA
16
1.0mA
12
300µA
8.0
100µA
30µA
4.0
5.0
3.0
3.0mA
10µA
BANDWIDTH=1.0Hz
0
10 20
50 100
200 5001.0k
2.0k 5.0k 10k
20k 50k100k
20
50
100 200
500 1.0k 2.0k
5.0k 10k 20k
50k 100k
R S , SOURCE RESISTANCE (OHMS)
R S , SOURCE RESISTANCE (OHMS)
Fig 7. Noise Figure
Fig 6. Total Noise Voltage
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13-Jan-06
h FE, DC CURRENT GAIN (NORMALIZED)
MMBT5088
MMBT5089
4.0
3.0
V
CE
=5.0 V
T A=125°C
2.0
25°C
1.0
–55°C
0.7
0.5
0.4
0.3
0.2
0.01
0.02
0.03
0.05
0.1
0.2
0.3
0.5
1.0
2.0
3.0
5.0
10
I C , COLLECTOR CURRENT (mA)
R θVBE , BASE– EMITTER
TEMPERATURE COEFFICIENT (mV/ °C)
Fig 8. DC Current Gain
1.0
V, VOLTAGE (VOLTS)
T J =25°C
0.8
0.6
V
BE
@V
CE
= 5.0V
0.4
0.2
V
CE(sat)
0
0.01 0.02
@ I C /I B =10
0.05
0.1 0.2
0.5
1.0 2.0
5.0
10
20
50
100
–0.4
–0.8
–1.2
T J=25°C to 125°C
–1.6
–2.0
–55°C to25°C
–0.4
0.01 0.02
0.05
I C , COLLECTOR CURRENT (mA)
C ib
C eb
0.3
C cb
0.2
1.0
0.8
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
f T , CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
C, CAPACITANCE (pF)
T J = 25°C
0.4
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5.0
10
20
50
100
500
300
200
100
V
70
50
CE
= 5.0 V
T J = 25°C
1.0
2.0
5.0
10
20
50
100
I C , COLLECTOR CURRENT (mA)
V R , REVERSE VOLTAGE (VOLTS)
Fig 11. Capacitance
1.0 2.0
Fig 10. Temperature Coefficients
0.8
C ob
0.5
I C , COLLECTOR CURRENT (mA)
Fig 9. “On” Voltages
0.6
0.1 0.2
Fig 12. Current–Gain - Bandwidth Product
4/5
13-Jan-06
MMBT5088
MMBT5089
SOT-23 Package Outline Dimension
SOT-23
Dim
A
B
C
D
E
G
H
J
K
L
M
A
B
TOP VIEW
C
D
E
G
H
K
J
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L
M
5/5
Min
0.35
1.19
2.10
0.85
0.46
1.70
2.70
0.01
0.89
0.30
0.076
Max
0.51
1.40
3.00
1.05
1.00
2.10
3.10
0.13
1.10
0.61
0.25
13-Jan-06
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